Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

R. Kabouche, J. Derluyn, R. Pusche, S. Degroote, M. Germain, R. Pecheux, E. Okada, M. Zegaoui, F. Medjdoub
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引用次数: 9

Abstract

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AIN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT structure shows superior electrical characteristics, with a maximum drain current density Id of 1.5 A/mm, an extrinsic transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmaxof 242 GHz while using a gate length of 120 nm. The C-doped structure delivering high frequency performance together with an excellent electron confinement under high bias enabled to achieve a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) above 52% up to VDs = 25V in pulsed mode.
c掺杂AlN/GaN HEMTs与AlN/GaN/AlGaN双异质结构毫米波应用的比较
我们报道了使用两种类型的毫米波应用缓冲层的超薄(低于10 nm势垒厚度)AIN/GaN异质结构的比较:1)碳掺杂GaN高电子迁移率晶体管(HEMTs)和2)双异质结构场效应晶体管(DHFET)。结果表明,当栅极长度为120 nm时,掺杂碳的HEMT结构具有优异的电特性,最大漏极电流密度Id为1.5 a /mm,外部跨导Gm为500 mS/mm,最大振荡频率fmax为242 GHz。在高偏置下,c掺杂结构具有高频率性能和优异的电子约束,能够在脉冲模式下实现40 GHz输出功率密度(POUT = 7 W/mm)和功率附加效率(PAE)高于52%的最先进组合,最高可达VDs = 25V。
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