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2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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A 4.6-GHz Class-F−1 high power CMOS power amplifier 4.6 ghz f−1类高功率CMOS功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048266
Feifei Chen, Yunshan Wang, Yuan-Hung Hsiao, Jung-Lin Lin, Yen-Chih Chen, Huei Wang
{"title":"A 4.6-GHz Class-F−1 high power CMOS power amplifier","authors":"Feifei Chen, Yunshan Wang, Yuan-Hung Hsiao, Jung-Lin Lin, Yen-Chih Chen, Huei Wang","doi":"10.1109/RFIT.2017.8048266","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048266","url":null,"abstract":"A 4.6-GHz Class-F−1 CMOS power amplifier implemented in 0.18-μm CMOS process for wireless applications with high output power and high efficiency is proposed. By using harmonics tuning technique and cascode devices, the proposed power amplifier achieves an output power of 27.8-dBm with power-add-efficiency (PAE) of 32% and quiescent 158-mW dc power consumption.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133154525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A wide-band high-efficiency envelope tracking supply modulator for cellular front-end module 一种用于蜂窝前端模块的宽带高效包络跟踪电源调制器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048273
Yanbin Xiao, Quan Li, Yu Liu, Zhiqiang Li, Haiying Zhang
{"title":"A wide-band high-efficiency envelope tracking supply modulator for cellular front-end module","authors":"Yanbin Xiao, Quan Li, Yu Liu, Zhiqiang Li, Haiying Zhang","doi":"10.1109/RFIT.2017.8048273","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048273","url":null,"abstract":"An Envelope Tracking (ET) supply modulator used for battery supplied Front-End Module(FEM) is fabricated with Global Foundries 0.18μm silicon-on-insulator (SOI) CMOS process. The hybrid topology supply modulator employs ground-boosting technique to improve efficiency. A novel compensation topology along with a novel OTA are used for improved GBW and stability with a limited quiescent current. In measurement, for 6MHz CW signal and 7.3Ω//220pF load, the supply modulator achieves an efficiency of 85% with a SFDR of 57dBc and an efficiency of 80% with a SFDR of 38dBc.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122900957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
X-band GaN MMIC power amplifier for the SSPA of a SAR system 用于SAR系统SSPA的x波段GaN MMIC功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048093
Donghwnag Shin, I. Yom, Dong-Wook Kim
{"title":"X-band GaN MMIC power amplifier for the SSPA of a SAR system","authors":"Donghwnag Shin, I. Yom, Dong-Wook Kim","doi":"10.1109/RFIT.2017.8048093","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048093","url":null,"abstract":"An X-band monolithic microwave integrated circuit (MMIC) power amplifier for Synthetic Aperture Radar (SAR) systems has been implemented using a 0.25 μm AlGaN/GaN HEMT process on a SiC substrate. The MMIC power amplifier has an output power of 45 dBm (30 W) to 46 dBm (40 W) and a power-added efficiency of 38–44 % from 8.8 to 10.4 GHz with an associated power gain of 17 dB under the pulsed bias condition of a 10% duty cycle and 100 μs pulse width. The developed MMIC power amplifier will be applied to the solid-state power amplifier (sSPA) for future satellite SAR systems.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A low-loss 60GHz integrated antenna switch in 65nm CMOS 65纳米CMOS低损耗60GHz集成天线开关
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048286
K. K. Tokgoz, Seitaro Kawai, K. Okada, A. Matsuzawa
{"title":"A low-loss 60GHz integrated antenna switch in 65nm CMOS","authors":"K. K. Tokgoz, Seitaro Kawai, K. Okada, A. Matsuzawa","doi":"10.1109/RFIT.2017.8048286","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048286","url":null,"abstract":"A 60GHz integrated antenna switching architecture is presented for millimeter-wave transceiver system. This circuit topology re-uses the last stage's transistor of power amplifier (PA) and the first stage's transistor of low-noise amplifier (LNA) as the switching elements, and the matching blocks for PA and LNA. A two-stage LNA and a two-stage PA integrated together as antenna switch is fabricated on 65nm CMOS process. The presented method has lower loss than conventional quarter-wavelength based switches theoretically. LNA and PA are designed considering switching operation; hence there is less area penalty when compared with conventional methods. 2.9dB minimum noise figure (NF) in the receiver mode is measured, and 2 dBm of OP1dB is measured in the transmitter mode.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Digital PLL design challenges for cellular RFICs 蜂窝射频集成电路的数字锁相环设计挑战
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048235
Sangsoo Ko, Chih-Wei Yao, Joonhee Lee, Sangwoo Han, Daehyeon Kwon, Wing-Fai Loke, Ronghua Ni, T. Cho
{"title":"Digital PLL design challenges for cellular RFICs","authors":"Sangsoo Ko, Chih-Wei Yao, Joonhee Lee, Sangwoo Han, Daehyeon Kwon, Wing-Fai Loke, Ronghua Ni, T. Cho","doi":"10.1109/RFIT.2017.8048235","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048235","url":null,"abstract":"Digital PLL design challenges for cellular RFICs are presented. 5 digital PLLs are integrated in 28nm CMOS to support 3-Rx carrier aggregation (CA)/2-TxCA of FD-LTE/TD-LTE, GSM/EDGE, WCDMA/HSPA, and TD-SCDMA. The 400 kHz fractional spur of GSM/EDGE Tx LO is < −68 dBc for all channels. The integrated phase noise (IPN) degradation due to DCO-to-DCO coupling is < 0.5 dB even if two fractional PLLs are locked at same frequency.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125065458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design w波段CMOS放大器设计中L-2L和通反射线去嵌入方法的比较
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048281
Ibrahim Abdo, K. K. Tokgoz, T. Fujimura, K. Okada, A. Matsuzawa
{"title":"Comparison between L-2L and thru-reflect-line de-embedding methods for W-band CMOS amplifier design","authors":"Ibrahim Abdo, K. K. Tokgoz, T. Fujimura, K. Okada, A. Matsuzawa","doi":"10.1109/RFIT.2017.8048281","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048281","url":null,"abstract":"L-2L de-embedding method was proved accurate at millimeter-wave (mm-wave) frequencies around 60GHz. However, it was never quantitatively compared to a more complicated method at frequencies as high as 100GHz. In this paper, L-2L and TRL de-embedding methods are compared by applying both on test structures fabricated using CMOS 65nm process. More focus will be given to the W-band frequencies by comparing the measurement results of a W-band amplifier with simulation results that are based on both of the de-embedding methods.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Broadband THz CMOS on-chip antenna using stacked resonators 采用堆叠谐振器的宽带太赫兹CMOS片上天线
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048251
Wonseok Choe, Jinho Jeong
{"title":"Broadband THz CMOS on-chip antenna using stacked resonators","authors":"Wonseok Choe, Jinho Jeong","doi":"10.1109/RFIT.2017.8048251","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048251","url":null,"abstract":"In this paper, we present a broadband THz CMOS on-chip antenna. The bandwidth of the on-chip antenna is improved by stacking four resonators on the top of a standard patch antenna. The proposed antenna was fabricated using 65-nm CMOS process, and the performance was verified by simulation and measurement. The simulation and measurement results show that the antenna can exhibit the fractional bandwidth for 10-dB return loss greater than 10%, and radiation efficiency greater than 15% at 300 GHz.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130564567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A V-band high linearity sub-harmonic I/Q demodulator using transformer coupling 一种使用变压器耦合的v波段高线性次谐波I/Q解调器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048247
Yu-Teng Chang, Hsing-Yu Chen, Hsin-Chia Lu
{"title":"A V-band high linearity sub-harmonic I/Q demodulator using transformer coupling","authors":"Yu-Teng Chang, Hsing-Yu Chen, Hsin-Chia Lu","doi":"10.1109/RFIT.2017.8048247","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048247","url":null,"abstract":"In this paper, we propose a high linearity CMOS sub-harmonic I/Q demodulator at V-band using CMOS 90 nm process. We adopt frequency doubler to double input LO frequency and use transformer to couple 2LO signal to mixer core. In addition, transformer coupling is used to replace stacked transistors to improve linearity. Cross couple pair is also utilized as active load to enhance conversion gain. The measured peak conversion gain is −7.9 dB under LO power of 9 dBm. The IP1dB and nP3 are 0 dBm and 9 dBm, respectively. The total DC power consumption is only 13.68 mW for 1.2 V supply voltage. To our best knowledge this demodulator has the best linearity at V-band.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126467665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Frequency discriminator based phase noise filter for high fidelity clock 基于鉴频器的高保真时钟相位噪声滤波器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048236
Shilei Hao, T. Hu, Q. Gu
{"title":"Frequency discriminator based phase noise filter for high fidelity clock","authors":"Shilei Hao, T. Hu, Q. Gu","doi":"10.1109/RFIT.2017.8048236","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048236","url":null,"abstract":"Low phase noise frequency source is the key block in the electronic systems. This paper reviews the recently published frequency discriminator based phase noise filter (PNF) techniques for the high fidelity clock. The proposed linear and Bang-Bang phase detector based PNFs are detailed in terms of the design concern, phase noise sensitivity improvement and advantages compared with other techniques. The proof-of-concept demonstrations achieve large phase noise suppression with good sensitivity for a 10 GHz clock. In addition, the benefit of PNF application in the array system is addressed. Outlook and future work of the PNF are also discussed.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127692721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progresses in R&D and production of GaN HEMT based power amplifiers 基于GaN HEMT的功率放大器的研究与生产进展
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048090
Sangmin Lee, Byoung-Chul Jun, Youn-Kook Jung, S. Choi, Min-Chul Han, Hyeyoung Jung, K. Oh, Jin-Man Jin, Inseop Seo, Hwejong Kim, Yongkwan Kim, Sungjae Ha, Hosang Kwon
{"title":"Recent progresses in R&D and production of GaN HEMT based power amplifiers","authors":"Sangmin Lee, Byoung-Chul Jun, Youn-Kook Jung, S. Choi, Min-Chul Han, Hyeyoung Jung, K. Oh, Jin-Man Jin, Inseop Seo, Hwejong Kim, Yongkwan Kim, Sungjae Ha, Hosang Kwon","doi":"10.1109/RFIT.2017.8048090","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048090","url":null,"abstract":"This report describes recent progresses in development and production of GaN HEMT based power amplifiers in Wavice Inc., such as discrete transistors, s-band internally matched packaged transistors, 5W 3.5 GHz Doherty amplifiers, S-band Tx module and 4kW C-band high power amplifiers. Especially for s-band internally matched transistors and power amplifiers, more than 1500 products have been produced and qualified. The RF performance variations and reliability data from the qualification of power amplifiers are summarized.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128958176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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