Hybrid CMOS/magnetic Process Design Kit and SOT-based non-volatile standard cell architectures

G. D. Pendina, K. Jabeur, G. Prenat
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引用次数: 4

Abstract

This paper gives an overview of hybrid CMOS/magnetic logic circuit design. We describe the magnetic devices, the expected advantages of using them beside CMOS to help to circumvent the incoming limits of VLSI circuits and the tools required to design such circuits, including Process Design Kit (PDK) and Standard Cells (SC). As a case of study, we particularly focus on a new and promising device technology based on Spin Orbit Torque (SOT) effect.
混合CMOS/磁性工艺设计套件和基于sot的非易失性标准电池架构
本文概述了CMOS/磁逻辑电路的混合设计。我们描述了磁性器件,将它们与CMOS一起使用以帮助规避VLSI电路的输入限制的预期优势,以及设计此类电路所需的工具,包括工艺设计套件(PDK)和标准单元(SC)。作为一个研究案例,我们特别关注了一种新的、有前途的基于自旋轨道扭矩(SOT)效应的器件技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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