{"title":"采用130 nm Sige Bicmos技术的110- 147 GHz频率六倍器","authors":"M. Bao, Z. He, Thanh NgocThi Do, H. Zirath","doi":"10.23919/EUMIC.2018.8539939","DOIUrl":null,"url":null,"abstract":"The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology\",\"authors\":\"M. Bao, Z. He, Thanh NgocThi Do, H. Zirath\",\"doi\":\"10.23919/EUMIC.2018.8539939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology
The presented D-band sixtupler consists of a frequency tripler, a frequency doubler, as well as amplifiers. The optimum arrangement for those blocks is investigated. The analysis shows that the tripler should precede the doubler. Furthermore, to extend the bandwidth, an amplifier with an increasing gain versus frequency is applied, to compensate the gain decrease of the tripler. This wideband frequency sixtupler is designed and characterized in a 130 nm SiGe BiCMOS technology. This sixtupler has a bandwidth of 37 GHz (from 110 to 147 GHz), the maximum output power is 4.5 dBm, with a DC power consumption of 310 mW. The maximum power efficiency is 0.9%.
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