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Design of D-STATCOM for Power Quality Improvement in Wind Power Systems 用于风电系统电能质量改进的D-STATCOM设计
CSVTU Research Journal on Engineering and Technology Pub Date : 2020-01-27 DOI: 10.30732/rjet.20190802002
Kapil Kumar Badoliya, Rakesh Singh Lodhi
{"title":"Design of D-STATCOM for Power Quality Improvement in Wind Power Systems","authors":"Kapil Kumar Badoliya, Rakesh Singh Lodhi","doi":"10.30732/rjet.20190802002","DOIUrl":"https://doi.org/10.30732/rjet.20190802002","url":null,"abstract":"The study of problem is when high value reactive load adding or removing that time voltage sag and swell, we are trying to removing sag and swell we can say that stable for all time. The D-STATCOM ac current mode activities in active and reactive current are suppressed by mode shape; along these lines fortifying the receptive current exercises on the heap transport voltage guideline. It can be clearly seen from the obtained results that the voltage attains stability after a short surge even on sudden change in load conditions. The aforesaid conditions have been verified by both load addition and load removal. Application is all generation system used (wind, thermal, solar, etc.), D-STATCOM implement in wind power systems.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116132590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of Particle Size of Fine Aggregate on Filling Ability and Segregation Resistance of Self-Compacting Concrete 细集料粒径对自密实混凝土填充性能和抗离析性能的影响
CSVTU Research Journal on Engineering and Technology Pub Date : 2020-01-27 DOI: 10.30732/rjet.20190802006
Er. Ankush Gupta, R. Chandak, M. K. Koshta
{"title":"Influence of Particle Size of Fine Aggregate on Filling Ability and Segregation Resistance of Self-Compacting Concrete","authors":"Er. Ankush Gupta, R. Chandak, M. K. Koshta","doi":"10.30732/rjet.20190802006","DOIUrl":"https://doi.org/10.30732/rjet.20190802006","url":null,"abstract":"This paper presents the study of influence of particle size of fine aggregate on the filling ability and segregation resistance of Self Compacting Concrete (SCC). The filling ability was assessed from the results of mortar spread diameter by mini truncated cone and the segregation resistance was assessed from the results of mini V-funnel flow time of mortar fraction of SCC as per EFNARC guidelines at 0, 15, 30, 45 and 60 minutes of mixing. 8 mixes of mortar fraction of SCC consist of two different cement replacement percentage (CRP) by fly ash are investigated for four different particle sizes of fine aggregate. Key WordsSelf-Compacting Concrete; Mortar fraction; Filling ability; Segregation resistance; Spread diameter; V-funnel flow time. Broad AreaCivil Engineering. Sub-AreaStructural Engineering.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116399759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Methods for Reconfigurable Filters A Review 可重构滤波器的设计方法综述
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-31 DOI: 10.30732/rjet.20190801001
S. Gagare, Dolly Reney
{"title":"Design Methods for Reconfigurable Filters A Review","authors":"S. Gagare, Dolly Reney","doi":"10.30732/rjet.20190801001","DOIUrl":"https://doi.org/10.30732/rjet.20190801001","url":null,"abstract":"The new design methods of microwave filter has proved its significance for use in wireless communication systems. Modern wireless communication systems require microwave filters to have stringent specifications such as compact size, robust, conformal, light weight and more importantly cost effective while maintaining its electrical characteristics. Micro-strip filter design and reconfigurable filters present a better prospectus in this regards as it meets the specifications of modern wireless communication applications. Reconfigurable filters can provide control over parameters such as frequency, bandwidth and selectivity while reducing the need of number of switches sandwiched between electrical components. Different methods have provided a new dimension for designing microwave filters .In this article, we present a review on design methods for reconfigurable band-pass filters for next generation wireless technologies such as 4G, 5G and IOT.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130276312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design Methods for Reconfigurable Filters: A Review 可重构滤波器的设计方法综述
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-31 DOI: 10.30732/rjet.20190501001
Sunil Raosaheb Gagare ., Dolly Reney .
{"title":"Design Methods for Reconfigurable Filters: A Review","authors":"Sunil Raosaheb Gagare ., Dolly Reney .","doi":"10.30732/rjet.20190501001","DOIUrl":"https://doi.org/10.30732/rjet.20190501001","url":null,"abstract":"The new design methods of microwave filter has proved its significance for use in wireless communication systems. Modern wireless communication systems require microwave filters to have stringent specifications such as compact size, robust, conformal, light weight and more importantly cost effective while maintaining its electrical characteristics. Micro-strip filter design and reconfigurable filters present a better prospectus in this regards as it meets the specifications of modern wireless communication applications. Reconfigurable filters can provide control over parameters such as frequency, bandwidth and selectivity while reducing the need of number of switches sandwiched between electrical components. Different methods have provided a new dimension for designing microwave filters .In this article, we present a review on design methods for reconfigurable band-pass filters for next generation wireless technologies such as 4G, 5G and IOT.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132812199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison and analysis of different conduction modes of three phase voltage source inverter 三相电压源逆变器不同导通方式的比较与分析
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/rjet.20190801002
P. Chandrakar
{"title":"Comparison and analysis of different conduction modes of three phase voltage source inverter","authors":"P. Chandrakar","doi":"10.30732/rjet.20190801002","DOIUrl":"https://doi.org/10.30732/rjet.20190801002","url":null,"abstract":"A Simulink model for voltage source inverter using switching function concept is studied with the help of MAT-LAB/SIMULINK in this paper. The switching function concept is a powerful tool in understanding and optimizing the performance of static power converters/inverters. A three phase output can be obtained from a configuration of six IGBT. Three types of control signals can be applied to the switched: 1800 conduction, 1200 conduction or 1500 conduction. The output voltages and current of a three phase voltage-source inverter is studied in this paper. The quality of output voltage can be improved by only changing the conduction mode which is very simple to implement. The switching operation of a three phase inverter is controlled so that output is achieved at every 600 angle in 1200, 1800, 1500 conduction mode. Harmonics are created in the output of these kind of inverter. These harmonics not only reduces the life period of appliances, but also causes excessive wear in the device or appliances used in the day to day life of human being. By analyzing the output harmonic spectra of output voltages and current (line to line current and line to line voltages), their total harmonic distortion (THD) is found and compared.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116016266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Survey on ESD protection design in different RF circuits 不同射频电路中ESD保护设计综述
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/rjet.20190801005
Monica Ramteke, R. Nisha, Shresth Gupta
{"title":"A Survey on ESD protection design in different RF circuits","authors":"Monica Ramteke, R. Nisha, Shresth Gupta","doi":"10.30732/rjet.20190801005","DOIUrl":"https://doi.org/10.30732/rjet.20190801005","url":null,"abstract":"ESD (electrostatic discharge) protection circuits are always needed in any of the RF circuits to protect the circuit from electrostatic discharge. There are different types of ESD protection circuits. It is very important to protect the circuit from CMOS devices. In this review  we have discussed ESD protection design in different RF circuits through different papers. In introduction part we have discussed causes of ESD. The problem is also discussed in the paper at the conclusion point.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133647527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Study on Refrigerant 制冷剂的研究
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/RJET.20190801003
Sumit Kumar Bandey
{"title":"A Study on Refrigerant","authors":"Sumit Kumar Bandey","doi":"10.30732/RJET.20190801003","DOIUrl":"https://doi.org/10.30732/RJET.20190801003","url":null,"abstract":"The working agent in a refrigerating system that absorbs carries or releases heat from the place to be cooled or refrigerated can be termed as a refrigerant. This heat transfer generally takes place through a phase change of the refrigerant. In this paper, we shall study about the different refrigerants used in various refrigeration systems. At present, we have a large number of refrigerants available to us depending on the requirements of the particular refrigerating system. This paper is intended to serve as an introductory guide to the study of refrigerants.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134076825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Review Article on Fin Field Effect Transistors Technology 翅片场效应晶体管技术综述
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/rjet.20190801004
Nidhi Dhurandhar, P. Dwivedi
{"title":"A Review Article on Fin Field Effect Transistors Technology","authors":"Nidhi Dhurandhar, P. Dwivedi","doi":"10.30732/rjet.20190801004","DOIUrl":"https://doi.org/10.30732/rjet.20190801004","url":null,"abstract":"There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"519 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133697266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative and parametric study of base isolated structure 基础隔震结构的比较与参数化研究
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/rjet.20190801010
Smit Gupta
{"title":"Comparative and parametric study of base isolated structure","authors":"Smit Gupta","doi":"10.30732/rjet.20190801010","DOIUrl":"https://doi.org/10.30732/rjet.20190801010","url":null,"abstract":"For the development of better design approach to protect the structures from earthquake damage, base isolation, to reduce the seismic energy impacting on the structure has represented a change of paradigm since it came into the fore. Base isolation technique is most suitable for high rise building, the concept of base isolation is simple, it modifies the response of the building so that the ground can move below the structure without transmitting these motion into the building, seeing the growth of such technology it became necessary to asses the general and seismic response of such structure. The present study focuses on the comparative performance of two frame of different material properties consisting base isolator, which is performed under seismic condition. The base isolation system that is utilized is composed of  Rubber isolators. To reach the understanding of this  fixed-base and base  isolated structure the seismic analysis have performed on two types of structure and the responses are calculated considering different seismic zone. Thus, this paper aimed to compare the responses of simple rcc structure and steel structure due to Indian loadings and seismic zone variations Additionally  the structures are analysed and compared using elcentro earthquake data for assement of responses like interstorey drifts, displacement and base shear.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126619285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Review Article on Carbon Nanotube Field Effect Transistors Technology 碳纳米管场效应晶体管技术综述
CSVTU Research Journal on Engineering and Technology Pub Date : 2019-07-29 DOI: 10.30732/rjet.20190801007
Nidhi Dhurandhar, P. Dwivedi
{"title":"A Review Article on Carbon Nanotube Field Effect Transistors Technology","authors":"Nidhi Dhurandhar, P. Dwivedi","doi":"10.30732/rjet.20190801007","DOIUrl":"https://doi.org/10.30732/rjet.20190801007","url":null,"abstract":"Silicon industry is evolving and scaling down day by day. With the minimized size of the transistor, the craving for high performance devices also takes place. For MOSFET, size is limited and below some dimensions the device will undergo leakage current, parasitic capacitances, power dissipation issues. Hence, researchers has implemented a novel device named, CNTFET (Carbon NanoTube Field Effect Transistor). CNTFET provides high carrier mobility, reduction in delay and power consumption, better noise margin, suitable contact resistance and fast switching speed. In this review paper, different structures, CNTFET classifications, chiral vector and chirality has been discussed.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123251317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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