A Review Article on Carbon Nanotube Field Effect Transistors Technology

Nidhi Dhurandhar, P. Dwivedi
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引用次数: 2

Abstract

Silicon industry is evolving and scaling down day by day. With the minimized size of the transistor, the craving for high performance devices also takes place. For MOSFET, size is limited and below some dimensions the device will undergo leakage current, parasitic capacitances, power dissipation issues. Hence, researchers has implemented a novel device named, CNTFET (Carbon NanoTube Field Effect Transistor). CNTFET provides high carrier mobility, reduction in delay and power consumption, better noise margin, suitable contact resistance and fast switching speed. In this review paper, different structures, CNTFET classifications, chiral vector and chirality has been discussed.
碳纳米管场效应晶体管技术综述
硅工业正在不断发展,规模日益缩小。随着晶体管尺寸的最小化,对高性能器件的渴望也随之产生。对于MOSFET,尺寸是有限的,在某些尺寸以下,器件将经历漏电流,寄生电容,功耗问题。因此,研究人员已经实现了一种名为CNTFET(碳纳米管场效应晶体管)的新型器件。CNTFET提供高载流子迁移率,降低延迟和功耗,更好的噪声裕度,合适的接触电阻和快速的开关速度。本文讨论了不同的结构、CNTFET的分类、手性矢量和手性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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