{"title":"The role of photons in cryptanalysis","authors":"Juliane Krämer, M. Kasper, Jean-Pierre Seifert","doi":"10.1109/ASPDAC.2014.6742985","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742985","url":null,"abstract":"Photons can be exploited to reveal secrets of security ICs like smartcards, secure microcontrollers, and cryptographic coprocessors. One such secret is the secret key of cryptographic algorithms. This work gives an overview about current research on revealing these secret keys by exploiting the photonic side channel. Different analysis methods are presented. It is shown that the analysis of photonic emissions also helps to gain knowledge about the attacked device and thus poses a threat to modern security ICs. The presented results illustrate the differences between the photonic and other side channels, which do not provide fine-grained spatial information. It is shown that the photonic side channel has to be addressed by software engineers and during chip design.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133151820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Scattered refresh: An alternative refresh mechanism to reduce refresh cycle time","authors":"T. V. Kalyan, Ravi Kasha, M. Mutyam","doi":"10.1109/ASPDAC.2014.6742956","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742956","url":null,"abstract":"With realization of high density DRAM devices, the amount of time spent in refreshing a DRAM bank is increasing. This reduces the availability of the bank to the requests from the processing cores, leading to degradation in performance. In this work we target to reduce the refresh cycle time of the DRAM device by scattering the rows in a refresh operation to different subarrays and leveraging the available parallelism in their access. Considering 8Gb devices, we show that Scattered Refresh achieves up to 10.2% of overall system performance improvement. Scattered Refresh, being orthogonal to the existing refresh handling techniques, can be employed along with any of them, boosting their effectiveness further.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"138 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133787493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variation","authors":"Tiansong Cui, Yanzhi Wang, X. Lin, Shahin Nazarian, Massoud Pedram","doi":"10.1109/ASPDAC.2014.6742884","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742884","url":null,"abstract":"Operating circuits in the near/sub-threshold regime can lower the circuit energy consumption at the expense of lowering the circuit speed. In addition near/sub-threshold can result in higher sensitivity to process-induced variations and transient noise. FinFETs have been proposed as an alternative to planar CMOS devices in sub-20nm CMOS technology nodes due to their more effective channel control, steep sub-threshold slope, high ON/OFF current ratio, low power consumption, and so on. Characteristics of FinFETs operating in the near/sub-threshold regime make it difficult to verify the timing of a circuit using conventional statistical static timing analysis (SSTA) techniques. Current source modeling (CSM) methods, which have been proposed to increase the accuracy of timing analysis in dealing with arbitrary shapes of the input signal waveforms, are the appropriate solution for performing SSTA on FinFET-based circuits. This paper thus extends the CSM to such circuits, operating in the near/sub-threshold voltage regime. In particular, FinFET devices with independent gate control and subject to process variations are modelled. The key idea of the proposed CSM approach is to combine non-linear analytical models and low-dimensional CSM lookup tables to simultaneously achieve high modeling accuracy and low time/space complexity.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114372696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Symbolic computation of SNR for variational analysis of sigma-delta modulator","authors":"J. Cheng, G. Shi","doi":"10.1109/ASPDAC.2014.6742931","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742931","url":null,"abstract":"Signal-to-noise ratio (SNR) is an important design metric for switched-capacitor sigma-delta modulators (SC-SDMs). In an automatic synthesis environment, fast SNR computation is of paramount importance. So far the main SNR computation method has been behavioral simulation. Other less accurate methods are based on empirical formulas. These methods could not contribute too much to the enhancement of synthesis efficiency. In this work a highly efficient and purely symbolic SNR computation method is proposed. The difficulty in the computation of noise power (requiring integration of a rational function) is overcome by Taylor polynomial approximation. Together with a symbolic loop-transfer analysis tool, the SNR can be computed fully symbolically. This novel computation method is applied to variational SC-SDM analysis. The effectiveness and efficiency are compared to behavioral Monte Carlo simulation results.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121865325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jie Guo, Zhijie Chen, Danghui Wang, Z. Shao, Yiran Chen
{"title":"DPA: A data pattern aware error prevention technique for NAND flash lifetime extension","authors":"Jie Guo, Zhijie Chen, Danghui Wang, Z. Shao, Yiran Chen","doi":"10.1109/ASPDAC.2014.6742955","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742955","url":null,"abstract":"The recent research reveals that the bit error rate of a NAND flash cell is highly dependent on the stored data patterns. In this work, we propose Data Pattern Aware (DPA) error protection technique to extend the lifespan of NAND flash based storage systems (NFSS). DPA manipulates the ratio of 1's and 0's in the stored data to minimize occurrence of the data patterns which are susceptible to bit error noise. Consequently, the NAND flash cell bit error rate is reduced, leading to system endurance extension. Our simulation result shows that, with marginal hardware and power overhead, DPA scheme can increase the NFSS lifetime by up to 4×, offering a complementing solution to other lifetime enhancement techniques like wear-leveling.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125974593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Clermidy, R. Héliot, A. Valentian, C. Gamrat, O. Bichler, M. Duranton, B. Belhadj, O. Temam
{"title":"Advanced technologies for brain-inspired computing","authors":"F. Clermidy, R. Héliot, A. Valentian, C. Gamrat, O. Bichler, M. Duranton, B. Belhadj, O. Temam","doi":"10.1109/ASPDAC.2014.6742951","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742951","url":null,"abstract":"This paper aims at presenting how new technologies can overcome classical implementation issues of Neural Networks. Resistive memories such as Phase Change Memories and Conductive-Bridge RAM can be used for obtaining low-area synapses thanks to programmable resistance also called Memristors. Similarly, the high capacitance of Through Silicon Vias can be used to greatly improve analog neurons and reduce their area. The very same devices can also be used for improving connectivity of Neural Networks as demonstrated by an application. Finally, some perspectives are given on the usage of 3D monolithic integration for better exploiting the third dimension and thus obtaining systems closer to the brain.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125648692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Georgios Faldamis, Weiwei Jiang, Gennette Gill, S. Nowick
{"title":"A low-latency asynchronous interconnection network with early arbitration resolution","authors":"Georgios Faldamis, Weiwei Jiang, Gennette Gill, S. Nowick","doi":"10.1109/ASPDAC.2014.6742911","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742911","url":null,"abstract":"A new asynchronous arbitration node is introduced for use as a building block in an asynchronous interconnection network. The target network topology is a variant Mesh-of-Trees (MoT), combining a binary fan-out (i.e. routing) network and a binary fan-in (i.e. arbitration) network, which is becoming widely used for multi-core shared-memory interfaces. The two key features are: (i) each fan-in node can resolve its arbitration and pre-allocate the corresponding input channel, before the actual data arrives; and (ii) a lightweight shadow monitoring network fast forwards information as soon as data enters the network without synchronization to a fixed-rate clock, notifying each fan-in node on its path to enable the early arbitration. Simulations of the new arbitration node, using IBM 90nm technology and an ARM standard cell library, indicate latency reductions up to 54.4% over prior designs, while maintaining roughly comparable throughput. Network-level simulations were then performed on eight diverse synthetic benchmarks, comparing the new approach (\"early arbitration\") with two earlier alternative asynchronous MoT networks (\"baseline\" and \"predictive\"), using a mix of random and deterministic traffic. Considerable improvements in system latency were obtained on all benchmarks, ranging from 13.0% to 38.7%, with especially strong benefits for the two most adversarial benchmarks.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126930535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Optimal SWAP gate insertion for nearest neighbor quantum circuits","authors":"R. Wille, Aaron Lye, R. Drechsler","doi":"10.1109/ASPDAC.2014.6742939","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742939","url":null,"abstract":"Motivated by its promising applications e.g. for database search or factorization, significant progress has been made in the development of automated design methods for quantum circuits. But in order to keep up with recent physical developments in this domain, new technological constraints have to be considered. Limited interaction distance between gate qubits is one of the most common of these constraints. This led to the development of several strategies aiming at making a given quantum circuit nearest neighbor-compliant by inserting SWAP gates into the existing structure. Usually these strategies are of heuristic nature. In this work, we present an exact approach that enables nearest neighbor-compliance by inserting a minimal number of SWAP gates. Experiments demonstrate the applicability of the approach which enabled a comparison of results obtained by heuristic methods to the actual optimum.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"38 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114133196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. A. Kagalwalla, Michale Lam, K. Adam, Puneet Gupta
{"title":"EUV-CDA: Pattern shift aware critical density analysis for EUV mask layouts","authors":"A. A. Kagalwalla, Michale Lam, K. Adam, Puneet Gupta","doi":"10.1109/ASPDAC.2014.6742882","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742882","url":null,"abstract":"Despite the use of mask defect avoidance and mitigation techniques, finding a usable defective mask blank remains a challenge for Extreme Ultraviolet Lithography (EUVL) at sub-10nm node due to dense layouts and low CD tolerance. In this work, we propose a pattern shift-aware metric called critical density, which can quickly evaluate the robustness of EUV layouts to mask defects (300-1300x faster than Monte Carlo, with average mask yield root mean square error (RMSE) ranging from 0.08%-6.44%), thereby enabling design-level mask defect mitigation techniques. Our experimental results indicate that reducing layout regularity improves the ability of layouts to tolerate mask defects via pattern shift.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116647399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hybrid CMOS/magnetic Process Design Kit and SOT-based non-volatile standard cell architectures","authors":"G. D. Pendina, K. Jabeur, G. Prenat","doi":"10.1109/ASPDAC.2014.6742971","DOIUrl":"https://doi.org/10.1109/ASPDAC.2014.6742971","url":null,"abstract":"This paper gives an overview of hybrid CMOS/magnetic logic circuit design. We describe the magnetic devices, the expected advantages of using them beside CMOS to help to circumvent the incoming limits of VLSI circuits and the tools required to design such circuits, including Process Design Kit (PDK) and Standard Cells (SC). As a case of study, we particularly focus on a new and promising device technology based on Spin Orbit Torque (SOT) effect.","PeriodicalId":234635,"journal":{"name":"2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}