发布求助
文献互助 智能选刊 最新文献

2018 13th European Microwave Integrated Circuits Conference (EuMIC)最新文献

筛选
英文 中文
A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate 一种s波段3D表面贴装封装SiGe和GaN Tx模块，采用倒装键合和器件嵌入式PCB基板
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539907
K. Kawasaki, E. Kuwata, Hidenori Ishibashi, T. Yao, Kiyoshi Ishida, Kazuhiro Maeda, H. Shibata, M. Tsuru, K. Mori, M. Shimozawa, H. Fukumoto
{"title":"A S-band 3D Surface Mount Packaged SiGe and GaN Tx Module Using Flip-Chip Bonding and a Device Embedded PCB Substrate","authors":"K. Kawasaki, E. Kuwata, Hidenori Ishibashi, T. Yao, Kiyoshi Ishida, Kazuhiro Maeda, H. Shibata, M. Tsuru, K. Mori, M. Shimozawa, H. Fukumoto","doi":"10.23919/EUMIC.2018.8539907","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539907","url":null,"abstract":"This paper demonstrates a S-band 3D surface mount packaged Si and GaN Tx Module using flip-chip bonding and a chip embedded PCB Substrate. In order to integrate heterogeneous SiGe and GaN chips in a single package, 3D-structure is employed. The GaN chip is embedded in the PCB substrate and the SiGe chip is flip-chip bonded on the GaN embedded PCB Substrate. The Tx module includes a 5bit phase shifter, a 5bit VGA, a driver amplifier, and a power amplifier. The package size is occupying 7×7mm2• The developed Tx module achieves phase and amplitude error of less than 1.3 degrees-rms., and 0.36dB rms., and an output power of30dBm, respectively.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133942525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Single-Ended Branch PA Characterisation for Outphasing Amplifiers 反相放大器的单端支路PA特性
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539963
Paolo Enrico de Falco, K. Mimis, S. B. Smida, Kevin Morris, G. Watkins, A. Yamaoka, K. Yamaguchi
{"title":"Single-Ended Branch PA Characterisation for Outphasing Amplifiers","authors":"Paolo Enrico de Falco, K. Mimis, S. B. Smida, Kevin Morris, G. Watkins, A. Yamaoka, K. Yamaguchi","doi":"10.23919/EUMIC.2018.8539963","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539963","url":null,"abstract":"Back-off efficiency is a key requirement for load modulated power amplifier (PA) architectures such as Chireix outphasing. This paper studies the impact of second and third harmonic impedance tuning (Z2fo,Z3fo) on the performance of a 10 Watt GaN HEMT branch PA subject to outphasing-like load modulation, operating at 900 MHz. Performance variation of up to 3 dB output power (POUT) and 50% points drain efficiency (DE) with phase manipulation alone of Z2fo is recorded. Optimal Z2fo is revealed to vary - throughout a fixed and for different - outphasing trajectories. A simple technique is presented, using continuous class F−1closed form equations, which predicts the intrinsic optimal Z2fo for multiple points from five outphasing load trajectories, de-embedded to the current generator (CG) plane of the device.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133405418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization 基于双功率级阻抗优化的全集成非对称Doherty放大器
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541803
R. Ishikawa, Y. Takayama, K. Honjo
{"title":"Fully Integrated Asymmetric Doherty Amplifier Based on Two-Power-Level Impedance Optimization","authors":"R. Ishikawa, Y. Takayama, K. Honjo","doi":"10.23919/eumc.2018.8541803","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541803","url":null,"abstract":"A fully integrated asymmetric Doherty power amplifier has been developed by using GaN HEMT MMIC technology. To minimize the circuit size, a two-power-level impedance optimization method was applied instead of using a quarter-wavelength transmission line impedance inverter for load modulation in the Doherty amplifier. For this optimization, asymmetric configuration is required to realize optimum impedance conditions. The 4-GHz-band GaN HEMT Doherty amplifier MMIC exhibited a maximum drain efficiency of 56% and a maximum power-added efficiency (PAE) of 53% at 4.3 GHz, with a saturation output power of 36dBm. In addition, PAE of 44% was achieved at 4.2 GHz on a 6-dB output back-off condition.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129313535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Framework for the Generation of Guaranteed Stable Small-Signal Bias-Dependent Behavioral Models 一个保证稳定的小信号偏差依赖行为模型的生成框架
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539900
M. De Stefano, S. Grivet-Talocia, T. Bradde, A. Zanco
{"title":"A Framework for the Generation of Guaranteed Stable Small-Signal Bias-Dependent Behavioral Models","authors":"M. De Stefano, S. Grivet-Talocia, T. Bradde, A. Zanco","doi":"10.23919/EUMIC.2018.8539900","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539900","url":null,"abstract":"We present a numerical scheme for the identification of compact surrogate models of analog circuit blocks. The basic assumption is small signal operation, so that a local linearization can be applied around a given bias point, resulting in a bias-dependent linear state-space behavioral macromodel. The main novel contribution of this work is the ability to embed in the identification process a suitable set of constraints, that are able to guarantee the uniform stability of the model for any bias value within a prescribed design range.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125883390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
European Microwave Week 2018 2018年欧洲微波周
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/eumic.2018.8539912
{"title":"European Microwave Week 2018","authors":"","doi":"10.23919/eumic.2018.8539912","DOIUrl":"https://doi.org/10.23919/eumic.2018.8539912","url":null,"abstract":"","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122270930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pushing the Linearity Limits of a Digital Polar Transmitter 推进数字极极发射机的线性极限
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539964
M. Hashemi, M. Alavi, L. D. de Vreede
{"title":"Pushing the Linearity Limits of a Digital Polar Transmitter","authors":"M. Hashemi, M. Alavi, L. D. de Vreede","doi":"10.23919/EUMIC.2018.8539964","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539964","url":null,"abstract":"The maximum achievable linearity of a digital polar transmitter (DPTX) is mainly constrained by two RF-DAC associated nonidealities; namely, aliasing of sampling spectral replicas (SSR) of the AM and PM signals, and the presence of nonuniform quantization noise. In this work, using DPTX hardware linearization, in combination with PM SSR filtering and iterative learning control (ILC) algorithm improved by look-up tables (LUT), a CMOS DPTX is linearized close to its theoretical ACPR and EVM limits as predicted by its resolution. Using the ILC technique as underlying basis, an effective real-time direct-learning digital predistortion (DPD) technique is proposed. Measurement results show −60/−53 dBc ACPR and −60/−47 dB EVM using the ILC algorithm for 16/64 MHz OFDM signals, and −55/−48 dBc ACPR and −50/−44 dB EVM using the proposed DPD for 16/64 MHz OFDM signals. To the best of author's knowledge, this is the highest linearity reported for a DPTX operating with wideband signals.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124807403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs InGaAs变质hemt和mosfet的射频噪声建模
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539923
F. Heinz, D. Schwantuschke, A. Leuther, A. Tessmann, M. Ohlrogge, R. Quay, O. Ambacher
{"title":"RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs","authors":"F. Heinz, D. Schwantuschke, A. Leuther, A. Tessmann, M. Ohlrogge, R. Quay, O. Ambacher","doi":"10.23919/EUMIC.2018.8539923","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539923","url":null,"abstract":"The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated and compared. A small signal model for InGaAs- metamorphic HEMTs and InGaAs MOSFETs, including an accurate description of the RF-noise, is presented. The model is based on a distributed multiport-network approach, which is scalable in gate width, the number of gate-fingers and covers usual bias points used in amplifier circuits. The noise model is capable of analyzing the sources of noise in InGaAs HEMTs and MOSFETs and their impact on the overall device noise figure. The new extracted MOSFET model is verified on circuit level in the W-Band (75 to 110GHz).","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127968296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology 采用130 nm Sige Bicmos技术的110- 147 GHz频率六倍器
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539939
M. Bao, Z. He, Thanh NgocThi Do, H. Zirath
{"title":"A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology","authors":"M. Bao, Z. He, Thanh NgocThi Do, H. Zirath","doi":"10.23919/EUMIC.2018.8539939","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539939","url":null,"abstract":"The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117221902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Ka-Band P-I-N Diode Based Digital Phase Shifter 基于ka波段P-I-N二极管的数字移相器
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/eumc.2018.8541514
Daniel Kramer
{"title":"Ka-Band P-I-N Diode Based Digital Phase Shifter","authors":"Daniel Kramer","doi":"10.23919/eumc.2018.8541514","DOIUrl":"https://doi.org/10.23919/eumc.2018.8541514","url":null,"abstract":"Phase shifters are an important part of phased array antennas, which the next generation 5G wireless communication networks will rely on. This paper presents 4-bit and 6-bit digital phase shifters with very low loss and high power handling that function from 27.5 to 29.5 GHz, a frequency band being considered for 5G. This is achieved by using a combination of all shunt P-I-N diodes switches and delay lines on the MACOM A1GaAs P-I-N diode process. The chips have integrated bias networks and work well with MACOM's MADR-009443 quad driver.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122828357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications c掺杂AlN/GaN HEMTs与AlN/GaN/AlGaN双异质结构毫米波应用的比较
2018 13th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2018-09-01 DOI: 10.23919/EUMIC.2018.8539962
R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, R. Pecheux, E. Okada, M. Zegaoui, F. Medjdoub
{"title":"Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications","authors":"R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, R. Pecheux, E. Okada, M. Zegaoui, F. Medjdoub","doi":"10.23919/EUMIC.2018.8539962","DOIUrl":"https://doi.org/10.23919/EUMIC.2018.8539962","url":null,"abstract":"We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AIN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT structure shows superior electrical characteristics, with a maximum drain current density Id of 1.5 A/mm, an extrinsic transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmaxof 242 GHz while using a gate length of 120 nm. The C-doped structure delivering high frequency performance together with an excellent electron confinement under high bias enabled to achieve a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) above 52% up to VDs = 25V in pulsed mode.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128341288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书