2008 IEEE International Conference on Electron Devices and Solid-State Circuits最新文献_第4页

GaN Schottky barrier photodetectors with multi-MgN/GaN buffer 具有多mgn /GaN缓冲的GaN肖特基势垒光电探测器

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760683

K.H. Lee, P. Chang, S. Chang, Y. Wang, C. Kuo, S.L. Wu

引用次数: 0

NEMS based on top-down technologies: from stand-alone NEMS to VLSI NEMS & NEMS-CMOS integration 基于自顶向下技术的NEMS:从单机NEMS到VLSI NEMS和NEMS- cmos集成

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760714

E. Ollier, P. Andreucci, L. Duraffourg, É. Colinet, C. Durand, F. Casset, T. Ernst, S. Hentz, S. Labarthe, C. Marcoux, V. Nguyen, D. Renaud, E. Mile, P. Renaux, D. Mercier, P. Robert, P. Ancey, L. Bouchaillot

引用次数: 4

Design of dual-gigabit transceiver for fibre channel FC-1 layer 光纤通道FC-1层双千兆收发器设计

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760719

Guicai Sun, Dunshan Yu

引用次数: 1

Uniform Fe3O4- pyrrolidone nanofiber thin film 均匀Fe3O4-吡咯烷酮纳米纤维薄膜

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760725

M. Chung, T. Tsai, Chun-Rong Lin, Shin-Zong Lu, H. Lin, J. Tsai, Chin-Chen Chu

引用次数: 1

A full on-chip low-dropout linear regulator with enhanced line, load regulation 一个全片上低差线性稳压器，增强线路，负载调节

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760634

H.F. Ma, F. Zhou

引用次数: 2

Polysilicon nanowire chemical sensor based on CMOS standard process 基于CMOS标准工艺的多晶硅纳米线化学传感器

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760705

C.-W. Huang, S.-C. Hsu, C.-T. Lin

引用次数: 0

An energy-efficient ASIC with real-time work-on-demand for wireless body sensor network 一种用于无线身体传感器网络的高能效按需实时工作专用集成电路

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760681

Zhihua Wang, Xiaoyu Zhang, Xinkai Chen, Lingwei Zhang, Hanjun Jiang

{"title":"An energy-efficient ASIC with real-time work-on-demand for wireless body sensor network","authors":"Zhihua Wang, Xiaoyu Zhang, Xinkai Chen, Lingwei Zhang, Hanjun Jiang","doi":"10.1109/EDSSC.2008.4760681","DOIUrl":"https://doi.org/10.1109/EDSSC.2008.4760681","url":null,"abstract":"This paper presents an energy efficient ASIC design with the capability of real-time work-on-demand, targeting on the applications of wireless body sensor network (WBSN), especially on those for medical and heath purposes. Application specific requirements have been reviewed. A novel type of sensor node architecture is proposed with a hybrid of active/passive transceivers. The passive RF receiver with zero standby current gives the WBSN nodes the real capability of work-on-demand which is not allowed in previous architectures. A power management module with an optimized power mode control scheme has also implemented to provide various supply voltages for the sensor nodes, and in addition this module can provide the sensor nodes a flexible power mode control for the purpose of energy saving. An ultra-low-power MCU which supports the proposed architecture has been integrated in the ASIC, which can perform the functions of media access, signal flow control and networking. The proposed architecture has been verified through FPGA experiments, and the ASIC has been designed and fabricated using a standard 0.18 um CMOS process. The designed ASIC occupies a die area of 2 mm times 2.5 mm. The digital core of this ASIC has 72.8 K equivalent gate counts excluding the memories. A typical WBSN sensor node can be built with this ASIC in together with a commercial RF transceiver, the sensor parts and some other components, and our ASIC can serve as the main control part for such a node.","PeriodicalId":234055,"journal":{"name":"2008 IEEE International Conference on Electron Devices and Solid-State Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127830243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

A dual band CMOS two-stage variable gain low noise amplifier 一种双波段CMOS两级可变增益低噪声放大器

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760712

Juan Li, Feng Zhao, Yumei Huang, Zhiliang Hong

引用次数: 1

Novel asymmetric MOSFET structures for low power applications 用于低功耗应用的新型非对称MOSFET结构

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760736

N. Venkatagirish, R. Jhaveri, A. Tura, J. Woo

{"title":"Novel asymmetric MOSFET structures for low power applications","authors":"N. Venkatagirish, R. Jhaveri, A. Tura, J. Woo","doi":"10.1109/EDSSC.2008.4760736","DOIUrl":"https://doi.org/10.1109/EDSSC.2008.4760736","url":null,"abstract":"As MOSFET is scaled below 90 nm, many daunting challenges arise. Short channel effects (DIBL and VTH roll-off), off-state and gate leakage, parasitic capacitance and resistance severely limit the performance of these transistors. These, in addition to VDD scaling limitation and high sub-threshold swing (>60 mv/dec) give rise to high IOFF and make power dissipation an enormous challenge, especially for low power/low current applications. New device innovations are essential to achieve low IOFF and high gm with high ROUT for digital and analog applications respectively. Towards this end, novel asymmetric Tunneling Source MOSFETs are proposed in this paper. The main feature of these devices is the concept of gate controlled carrier injection through tunneling at the source junction. The tunneling source MOSFETs can be fabricated using conventional CMOS processes. These novel devices have the potential for steep sub-threshold behavior, improved ION/IOFF, high ROUT and gain (gm times ROUT) at low bias currents. They also possess excellent immunity against short channel effects which improves scalability into sub-50 nm regime and makes them an attractive candidate for low power digital and analog operations.","PeriodicalId":234055,"journal":{"name":"2008 IEEE International Conference on Electron Devices and Solid-State Circuits","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127098291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

High-Q VHF micromechanical filters using free-free beam resonators 使用自由-自由光束谐振器的高q甚高频微机械滤波器

2008 IEEE International Conference on Electron Devices and Solid-State Circuits Pub Date : 2008-12-01 DOI: 10.1109/EDSSC.2008.4760717

C.-J. Li, S.-K. Lin

引用次数: 2