翅片场效应晶体管技术综述

Nidhi Dhurandhar, P. Dwivedi
{"title":"翅片场效应晶体管技术综述","authors":"Nidhi Dhurandhar, P. Dwivedi","doi":"10.30732/rjet.20190801004","DOIUrl":null,"url":null,"abstract":"There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET.","PeriodicalId":234213,"journal":{"name":"CSVTU Research Journal on Engineering and Technology","volume":"519 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Review Article on Fin Field Effect Transistors Technology\",\"authors\":\"Nidhi Dhurandhar, P. Dwivedi\",\"doi\":\"10.30732/rjet.20190801004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET.\",\"PeriodicalId\":234213,\"journal\":{\"name\":\"CSVTU Research Journal on Engineering and Technology\",\"volume\":\"519 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CSVTU Research Journal on Engineering and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30732/rjet.20190801004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CSVTU Research Journal on Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30732/rjet.20190801004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

我们研究过许多类型的晶体管。除此之外,在这里,我们讨论了一种详尽的金属氧化物场效应晶体管(MOSFET),即翅片场效应晶体管(FinFET)。基本上,我们已经审查了最苛刻和最有前途的场效应晶体管类型,它可以作为数字和模拟功能中晶体管应用和模拟的独家易于执行。为了提高半导体应用的执行和功率能力,FinFET可以在大块MOSFET上实现,并且也鼓励fet可以在32纳米技术上理想地执行。由于这些原因,作为短通道效应的一个问题是可以克服的。通过多栅极FinFET设计,可以有效地实现批量CMOS电路。我们将看到FinFET的结构、不同类型及其分类,以及一些使用FinFET设计的数字电路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Review Article on Fin Field Effect Transistors Technology
There are numerous types of transistors we have studied. Beyond them, here, we have discussed an exhaustive type of Metal Oxide Field Effect Transistor (MOSFET), that is, Fin Field Effect Transistor (FinFET). Basically, we have reviewed the most demanding and promising type of Field Effect Transistor, that allows as an exclusive easy execution of transistor applications and simulation, both in digital and analog functions. So as to improve the execution and power capability of semiconductor applications, FinFET can be implemented over bulk MOSFET and are also encouraging FETs that can perform ideally over 32 nanometers technology. And due to these, as an issue of the Short Channel Effects (SCEs) can be overcome. Through multi gate FinFET designs, bulk CMOS circuits can be implemented effectively. We will see structures, different types and their classifications and some digital circuits designed by using FinFET.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信