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2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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Compact RF rectifier circuit for ambient energy harvesting 紧凑的射频整流电路，用于环境能量收集
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-09-20 DOI: 10.1109/RFIT.2017.8048256
M. Mansour, H. Kanaya
{"title":"Compact RF rectifier circuit for ambient energy harvesting","authors":"M. Mansour, H. Kanaya","doi":"10.1109/RFIT.2017.8048256","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048256","url":null,"abstract":"This paper presents the design, implementation, and evaluation of a miniature rectifier circuit for RF energy harvesting applications. The proposed design aims to give a comprehensive account of the efficiency degradation corresponding to the minimal RF input power less than 0dBm. Our design is based on the optimization of a compact rectifier circuit for capturing the ambient RF power from the wireless applications at frequency 2.45GHz. A co-simulation procedure between electromagnetic (EM) and SPICE simulation have been presented. The circuit shows a simulated RF-DC conversion efficiency of 68% at −10dBm while the measured is 33% at −5dBm. The practical sensitivity of this circuit is very low where the output voltage of 8mV could be detected at RF input signal of −30dBm.A rectifier prototype has been fabricated and tested.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124965956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
2.37-dBm-output 288–310 GHz frequency multiplier in 40 nm CMOS 2.37- dbm输出288-310 GHz倍频器，40nm CMOS
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-09-20 DOI: 10.1109/RFIT.2017.8048279
K. Katayama, K. Takano, S. Amakawa, T. Yoshida, M. Fujishima
{"title":"2.37-dBm-output 288–310 GHz frequency multiplier in 40 nm CMOS","authors":"K. Katayama, K. Takano, S. Amakawa, T. Yoshida, M. Fujishima","doi":"10.1109/RFIT.2017.8048279","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048279","url":null,"abstract":"We introduce a 288–310 GHz frequency multiplier fabricated with 40 nm CMOS technology. With 410.3 mW power consumption, this frequency multiplier has a conversion gain of 4.52 dB including that of its driver amplifier. The proposed system for input power / phase control of the power combiner enhances the output power of the frequency multiplier to 2.37 dBm at 300 GHz.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122452996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 416-mW 32-Gbit/s 300-GHz CMOS receiver 416mw 32 gbit /s 300 ghz CMOS接收器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-09-20 DOI: 10.1109/RFIT.2017.8048291
S. Hara, K. Katayama, K. Takano, R. Dong, I. Watanabe, N. Sekine, A. Kasamatsu, T. Yoshida, S. Amakawa, M. Fujishima
{"title":"A 416-mW 32-Gbit/s 300-GHz CMOS receiver","authors":"S. Hara, K. Katayama, K. Takano, R. Dong, I. Watanabe, N. Sekine, A. Kasamatsu, T. Yoshida, S. Amakawa, M. Fujishima","doi":"10.1109/RFIT.2017.8048291","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048291","url":null,"abstract":"This paper reports on a 300-GHz CMOS receiver with an LNA-less architecture that operates above NMOS unity-power-gain frequency, fmax. Both low power consumption and high conversion gain are achieved using a high-performance tripler-last multiplier combined with a downconversion mixer. Its conversion gain and 3-dB bandwidth are −18 dB and 33 GHz, respectively. The receiver achieves a wireless data rate of 32 Gb/s with 16QAM.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"19 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130120943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A review of microwatt low-noise amplifier for microwave and millimeter-wave IoT applications 微波和毫米波物联网应用的微瓦低噪声放大器综述
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-09-20 DOI: 10.1109/RFIT.2017.8048293
Hamed Alsuraisry, Shao-Chang Hsiao, Yi-Hsien Lin, Po-Yu Li, Jeng‐Han Tsai, Tian-Wei Huang
{"title":"A review of microwatt low-noise amplifier for microwave and millimeter-wave IoT applications","authors":"Hamed Alsuraisry, Shao-Chang Hsiao, Yi-Hsien Lin, Po-Yu Li, Jeng‐Han Tsai, Tian-Wei Huang","doi":"10.1109/RFIT.2017.8048293","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048293","url":null,"abstract":"In this paper, a review of microwatt low-noise amplifier (LNA) is presented. To achieve gain improvement and noise figure reduction simultaneously, a gain-boosting technique using transformer feedback is adopted in this LNA design. By employing current-reused, and forward-body-bias techniques, LNA can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining good gain performance. From the measurement results, under a supply voltage of 0.63V, the LNA exhibits a minimum noise figure of 3.66 dB and a gain of 14.7 dB with only 387μW dc power consumption.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132952261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Low phase noise and wideband oscillators using injection- and frequency-locked loop technique 低相位噪声和宽带振荡器采用注入和锁频环路技术
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048225
K. Peng, Chan-Hung Lee, De-Guei Wong, Fu-Kang Wang, T. Horng
{"title":"Low phase noise and wideband oscillators using injection- and frequency-locked loop technique","authors":"K. Peng, Chan-Hung Lee, De-Guei Wong, Fu-Kang Wang, T. Horng","doi":"10.1109/RFIT.2017.8048225","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048225","url":null,"abstract":"This paper presents a novel injection- and frequency-locked loop (IFLL) for reducing phase noise of wideband oscillators, which uses an injection-locked oscillator (ILO) to amplify and phase-shift the feedback signal in the IFLL. In this paper, the frequency domain analysis is presented to characterize the proposed IFLL and compared with the experimental results. Consequently, the oscillators that use the IFLL exhibit remarkable phase noise reduction, which is 5.5–9.3 dB better than that achieved using conventional frequency-locked loops (FLLs) at 1 MHz offset frequency, over a wide operating bandwidth of 54%.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115636467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Bond-wire interconnected 60-GHz low-profile series fed E-shaped patch array with parasitic patches Bond-wire互连60ghz低轮廓串联馈电寄生贴片e型贴片阵列
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048222
T. Jang, Y. H. Han, H. Kim, C. Byeon, C. Park
{"title":"Bond-wire interconnected 60-GHz low-profile series fed E-shaped patch array with parasitic patches","authors":"T. Jang, Y. H. Han, H. Kim, C. Byeon, C. Park","doi":"10.1109/RFIT.2017.8048222","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048222","url":null,"abstract":"In this paper, bond-wire interconnected 60-GHz low-profile 4-element series fed E-shaped patch antenna array with parasitic patches is presented for practical use. The proposed antenna shows 14.5dBi peak realized gain, 14GHz 3-dB gain bandwidth, and 10GHz impedance bandwidth. The proposed antenna with bond-wire interconnect can provide 14.2dBi peak realized gain, 14GHz 3-dB gain bandwidth, and 14GHz impedance bandwidth, and this band fully covers the 60–GHz ISM band. Although the proposed antenna interconnected to CMOS chip with bond-wire, the radiation pattern was not distorted at all.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115035890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 100–123GHz CMOS frequency doubler with 5.5dBm output power and high fundamental rejection 100-123GHz CMOS倍频器，输出功率5.5dBm，高基波抑制
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048228
Ibrahim Abdo, K. K. Tokgoz, T. Fujimura, K. Okada, A. Matsuzawa
{"title":"A 100–123GHz CMOS frequency doubler with 5.5dBm output power and high fundamental rejection","authors":"Ibrahim Abdo, K. K. Tokgoz, T. Fujimura, K. Okada, A. Matsuzawa","doi":"10.1109/RFIT.2017.8048228","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048228","url":null,"abstract":"This paper presents a frequency doubler that operates at W-band and D-band frequencies between 100GHz to 123GHz. An optimized buffering method is proposed to achieve saturated output power as high as 5.5dBm with over 60dBc rejection of the fundamental frequency at −8dBm input power. The overall circuit power consumption is 116mW. The doubler was designed and implemented using 65nm CMOS technology.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122385489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Power recycling using Wilkinson power combiner with pulsewidth modulation 功率回收使用威尔金森功率合成器与脉宽调制
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048257
Tzu-Han Wang, Jau-Horng Chen
{"title":"Power recycling using Wilkinson power combiner with pulsewidth modulation","authors":"Tzu-Han Wang, Jau-Horng Chen","doi":"10.1109/RFIT.2017.8048257","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048257","url":null,"abstract":"This paper presents a method for recycling the wasted power in the isolation resistor of a Wilkinson power combiner when the input signals are not identical. An RF-dc rectifier is used to replace the isolation resistor of the Wilkinson power combiner to recycle the power that would originally be dissipated in the isolation resistor. To validate the proposed technique, a prototype modified Wilkinson power combiner is constructed using commercially available components. The power combiner is tested with a 1-MHz pulsewidth modulated (PWM) radio-frequency (RF) signal with a carrier frequency of 836.5 MHz and an input power level of 25 dBm. Measurement results show that the proposed technique achieved a maximum RF-dc conversion efficiency of 52% when the PWM duty cycle reaches 50% and retain the characteristic of a conventional Wilkinson power combiner.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"18 13","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114044627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Mixer-based injection-locked frequency tripler 基于混频器的注入锁定三倍频器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048229
C. Tu, Sheng-Wen Chen, Hong-Wei Kao, Janne-Wha Wu
{"title":"Mixer-based injection-locked frequency tripler","authors":"C. Tu, Sheng-Wen Chen, Hong-Wei Kao, Janne-Wha Wu","doi":"10.1109/RFIT.2017.8048229","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048229","url":null,"abstract":"An injection-locked frequency tripler with a push-push frequency doubler and a mixer core is demonstrated. The core power consumption of this design takes 5.34 mW. The locking range is from 13.5 GHz to 20.8 GHz. If concerning about the output power flatness, the acceptable frequency range is from 15.9 GHz to 17.1 GHz. The output power is −5 dBm. In addition, the harmonic suppression is −15 dB at least for the second harmonic and more than 30dB for the fundamental one. Another attractive feature is the individual locking range for each varactor tuning voltage covers 3.5 GHz at 0 dBm input power.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128779286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra-wideband efficient linearized 10W GaN-HEMT power amplifier 超宽带高效线性化10W GaN-HEMT功率放大器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048245
C. T. Nghe, D. Maassen, Xuan Anh Nghiem, G. Boeck
{"title":"Ultra-wideband efficient linearized 10W GaN-HEMT power amplifier","authors":"C. T. Nghe, D. Maassen, Xuan Anh Nghiem, G. Boeck","doi":"10.1109/RFIT.2017.8048245","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048245","url":null,"abstract":"This paper contributes a design of an ultrawideband, high efficiency and linearized 10 W GaN-HEMT power amplifier (PA). A systematic design approach using simulation-based source- and load-pull analyses in order to find optimum load and source impedances was applied for the proposed PA. Under continuous wave (CW) large-signal measurements, the design is confirmed by experimental results, which show a state-of-the-art achievement of 165.2% fractional bandwidth (FBW) from 0.4 to 4.2 GHz with output power greater than 10 W. The moderate gain is fiat at 10.7 ± 1 dB, and the power added efficiency (PAE) stays in the range of 47–80%.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"2141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130296848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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