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2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)最新文献

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A wideband receiver front-end employing feedback input matching and feed-forward blocker cancelling 采用反馈输入匹配和前馈阻塞抵消的宽带接收机前端
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048284
Duksoo Kim, S. Nam
{"title":"A wideband receiver front-end employing feedback input matching and feed-forward blocker cancelling","authors":"Duksoo Kim, S. Nam","doi":"10.1109/RFIT.2017.8048284","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048284","url":null,"abstract":"In this paper, we propose a wideband receiver that can achieve wideband input matching characteristic and remove out-of-band blocker signals. A wideband input matching is achieved by adding a feedback path to a basic wideband receiver structure consisting of low-noise transconductance amplifier (LNTA), passive mixer, and baseband transimpedance amplifier (TIA). We also proposed a method of cancelling the blocker signal by adding an auxiliary downconversion path. This method can minimize the additional circuit by using the transparent characteristics of the passive mixer and can eliminate the blocker signal without causing the performance degradation of the receiver to be large. A wideband receiver circuit designed with 65nm process was simulated. The receiver can cover the frequency range from 50 MHz to 1.95 GHz and has 47.9 dB gain and 4.1 dB noise figure performance. It also achieves an additional 9.8 dB of blocker signal cancellation over the basic wideband receiver.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115905523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A low-profile polarization-reconfigurable cavity antenna based on partially reflective surface 一种基于部分反射面的低轮廓偏振可重构腔体天线
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048258
Robin Jeanty, Shih-Yuan Chen
{"title":"A low-profile polarization-reconfigurable cavity antenna based on partially reflective surface","authors":"Robin Jeanty, Shih-Yuan Chen","doi":"10.1109/RFIT.2017.8048258","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048258","url":null,"abstract":"A low-profile polarization-reconfigurable cavity antenna for use on the US/Taiwan UHF RFID band (902–928 MHz) is presented. The whole structure is formed by a partially reflective surface (PRS) atop a one-wavelength square slot loop as its radiating source. Thanks to the PRS, the cavity antenna radiates uni-directionally with a stable gain of 6 dBic and a low profile. The square slot loop is dual fed with, on each branch, a 360° continuous phase shifter whose response can be changed through the use of varactor diodes. Thus, linear, right- and left-handed circular polarization can be obtained at will.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116816436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 68.1-to-73.8GHz E-band low phase noise QPLL with amplifier feedback QVCO in 65-nm CMOS 68.1 ~ 73.8 ghz带放大器反馈QVCO的e波段低相位噪声QPLL
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048238
Xin Zhu, Lei Zhang, Yan Wang
{"title":"A 68.1-to-73.8GHz E-band low phase noise QPLL with amplifier feedback QVCO in 65-nm CMOS","authors":"Xin Zhu, Lei Zhang, Yan Wang","doi":"10.1109/RFIT.2017.8048238","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048238","url":null,"abstract":"A fully integrated 68.1–73.8GHz E-band low phase noise quadrature phase-locked loop (QPLL) is proposed. The quadrature voltage-controlled oscillator (QVCO) with a symmetrical coupling network formed by diode-connected transistors is used to reduce the phase error. In order to improve the oscillation frequency and reduced the phase noise, a feedback network composed of buffer amplifiers and capacitors is introduced to the QVCO. The locking-range divider chain of PLL consists of an injection-locked frequency divider (ILFD) with a 3-bit binary-weighted switch-capacitor bank, current mode logic (CML) dividers, and a multiple modulus divider (MMD). The proposed circuit was designed in a 65-nm CMOS process, and the QVCO achieves a tuning range of 8% from 68.1GHz to 73.8GHz with a phase noise of −95dBc/Hz at 1MHz offset while consuming only 12.5mW. The QPLL achieves an excellent phase noise of −93 dBc/Hz at 1MHz offset during the range, consuming 37.1mW of power and with a FoM of −174.1dBc/Hz.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115298279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IC-level hardware security and safety for smart society 智能社会的ic级硬件安全保障
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048240
N. Miura
{"title":"IC-level hardware security and safety for smart society","authors":"N. Miura","doi":"10.1109/RFIT.2017.8048240","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048240","url":null,"abstract":"This paper overviews recent research works on IC-level hardware security and safety for future smart society. Slightly-analog circuit design with EM-field engineering on IC interconnect is the key measure for high-performance yet low-cost solution. An EM attack sensor utilizing inductive-coupling coil and a physical structure-based permanent memory with capacitive-coupling readout are introduced as two specific design examples. The Si prototype demonstrates the feasibility and validity of the proposed concepts for the enhanced hardware security and safety.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm 一种140 GHz至160 GHz有源阻抗调谐器，用于55纳米BiCMOS的原位噪声表征
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048233
S. Bouvot, J. A. Gonçalves, A. Bossuet, T. Quemerais, S. Lépilliet, G. Ducournau, F. Danneville, D. Gloria
{"title":"A 140 GHz to 160 GHz active impedance tuner for in-situ noise characterization in BiCMOS 55 nm","authors":"S. Bouvot, J. A. Gonçalves, A. Bossuet, T. Quemerais, S. Lépilliet, G. Ducournau, F. Danneville, D. Gloria","doi":"10.1109/RFIT.2017.8048233","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048233","url":null,"abstract":"A millimeter-wave active impedance tuner is implemented on the STMicroelectronics BiCMOS 55 nm technology for in-situ noise characterization. The presented circuit is composed of a two stage low noise amplifier with a gain of 11 dB and a NF of 7.5 dB at 150 GHz loading a 64 states passive impedance tuner. This active tunable circuit provides a reflection coefficient Γ > 0.5 and a S21 parameter between −7 dB and +4.5 dB in the 140–160 GHz frequency range. At 146 GHz, the noise factor value is from 8 dB to 10.5 dB. The core area is 0.336 mm2. Its measured performances in noise and S parameters make its integration possible in an in-situ noise characterization bench on Silicon.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"80 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123226035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 300 GHz single varactor doubler in 40 nm CMOS 40nm CMOS的300ghz单变容倍频器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048260
Tuan-Anh Vu, K. Takano, M. Fujishima
{"title":"A 300 GHz single varactor doubler in 40 nm CMOS","authors":"Tuan-Anh Vu, K. Takano, M. Fujishima","doi":"10.1109/RFIT.2017.8048260","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048260","url":null,"abstract":"This paper presents a 300 GHz single varactor doubler suitable for ultrahigh-speed wireless communications. The proposed varactor doubler realized in TSMC 40 nm CMOS can be integrated with other CMOS components to generate millimetter-wave signals at 300 GHz frequency band. At the pumping frequency of 150 GHz, input power of 10 dBm, the doubler results in an output power of −3.5 dBm at 300 GHz. The doubler consumes no DC power while it occupies a chip area of 0.27 mm2 including probe pads.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"889 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123247518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A preliminary analysis of domain coupling in package power distribution network 分组配电网中域耦合的初步分析
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048276
Byoungjin Bae, Seungwon Kim, Youngmin Kim, Seokhyeong Kang, Il-Joon Kim, Kwangseok Kim, Sunwon Kang, K. Han
{"title":"A preliminary analysis of domain coupling in package power distribution network","authors":"Byoungjin Bae, Seungwon Kim, Youngmin Kim, Seokhyeong Kang, Il-Joon Kim, Kwangseok Kim, Sunwon Kang, K. Han","doi":"10.1109/RFIT.2017.8048276","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048276","url":null,"abstract":"The coupling of power domains in a typical package power distribution network (PDN) is investigated, mainly focusing on the effect of ground structures and substrate parameters. From the simulated impedance parameter data, the self and the coupling capacitances are calculated. The preliminary study shows that the effect of the bottom ground planes has the most dominant effect on the domain coupling, and the ground plane between adjacent power domains can be effectively used to reduce the domain coupling.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130622254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A Ku-band direct RF undersampling receiver with an intermittent-mode amplifier 带间歇模式放大器的ku波段直接射频欠采样接收器
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048255
N. Suematsu, Takeo Owada, T. Motoyoshi, S. Kameda
{"title":"A Ku-band direct RF undersampling receiver with an intermittent-mode amplifier","authors":"N. Suematsu, Takeo Owada, T. Motoyoshi, S. Kameda","doi":"10.1109/RFIT.2017.8048255","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048255","url":null,"abstract":"A direct RF undersampling reception has been focused to realize compact and low power consumption receiver. This architecture requires a higher gain LNA than the conventional one. In this paper, we fabricate a Ku-band direct RF undersampling receiver together with a power switching (intermittent-mode) LNA to reduce the power consumption. The DC power of intermittent-mode LNA turns off during the hold period of S/H circuit. As a result, DC power consumption of the LNA can be reduced to 1/2 without the degradation of reception performance. We have measured the performances of fabricated receiver and have confirmed the effect of intermittent-mode LNA usage.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134434011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chip design of class-C quadrature VCO using the quadruple-push coupling technique 采用四推耦合技术的c类正交压控振荡器芯片设计
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048254
W. Lai, S. Jang, K. Lu
{"title":"Chip design of class-C quadrature VCO using the quadruple-push coupling technique","authors":"W. Lai, S. Jang, K. Lu","doi":"10.1109/RFIT.2017.8048254","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048254","url":null,"abstract":"This article presents a class-C quadrature voltage-controlled oscillator (QVCO) based on two identical Class-C oscillators coupled by the 4th harmonic and the QVCO was implemented in TSMC 0.18μm CMOS 1P6M process technology. Compared to conventional parallel-coupled QVCO, the proposed QVCO can achieve low phase noise and wide tuning range. The proposed QVCO operates from 2.58GHz to 3.25GHz. The measured phase noise at 1MHz offset frequency is −128.8dBc/Hz and the measured phase error of quadrature signals is 0.45° at the oscillation frequency 2.58GHz. With 1V power supply, the power consumption is 4mW. The figure of merit (FOM) of the proposed QVCO is −191dBc/Hz, and the FOMt is −198.2 dBc/Hz. The die area is 1197μm × 595μm.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129843884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
33∼50GHz CMOS receiver with wideband RF, IF and LO chain 33 ~ 50GHz CMOS接收器，具有宽带RF, IF和LO链
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2017-08-01 DOI: 10.1109/RFIT.2017.8048246
Ching-Ying Huang, Kun-Long Wu, R. Hu, Chi-Yang Chang
{"title":"33∼50GHz CMOS receiver with wideband RF, IF and LO chain","authors":"Ching-Ying Huang, Kun-Long Wu, R. Hu, Chi-Yang Chang","doi":"10.1109/RFIT.2017.8048246","DOIUrl":"https://doi.org/10.1109/RFIT.2017.8048246","url":null,"abstract":"This manuscript describes the Q-band 90nm-CMOS receiver design where the 33∼50GHz RF-LNA, actively-biased double-balanced mixer, 10GHz IF amplifier, wideband frequency tripler and power amplifier in the LO chain are all integrated into one single chip. With overall power consumption of 170mW under 1.2V bias, the measured conversion gain is 15dB, noise figure close to 8dB, input-referred P1dB around −30dBm, and the LO-IF port isolation is more than 60dB. Therefore, it can be easily driven by an external 11∼16GHz signal source and used in applications such as next-generation broadband mobile communications where several specific Q-band frequency points have been considered. However, contrary to most receiver designs where the optimization is carried out over a relatively narrow bandwidth, here the main challenge lies in how to effectively extend the RF, IF, and LO bandwidth simultaneously without rendering performance deterioration. By possessing such broadband RF, IF, and LO characteristics, this Q-band circuit is also eligible for use in radio-astronomical, atmospheric, and other scientific instrumentations.","PeriodicalId":245817,"journal":{"name":"2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134275565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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