发布求助
文献互助 智能选刊 最新文献

2017 75th Annual Device Research Conference (DRC)最新文献

筛选
英文 中文
Edge contacts to multilayer MoS2 using in situ Ar ion beam 利用原位氩离子束与多层二硫化钼的边缘接触
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999454
Zhihui Cheng, Katherine Price, A. Franklin
{"title":"Edge contacts to multilayer MoS2 using in situ Ar ion beam","authors":"Zhihui Cheng, Katherine Price, A. Franklin","doi":"10.1109/DRC.2017.7999454","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999454","url":null,"abstract":"The dimensional scaling of transistors has been a continuous effort for decades. For devices at the sub-5 nm scale, two-dimensional transition metal dichalcogenides, including MoS2, show great promise for preserving electrostatic control and performance. Numerous studies have theoretically [1] and experimentally [2] investigated the effect of short channel and contact lengths on the MoS2 transistor performance. Though it has been recognized that edge contacts could drastically decrease contact resistance and improve performance of MoS2 FETs [1], no experimental work has demonstrated pure edge contacts to this layered semiconductor using in situ etching. In this work, we demonstrate partial and full edge-contacted multilayer MoS2 FETs by using an in situ Ar ion beam.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122453525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
p-Transistors, p-bits and p-circuits for an invertible logic 可逆逻辑的p-晶体管，p-位和p-电路
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999489
Kerem Y Çamsarı
{"title":"p-Transistors, p-bits and p-circuits for an invertible logic","authors":"Kerem Y Çamsarı","doi":"10.1109/DRC.2017.7999489","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999489","url":null,"abstract":"Conventional logic and memory devices are built out of stable, deterministic units such as standard MOS (metal oxide semiconductor) transistors or nanomagnets with energy barriers in excess of ∼ 40–60 kT. In this talk I will show that unstable, stochastic units (“p-bits”, p-for probabilistic) can be interconnected to design “p-circuits” that exhibit large scale, robust correlations to implement precise Boolean functions with impressive accuracy, comparable to standard digital circuits.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123224840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flower-like light distribution inside InGaN-based light-emitting diodes operated in spectral range from violet to red 基于ingan的发光二极管内部的花朵状光分布在从紫色到红色的光谱范围内工作
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999457
Kwanjae Lee, Sang-Kuk Han, Cheul‐Ro Lee, J. S. Kim, Y. Kim
{"title":"Flower-like light distribution inside InGaN-based light-emitting diodes operated in spectral range from violet to red","authors":"Kwanjae Lee, Sang-Kuk Han, Cheul‐Ro Lee, J. S. Kim, Y. Kim","doi":"10.1109/DRC.2017.7999457","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999457","url":null,"abstract":"Nowadays, phosphor-based light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) are commonly used for white light sources [1]. However, degradation of phosphor material during long-term optical pumping is inevitable, resulting that output efficiency and color-rendering index of white LEDs are significantly reduced. Therefore, a phosphor-free white LED realized by directly mixing three primary colors is considered as a good alternative to improve device performances. For the fabrication of phosphor-free white LEDs using InGaN-based QWs, the growth of InGaN emitting in the wavelength above ∼550 nm is currently required. To extend the emission wavelength of InGaN to red spectral range, indium (In) content should be increased. However, it is difficult to grow high-quality InGaN with high In content mainly due to intrinsic phase separation of InN and GaN [2]. In this work, we report device characteristics of yellow-red LEDs, where the active InGaN-based QWs were prepared by a new growth technique. And then, the lateral and vertical light distribution inside the LEDs operated in the spectral range from violet to red will be discussed with theoretical analysis. We also present phosphor-free white LEDs realized by monolithic integration of InGaN-based QWs emitting narrow blue, green, and red spectra.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126435945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of electron beam irradiation on black phosphorus field effect transistor performance 电子束辐照对黑磷场效应晶体管性能的影响
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999487
Natasha Goyal, Naveen Kaushik, Himani Jawa, S. Lodha
{"title":"Effect of electron beam irradiation on black phosphorus field effect transistor performance","authors":"Natasha Goyal, Naveen Kaushik, Himani Jawa, S. Lodha","doi":"10.1109/DRC.2017.7999487","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999487","url":null,"abstract":"Black phosphorous (BP), due to its superior carrier transport properties which promise various transistor applications, has seen significant research interest in recent years. An inherent direct and appreciable band gap along with high mobility values makes it very attractive for optoelectronics and flexible devices. However, interaction between BP and electron beam has not been investigated experimentally. Electron beam is known to induce defects and structural changes in 2D materials, which can deteriorate device quality [5, 4]. Study of the effect of e-beam irradiation on BP devices is extremely important because of its pervasiveness in various imaging techniques such as transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and fabrication techniques like e-beam lithography (EBL).","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121127379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low power current sense amplifier based on phase transition material 基于相变材料的小功率电流检测放大器
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999425
Ahmedullah Aziz, Xueqing Li, N. Shukla, S. Datta, Meng-Fan Chang, V. Narayanan, S. Gupta
{"title":"Low power current sense amplifier based on phase transition material","authors":"Ahmedullah Aziz, Xueqing Li, N. Shukla, S. Datta, Meng-Fan Chang, V. Narayanan, S. Gupta","doi":"10.1109/DRC.2017.7999425","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999425","url":null,"abstract":"Phase transition materials (PTM) [1] have shown an immense promise for several applications such as realizing steep switching Phase-FETs [1], augmenting the read operation of memories [2-3], non-linear selectors for cross-point memory arrays [4] and in the design of neurons [5] and oscillators [6]. Their unique properties open up new avenues for other designs as well and therefore, there is a need to identify such opportunities to harness the full potential of PTM. In this work, we propose a low area low power current sense amplifier (SA) utilizing distinct properties of PTM such as abrupt insulator ↔ metal transitions and high resistivity ratio.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133701395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Corrugated channel In0.8Ga0.2As quantum well transistors for low power logic applications 用于低功耗逻辑应用的波纹通道In0.8Ga0.2As量子阱晶体管
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999496
Jeffrey A. Smith, M. Barth, K. Ni, M. Cantoro, Dong-Won Kim, S. Datta
{"title":"Corrugated channel In0.8Ga0.2As quantum well transistors for low power logic applications","authors":"Jeffrey A. Smith, M. Barth, K. Ni, M. Cantoro, Dong-Won Kim, S. Datta","doi":"10.1109/DRC.2017.7999496","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999496","url":null,"abstract":"InxGa1−xAs MOSFETs with superior carrier transport properties promise to deliver high current at reduced supply voltages [1-2]. Strained III-V quantum well FinFETs (QW-FF) have been investigated [3-4] as feasible pathways to low power logic. For sub-7 nm nodes, challenges in maintaining electrostatic integrity in FFs has led to the proposal of faceting the FF channel (corrugated channel) to produce diamond-shaped [7-8] electrically gate-all-around (eGAA) channels. In this work, we evaluate the impact of corrugating of channel width (Zeff) in In0.8Ga0.2As QW transistors on effective drive current (Ieff) gain and short channel effect (SCE) improvement for 7nm node.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"28 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132497816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Al0.65Ga0.35N channel high electron mobility transistors on AlN/ sapphire templates AlN/蓝宝石模板上的Al0.65Ga0.35N沟道高电子迁移率晶体管
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999444
S. Muhtadi, Seongmo Hwang, A. Coleman, F. Asif, Asif Khan
{"title":"Al0.65Ga0.35N channel high electron mobility transistors on AlN/ sapphire templates","authors":"S. Muhtadi, Seongmo Hwang, A. Coleman, F. Asif, Asif Khan","doi":"10.1109/DRC.2017.7999444","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999444","url":null,"abstract":"We report on an Al<inf>0 85</inf>Ga<inf>0.15</inf>N-Al<inf>0 65</inf>Ga<inf>0 35</inf>N high electron mobility transistor (HEMT) on low-defect AlN buffers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as 1800 Ω per square. Devices with a source-drain spacing of 5.5 μm and a gate length of 1.8 μm exhibited peak drain-currents as high as 290 mA/mm at a gate bias of +4 volts. This is at least an order of magnitude higher than previous reports. We also show that 3μm thick low-defect AlN buffer layers provide enough thermal conduction enabling stable device operation over 250<sup>o</sup>C.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114598288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport 首次合成了化学气相输运法生长的WS2纳米管和纳米带场效应晶体管
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999406
S. Fathipour, Hua-Min Li, P. Paletti, M. Remškar, S. Fullerton‐Shirey, A. Seabaugh
{"title":"First synthesized WS2 nanotube and nanoribbon field effect transistors grown by chemical vapor transport","authors":"S. Fathipour, Hua-Min Li, P. Paletti, M. Remškar, S. Fullerton‐Shirey, A. Seabaugh","doi":"10.1109/DRC.2017.7999406","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999406","url":null,"abstract":"While planar two-dimensional field effect transistors (FETs) are being widely explored [1], there are only a few reports of MoS2 [2-4] and WS2 [5-8] nanotube (NT) and nanoribbon (NR) FETs. A benefit of these crystalline forms is the absence of edges associated with traps, and the potential for ideal subthreshold swing with wrapped gates. Density functional theory predicts that the bandgap of MoS2 nanotubes remains direct and decreases with diameter [9] due to strain. This makes nanotubes appealing for tunnel FETs at the scaling limit because the decrease in bandgap should provide an increase in current. Here we report the first WS2 NT and NR FETs synthesized by chemical vapor transport (CVT) [10]. Prior reports on WS2 [5-8] are based on sulphurization of W and WO nanowhiskers.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131844033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-noise staircase, tunneling, and conventional avalanche photodetectors 低噪音楼梯，隧道，和传统的雪崩光电探测器
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999498
S. Bank
{"title":"Low-noise staircase, tunneling, and conventional avalanche photodetectors","authors":"S. Bank","doi":"10.1109/DRC.2017.7999498","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999498","url":null,"abstract":"Many novel materials and device structures have been explored over the years in the quest for low-noise avalanche photodetectors (APD), which are attractive for a wide range of applications in imaging, communications, sensing, etc. This includes the introduction of heterojunctions to modify impact ionization rates [1], culminating in the proposal by Capasso et al. of a solid-state analog to the photomultiplier tube — the staircase APD [2]. In this device, band engineering and a small applied bias is used to form the conduction band into a series of steps, where impact ionization occurs deterministically as electrons cross each step. Unfortunately, the technologically-available materials at the time did not possess the necessary combination of large conduction band offset, small bandgap bottom step, and large Γ-L energy separation required to achieve true staircase operation.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of 3.4 nm HfO2 into the gate stack of MOS2 and WSe2 top-gate field-effect transistors 将3.4 nm HfO2集成到MOS2和WSe2顶栅场效应晶体管的栅极堆栈中
2017 75th Annual Device Research Conference (DRC) Pub Date : 2017-06-01 DOI: 10.1109/DRC.2017.7999405
Katherine Price, A. Franklin
{"title":"Integration of 3.4 nm HfO2 into the gate stack of MOS2 and WSe2 top-gate field-effect transistors","authors":"Katherine Price, A. Franklin","doi":"10.1109/DRC.2017.7999405","DOIUrl":"https://doi.org/10.1109/DRC.2017.7999405","url":null,"abstract":"One of the main challenges inhibiting the integration of 2D crystals into top-gate field-effect transistors (FETs) is deposition of a uniform, scalable, high-quality dielectric. The most common and controlled method of deposition of thin dielectric films is atomic layer deposition (ALD); however, the inert surface of 2D materials offers no nucleation sites for the ALD precursors, resulting in non-uniform island growth [1-2]. While ALD can be used to grow thick high-k films on 2D crystals such as transition metal dichalcogenides (TMDs) [3-4], ultrathin films (< 5 nm) have not been possible without additional surface modification steps or the addition of a buffer layer [5-8]. In this work, we demonstrate the ability to grow sub-5 nm thick high-k films onto 2D crystals, including MoS2 and WSe2, using plasma-enhanced ALD (PEALD). Furthermore, we analyze the impact of the PEALD process on the 2D crystals and demonstrate the utility of the sub-5 nm films by fabricating top-gate FETs.","PeriodicalId":248087,"journal":{"name":"2017 75th Annual Device Research Conference (DRC)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133696517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书