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2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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A differential W-band amplifier in 130 nm SiGe BiCMOS process 130 nm SiGe BiCMOS制程差分w波段放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048250
Guiyun Jiang, Jixin Chen, Debin Hou, W. Hong
{"title":"A differential W-band amplifier in 130 nm SiGe BiCMOS process","authors":"Guiyun Jiang, Jixin Chen, Debin Hou, W. Hong","doi":"10.1109/RFIT.2017.8048250","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048250","url":null,"abstract":"A differential 104 GHz amplifier has been demonstrated in 130 nm SiGe BiCMOS process. The amplifier features a 3-stage differential cascode architecture with on chip interstage matching. The amplifier's stability is improved by using transmission line inductor in the cascode structure. With stacking circuit architecture, the amplifier could tolerate up to 3 V supply voltage without reliability concern. From the on-wafer measurement results, the amplifier shows a peak gain of 17 dB at 104 GHz with the 3-dB bandwidth of 15 GHz. It also delivers 6.1 dBm saturated output power under 3V supply. The chip draws the current of 70mA.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131812477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An ultra-broadband low noise amplifier in GaAs 0.1-μm pHEMT process for radio astronomy application 射电天文应用的0.1 μm pHEMT GaAs超宽带低噪声放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048296
Yen-Chih Chen, Yunshan Wang, Chau-Ching Chiong, Huei Wang
{"title":"An ultra-broadband low noise amplifier in GaAs 0.1-μm pHEMT process for radio astronomy application","authors":"Yen-Chih Chen, Yunshan Wang, Chau-Ching Chiong, Huei Wang","doi":"10.1109/RFIT.2017.8048296","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048296","url":null,"abstract":"An ultra-wideband low noise amplifier (LNA) in 0.1-μm GaAs pHEMT process designed with the inductive feedback gain-boosting technique is presented. The proposed LNA is designed with the feedback structure to compensate the high frequency gain and improve the gain flatness. With only two stages, the 3-dB bandwidth of the LNA covers from 3.8 to 19.8 GHz and 1-dB bandwidth covers from 4.2 to 17.3 GHz. The measured small signal gain (S21) is 20.4 dB and the measured noise figure is 1.2 dB at 14 GHz with dc power consumption of 40 mW. The chip area is 1.5 × 1.0 mm2.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124194044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Education materials of electricity and magnetism using MATLAB 电磁学教材用MATLAB编写
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048275
T. Hirano, J. Hirokawa
{"title":"Education materials of electricity and magnetism using MATLAB","authors":"T. Hirano, J. Hirokawa","doi":"10.1109/RFIT.2017.8048275","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048275","url":null,"abstract":"Education materials of electricity and magnetism using MATLAB are presented to improve efficiency of education. Source code becomes simple by using high-layer programming language MATLAB which support matrix operations and graphics routines. Students can concentrate on understanding of physical phenomena. Some parameters can be changed in the source code to see difference of problems.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124195151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A W-band power amplifier with LC balun in 0.13 μm SiGe BiCMOS process 基于0.13 μm SiGe BiCMOS工艺的LC平衡w波段功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048249
Huanbo Li, Jixin Chen, Debin Hou, S. Peng, W. Hong
{"title":"A W-band power amplifier with LC balun in 0.13 μm SiGe BiCMOS process","authors":"Huanbo Li, Jixin Chen, Debin Hou, S. Peng, W. Hong","doi":"10.1109/RFIT.2017.8048249","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048249","url":null,"abstract":"This paper presents a differential W-band power amplifier combined with LC balun in a commercial 0.13 μm SiGe BiCMOS technology. The proposed amplifier consists of one cascode stage and two common-emitter stages. In the cascode stage, the bypass capacitor at the base node of the upper transistor, which is sensitive to the amplifier stability, is analyzed. Measured gain of over 15 dB is achieved from 74 to 84 GHz with a peak value of 17.4 dB at 80 GHz. The input and output return losses are better than 8 dB and 10 dB, respectively. The saturated output power (Psat) and 1-dB compression (P1dB) are measured to be 14.2 dBm and 11.9 dBm at 78 GHz, respectively. The amplifier consumes the power of 301 mW with 1.7 V & 3 V supply and an area of 1.2 mm2.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132326081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Multi-octave linear efficient GaN power amplifier 多倍频程线性高效氮化镓功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048242
J. Moon, Jongchan Kang, R. Grabar, H. Fung, P. Chan, H. Tai, Dave Brown
{"title":"Multi-octave linear efficient GaN power amplifier","authors":"J. Moon, Jongchan Kang, R. Grabar, H. Fung, P. Chan, H. Tai, Dave Brown","doi":"10.1109/RFIT.2017.8048242","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048242","url":null,"abstract":"GaN RF technology has continued to demonstrate state-of-the-art power, efficiency, linearity, and low-noise performance in RF and mm-wave band. Here, we report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate-length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier approach, where each cell consists of main and gm3 cells. The small signal gain was >10 dB over the band, with saturated CW output power of ∼35 dBm at Vdd = 17 V. The PAE improved by 7%–10% within the band compared to the previous NDPA with 150-nm gate-length GaN FETs. Based on two-tone testing, the linear NDPA showed improved OIP3 of ∼50 dBm, compared to OIP3 of 42 dBm for the NDPA without linearization. Under QPSK LTE waveform, the ACPR was improved by ∼10 dBc at average output power of 23 dBm, without digital pre-distortion.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126534083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS 采用变压器组合和中和技术的40nm COMS v波段功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048220
Jun-Kai Wang, Yu-Hsuan Lin, Yuan-Hung Hsiao, Kuang-Sheng Yeh, Huei Wang
{"title":"A V-band power amplifier with transformer combining and neutralization technique in 40-nm COMS","authors":"Jun-Kai Wang, Yu-Hsuan Lin, Yuan-Hung Hsiao, Kuang-Sheng Yeh, Huei Wang","doi":"10.1109/RFIT.2017.8048220","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048220","url":null,"abstract":"A V-band transformer-base power amplifier (PA) is implemented in 40nm CMOS. It is a three-stage PA with eight-way transformer combining at output stage. This PA uses the transformers with dc path of metal-one and neutralization technique to improve the passive loss and asymmetric problem, as well as the gain and stability. The PA achieves a measured saturated output power (Psat) of 19.8 dBm with 18.3% peak power-added efficiencies (PAE) at 60 GHz. The peak gain is 25.5 dB at 54.5 GHz with a 3-dB bandwidth of 11.4 GHz from 51 to 62.4 GHz.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121341108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 1.7-GHz GaN MMIC Doherty power amplifier using an adaptive bias circuit with a quadrature coupler 采用自适应偏置电路和正交耦合器的1.7 ghz GaN MMIC Doherty功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048092
Seungkyeong Lee, Sangmin Lee, Seunghoon Kang, Songcheol Hong
{"title":"A 1.7-GHz GaN MMIC Doherty power amplifier using an adaptive bias circuit with a quadrature coupler","authors":"Seungkyeong Lee, Sangmin Lee, Seunghoon Kang, Songcheol Hong","doi":"10.1109/RFIT.2017.8048092","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048092","url":null,"abstract":"A 2-stage 1.7-GHz Doherty power amplifier (PA) with an adaptive bias (ADB) circuit was designed for small-cell base station applications. An uneven power cell size ratio was used to provide a large back-off efficiency for high peak-to-average power ratio (PAPR) signals. To simplify the power divider and inter-stage matching network, a lumped Lange-type quadrature coupler was used. The leakage signal from the isolated port of the coupler was used as an input signal for the ADB circuit of the peaking amplifier. The PA was implemented in a 0.25-μm GaN on a SiC MMIC process. For a 1.7-GHz continuous wave, the PA has a 45.8% power added efficiency (PAE) at the output power of 38.6-dBm and a 31.2% PAE at 7-dB back-off power. For an LTE downlink signal, adjacent channel leakage ratio (ACLR) of −25.9-dBc was obtained at the average output power of 31.4-dBm without a digital pre-distortion (DPD).","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125921472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A ZVS active diode rectifier for wireless power transmission using voltage-time-conversion DLL 一种采用电压-时间转换DLL的用于无线电力传输的ZVS有源二极管整流器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048270
K. Miyaji, H. Shinohara
{"title":"A ZVS active diode rectifier for wireless power transmission using voltage-time-conversion DLL","authors":"K. Miyaji, H. Shinohara","doi":"10.1109/RFIT.2017.8048270","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048270","url":null,"abstract":"A CMOS active diode rectifier with voltage-time conversion (VTC) delay locked-loop (DLL) circuit is proposed to achieve zero-voltage switching (ZVS) operation for an efficient wireless power transmission system. The proposed VTC DLL can achieve stable ZVS under process variations. The proposed circuit is implemented in a standard 0.18um CMOS process using 3.3V I/O MOSFETs. The maximum power conversion efficiency of 78% is obtained at 39mW output.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126032001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wireless powering of miniaturized neurostimulator 微型神经刺激器的无线供电
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048214
Sanghoek Kim
{"title":"Wireless powering of miniaturized neurostimulator","authors":"Sanghoek Kim","doi":"10.1109/RFIT.2017.8048214","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048214","url":null,"abstract":"Recent finding of analytical bound on the efficiency of wireless power transfer to a miniature implant and its implementation is reviewed. The optimal source is theoretically solved by modeling the tissue as a multilayer geometry. The optimal source is physically synthesized using a slot array structure whose performance approaches closely to the theoretical bound. The development of highly efficient power delivery system miniaturizes a cardiac neuro-stimulator to a mm-sized, removing the battery out of the device. The neuro-stimulator is demonstrated for a rabbit.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125165168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A CMOS X-band FMCW generator IC for radar applications 用于雷达应用的CMOS x波段FMCW发生器IC
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048226
Sungho Lee, Dongsun Kim, Lourence Jeon
{"title":"A CMOS X-band FMCW generator IC for radar applications","authors":"Sungho Lee, Dongsun Kim, Lourence Jeon","doi":"10.1109/RFIT.2017.8048226","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048226","url":null,"abstract":"This paper describes a CMOS X-band frequency-modulated continuous wave (FMCW) generator IC for radar applications. The FMCW generator is based on a frequency synthesizer-N structure with a delta-sigma modulator. To provide stable bandwidth switching timing under loop parameter variations, an adaptive bandwidth control technique is proposed. In addition, a waveform generator is integrated to generate various FMCW profiles. The FMCW generator was fabricated with 0.13-μm 1-poly 7-metal RF CMOS technology. The active area of the prototype IC is 2.1 × 2.4 mm2. The phase noise at a 2-MHz frequency offset is −108.8 dBc/Hz.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116522708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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