Solar RRL最新文献_第4页

Hydrogen in Silicon Solar Cells: The Role of Diffusion

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-28 DOI: 10.1002/solr.202400668

Jonas Schön, Phillip Hamer, Benjamin Hammann, Christoph Zechner, Wolfram Kwapil, Martin C. Schubert

{"title":"Hydrogen in Silicon Solar Cells: The Role of Diffusion","authors":"Jonas Schön, Phillip Hamer, Benjamin Hammann, Christoph Zechner, Wolfram Kwapil, Martin C. Schubert","doi":"10.1002/solr.202400668","DOIUrl":"https://doi.org/10.1002/solr.202400668","url":null,"abstract":"A model for hydrogen in silicon is presented, which accounts for both in-diffusion and out-diffusion from a passivation layer (e.g., SiNx), as well as the known hydrogen reactions within the silicon matrix. The model is used to simulate hydrogen diffusion and reactions during contact firing in a solar cell process, with a particular focus on variations in the cooling process, the sample thickness, and boron doping levels. The model reproduces the measured differences in hydrogen concentration due to these variations and thus helps to understand hydrogen-induced surface degradation and the dependencies of light and elevated temperature-induced degradation (LeTID) on the cooling process due to the close relation of LeTID and hydrogen. The same model and parameters are utilized to simulate the subsequent annealing of the fired samples at temperatures ranging from 160 to 290 °C. By successfully modeling the development of boron–hydrogen pairs during dark annealing processes across varying temperatures and doping levels, it is demonstrated that diffusion toward the Si/SiNx interface explains the observed decrease in resistivity and reductions in boron–hydrogen concentrations over extended dark annealing durations. Our simulations show the necessity of considering the depth-dependent hydrogen distributions after the firing process for analyzing the dark annealing.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 1","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficiency Improvement of NiOx-Based Hole Transport Layers in Passivated Contact Crystalline Silicon Solar Cells

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-27 DOI: 10.1002/solr.202400727

Hai Zhang, Qian Kang, Yanhao Wang, Jingjie Li, Siyi Liu, Hui Yan, Shanting Zhang, Dongdong Li, Yongzhe Zhang

{"title":"Efficiency Improvement of NiOx-Based Hole Transport Layers in Passivated Contact Crystalline Silicon Solar Cells","authors":"Hai Zhang, Qian Kang, Yanhao Wang, Jingjie Li, Siyi Liu, Hui Yan, Shanting Zhang, Dongdong Li, Yongzhe Zhang","doi":"10.1002/solr.202400727","DOIUrl":"https://doi.org/10.1002/solr.202400727","url":null,"abstract":"Passivated contact crystalline silicon (c-Si) solar cells with nickel oxide (NiOx) as a hole transport layer (HTL) are a promising and efficient solar cell that has received much attention. However, the current low open circuit voltage (Voc) and low stability of c-Si solar cells with NiOx as the HTL are due to the bad passivation and the ion diffusion, which has limited the development of NiOx-based c-Si solar cells. Herein, the performance of doping-free asymmetric passivated contact c-Si heterojunction solar cells is improved by using hydrogen-doped aluminum oxide (HAl2O3) as the passivation layer and annealing in forming gas (nitrogen, hydrogen mixture FGA), as well as by introducing an economically saving composite Ni/Ag electrode. Finally, a 20.29% power conversion efficiency is achieved from p-Si/HAl2O3(FGA)/NiOx/Ni/Ag back-contact c-Si solar cells, which is the highest efficiency reported so far for c-Si solar cells with NiOx as the HTLs. Furthermore, the efficiency of the p-Si/HAl2O3(FGA)/NiOx/Ni/Ag remains above 20% after 30 days of storage in an atmospheric environment, demonstrating its long-term stability. This study demonstrates the potential for industrialization of NiOx-based HTL c-Si solar cells with high performance and high stability.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 2","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Analysis of Dynamic Building-Integrated Photovoltaic Shading System for High Technology Readiness Level Validation

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-27 DOI: 10.1002/solr.202400465

Tian Shen Liang, Paolo Corti, Pierluigi Bonomo, Francesco Frontini

{"title":"Performance Analysis of Dynamic Building-Integrated Photovoltaic Shading System for High Technology Readiness Level Validation","authors":"Tian Shen Liang, Paolo Corti, Pierluigi Bonomo, Francesco Frontini","doi":"10.1002/solr.202400465","DOIUrl":"https://doi.org/10.1002/solr.202400465","url":null,"abstract":"This article presents the performance analysis of a new dynamic and vertically oriented building-integrated photovoltaic (BIPV) shading device. The work forms part of a Swiss Pilot and Demonstration project. From technology readiness levels 5–7, it aims to validate the technology's consistency and replicability in the operational building and cost-effectiveness for marketability. The shading slats comprise two-string PV modules realized with laminated glazing layered by an outer white satin glass pane. For the small-scale mock-up, two designs are compared to quantify the effectiveness of temperature reduction and energy gain: 1) optimized—each string is connected to a bypass diode, and 2) standard—two strings are connected to a bypass diode. It is demonstrated that optimized slats have consistently lower module temperatures and higher energy yield, achieving more than 20% gain during spring and summer. There are no additional risks for consideration since no extreme temperature and humidity measurements are observed for the pilot installation at the actual building. The first floor's system produces a lower specific energy yield due to partial shading. Still, it can be worsened if the standard PV is used instead, highlighting the importance of a BIPV-specific consultancy for successfully implementing BIPV systems.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"8 24","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400465","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143253487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Broadband Light-Trapping Nanostructure for InGaP/GaAs Dual-Junction Solar Cells Using Nanosphere Lithography-Assisted Chemical Etching 利用纳米球光刻辅助化学蚀刻技术制备InGaP/GaAs双结太阳能电池的宽带光捕获纳米结构

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-27 DOI: 10.1002/solr.202470213

Shang-Hsuan Wu, Gabriel Cossio, Daniel Derkacs, Edward T. Yu

引用次数: 0

Pyridine-Functionalized Organic Molecules in Perovskite Solar Cells: Toward Defects Passivation and Charge Transfer

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-27 DOI: 10.1002/solr.202400736

Haoliang Cheng, Xufeng Zang, Shunwu Wang, Bin Cai

{"title":"Pyridine-Functionalized Organic Molecules in Perovskite Solar Cells: Toward Defects Passivation and Charge Transfer","authors":"Haoliang Cheng, Xufeng Zang, Shunwu Wang, Bin Cai","doi":"10.1002/solr.202400736","DOIUrl":"https://doi.org/10.1002/solr.202400736","url":null,"abstract":"Perovskite solar cells (PSCs) have garnered significant attention in recent years due to their high performance and cost-effective fabrication processes. However, the presence of defects in the bulk and interfaces of perovskite materials can significantly impact the photovoltaic performance and stability of these devices. One approach to addressing these defects is through the use of pyridine-based organic molecules. Pyridine functional molecules have shown promise in controlling the crystallization process of perovskite films, passivating defects, and enhancing charge carrier transport. These molecules can act as solvents, passivators, and charge transport layers in PSCs, contributing to improved device efficiency and stability. In this review, the use of pyridine-based organic molecules in PSCs is summarized, highlighting their roles and applications in different aspects of device performance. The interaction mechanisms of various pyridine functional molecules with perovskite materials are discussed, shedding light on the underlying principles governing their effectiveness in enhancing device performance. The challenges and opportunities in the utilization of pyridine functional molecules in PSCs are summarized. In addition, future potential strategies for designing pyridine functional multidentate ligands are promising, emphasizing the importance of understanding the interaction mechanisms and harnessing the unique properties of pyridine-based organic molecules for improved device performance and stability.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 2","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143120072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fine-Tuning Thickness-Dependent Molecular Aggregation for Enhanced Performance in Semitransparent Organic Photovoltaics 微调厚度相关的分子聚集，提高半透明有机光伏器件的性能

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-26 DOI: 10.1002/solr.202400745

Hong Zhang, Linge Xiao, Yingyu Zhang, Shilin Li, Weichao Zhang, Yuan Zhang, Huiqiong Zhou

{"title":"Fine-Tuning Thickness-Dependent Molecular Aggregation for Enhanced Performance in Semitransparent Organic Photovoltaics","authors":"Hong Zhang, Linge Xiao, Yingyu Zhang, Shilin Li, Weichao Zhang, Yuan Zhang, Huiqiong Zhou","doi":"10.1002/solr.202400745","DOIUrl":"https://doi.org/10.1002/solr.202400745","url":null,"abstract":"Semitransparent organic photovoltaics (ST-OPV) exhibit tremendous potential for application in integrated photovoltaic architecture. The reduction of the ratio of wide-bandgap donors in the active layer is crucial for enhancing both the power conversion efficiency (PCE) and the average visible light transmittance (AVT), which are key performance indicators for ST-OPV. Herein, successful suppression of the thickness-dependent transition from H-aggregates to J-aggregates in PM6 films was achieved through temperature control, significantly improving charge transport and extraction efficiency, thereby markedly enhancing the PCE of sequential processed pseudo p-i-n devices employing the Y6 acceptor. With ≈30% AVT maintained, the PCE increases from 6.50% to 11.10%, while the light utilization efficiency rises from 1.98% to 3.40%. Unlike previous studies primarily focused on optical coupling structure design, this research underscores the precise control of molecular aggregation behavior in the active layer material, demonstrating the innovativeness of material and structural design and offering new avenues and methodologies for the development of future semitransparent photovoltaic materials.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 2","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ordered Vacancy Compound Formation at the Interface of Cu(In,Ga)Se2 Absorber with Sputtered In2S3-Based Buffers: An Atomic-Scale Perspective Cu(In,Ga)Se2吸收体与溅射in2s3基缓冲器界面上有序空位化合物的形成：原子尺度的视角

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-24 DOI: 10.1002/solr.202400574

Oana Cojocaru-Mirédin, Dimitrios Hariskos, Wolfram Hempel, Ana Kanevce, Xiaowei Jin, Jens Keutgen, Mohit Raghuwanshi, Reinhard Schneider, Roland Scheer, Dagmar Gerthsen, Wolfram Witte

{"title":"Ordered Vacancy Compound Formation at the Interface of Cu(In,Ga)Se2 Absorber with Sputtered In2S3-Based Buffers: An Atomic-Scale Perspective","authors":"Oana Cojocaru-Mirédin, Dimitrios Hariskos, Wolfram Hempel, Ana Kanevce, Xiaowei Jin, Jens Keutgen, Mohit Raghuwanshi, Reinhard Schneider, Roland Scheer, Dagmar Gerthsen, Wolfram Witte","doi":"10.1002/solr.202400574","DOIUrl":"https://doi.org/10.1002/solr.202400574","url":null,"abstract":"The design of a Cd-free and wider-bandgap buffer layer is stringent for future Cu(In,Ga)Se2 (CIGSe) thin-film solar cell applications. For that, an In2S3 buffer layer alloyed with a limited amount of O (well below 25 mol%) has been proposed as a pertinent alternative solution to CdS or Zn(O,S) buffers. However, the chemical stability of the In2S3/CIGSe heterointerface when O is added is not completely clear. Therefore, in this work, the buffer/absorber interface for a series of sputter-deposited In2S3 buffers with and without O is investigated. It is found that the solar cell with the highest open-circuit voltage is obtained for the O-free In2S3 buffer sputtered at 220 °C. This improved open-circuit voltage could be explained by the presence of a 20 nm-thick ordered vacancy compound (OVC) at the absorber surface. A much thinner OVC layer (5 nm) or even the absence of this layer is found for the cell with In2(O0.25S0.75)3 buffer layer where O is inserted. The volume fraction of the OVC layer is directly linked with the magnitude of Cu diffusion from the CIGSe surface into the In2(OxS1−x)3 buffer layer. The O addition strongly reduces the Cu diffusion inside the buffer layer up to complete suppression for very high O contents in the buffer. Finally, it is discussed that the presence of the OVC layer may lower the valence band maximum, thereby forming a hole barrier, suppressing charge carrier recombination at the In2(OxS1−x)3/CIGSe interface, which could result in an increased open-circuit voltage.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"8 23","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400574","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142869119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Predicting the Electrical Behavior of Colored Photovoltaic Modules Integrating Absorptive or Diffusive Layers or PMMA Films Doped with Organic Chromophores 预测集成了吸收层、扩散层或掺杂有机发色团的 PMMA 薄膜的彩色光伏模块的电气行为

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-24 DOI: 10.1002/solr.202400570

Martina Pelle, Irene Motta, Gabriella Gonnella, Alessio Dessì, Lidia Armelao, Gregorio Bottaro, Massimo Calamante, Alessandro Mordini, David Moser

{"title":"Predicting the Electrical Behavior of Colored Photovoltaic Modules Integrating Absorptive or Diffusive Layers or PMMA Films Doped with Organic Chromophores","authors":"Martina Pelle, Irene Motta, Gabriella Gonnella, Alessio Dessì, Lidia Armelao, Gregorio Bottaro, Massimo Calamante, Alessandro Mordini, David Moser","doi":"10.1002/solr.202400570","DOIUrl":"https://doi.org/10.1002/solr.202400570","url":null,"abstract":"The advancement of photovoltaic (PV) technology is critical for sustainable energy production, with silicon-based solar cells being the most prevalent due to their efficiency and cost-effectiveness. In recent years, the use of materials to change the color of conventional silicon-based PV cells, materials that can be laminated or not during the construction of the PV module, has become widespread. Colored PV cells offer aesthetic versatility, making them suitable for integrated architectural applications. However, these materials affect the performance of the final product. This study focuses on developing a predictive model for the performance of colored silicon PV cells. A comprehensive approach combining experimental data and computational simulations is employed to understand the impact of various colors on the electrical performance of colored PV modules, based on the optical properties of the colored layers. The model demonstrates high accuracy across a range of coloring technologies, including selective absorbers, diffusive layers, and fluorescent materials. The developed model accurately predicts the performance metrics of colored PV cells, providing valuable insights for optimizing design and material selection.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 1","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/solr.202400570","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143118753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogenation Strategy for Al2O3/MoOx Passivating Contact in High-Efficiency Crystalline Silicon Solar Cells 高效晶体硅太阳能电池中 Al2O3/MoOx 钝化接触的氢化策略

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-22 DOI: 10.1002/solr.202400740

Yuner Luo, Yanhao Wang, Siyi Liu, Shaojuan Bao, Jilei Wang, Shan-Ting Zhang, Li Tian, Shihua Huang, Dongdong Li

{"title":"Hydrogenation Strategy for Al2O3/MoOx Passivating Contact in High-Efficiency Crystalline Silicon Solar Cells","authors":"Yuner Luo, Yanhao Wang, Siyi Liu, Shaojuan Bao, Jilei Wang, Shan-Ting Zhang, Li Tian, Shihua Huang, Dongdong Li","doi":"10.1002/solr.202400740","DOIUrl":"https://doi.org/10.1002/solr.202400740","url":null,"abstract":"Enhancing carrier selectivity and minimizing surface recombination are crucial factors for improving the efficiency of passivating contact crystalline silicon (c-Si) solar cells. This study introduces a two-step hydrogenation method, using atomic layer deposition of Al2O3 and forming gas annealing (FGA), in order to optimize the passivating contact stack. This approach not only improves the passivation quality but also reduces the contact resistance in the presence of a MoOx transport layer. However, excess hydrogen in Al2O3 could potentially diffuse into MoOx, reducing its work function and diminishing the field-effect passivation. By fine-tuning the FGA parameters, including temperature and duration, a conversion efficiency of 21.33% is achieved on p-type silicon. These results demonstrate a novel optimization strategy for passivation tunneling layers, with the potential to improve the performance of c-Si and other types of solar cells.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 1","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143117842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Infrared PbS Quantum Dot–Lead Halide Perovskite Combinations for Breaking the Shockley–Queisser Limit

IF 6 3区工程技术

Solar RRL Pub Date : 2024-11-22 DOI: 10.1002/solr.202400743

Yuhong Jiang, Yong Zhang, Jianghui Zheng, Yijun Gao, Chaoyu Xiang, Beining Dong, Chun-Ho Lin, Fandi Chen, Xinwei Guan, Xiaoning Li, Tao Wan, Tingting Mei, Shujuan Huang, Long Hu, Dewei Chu

{"title":"Infrared PbS Quantum Dot–Lead Halide Perovskite Combinations for Breaking the Shockley–Queisser Limit","authors":"Yuhong Jiang, Yong Zhang, Jianghui Zheng, Yijun Gao, Chaoyu Xiang, Beining Dong, Chun-Ho Lin, Fandi Chen, Xinwei Guan, Xiaoning Li, Tao Wan, Tingting Mei, Shujuan Huang, Long Hu, Dewei Chu","doi":"10.1002/solr.202400743","DOIUrl":"https://doi.org/10.1002/solr.202400743","url":null,"abstract":"Lead sulfide (PbS) quantum dots (QDs) and lead halide perovskites (LHPs) have emerged as highly promising materials for high-efficiency photovoltaics. PbS QDs offer size-dependent bandgaps in the infrared region and the potential for multiple exciton generation, while LHPs feature tunable bandgaps, high absorption coefficients, and long carrier diffusion lengths in the visible spectrum. This review focuses on two primary approaches to breaking the Shockley–Queisser (S–Q) limit based on the combinations of these two semiconducting materials: 1) monolithic 2-terminal tandem photovoltaics with complementary spectral absorption; and 2) intermediate-band solar cells (IBSCs) leveraging PbS QDs within a LHP matrix. Due to the ideally complementary spectrum of PbS and LHPs, emphasis is placed on the prevailing strategies for enhancing efficiency, addressing the major challenges in rational materials designs and device optimizations. Then, key obstacles including surface passivation, solvent compatibility, and the limited performance of small-bandgap PbS QD solar cells are analyzed, along with various potential solutions for tandem cells. For IBSCs, the evolution of materials and device architecture and the unique advantages of their combination are outlined in detail. Finally, this review provides a comprehensive outlook on future research directions to develop efficient tandem and IBSC devices for breaking the S–Q limit.","PeriodicalId":230,"journal":{"name":"Solar RRL","volume":"9 1","pages":""},"PeriodicalIF":6.0,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143117953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0