A.K.M.A. Islam, Md. Soyaeb Hasan, M. Islam, M. R. Kaysir, I. Mehedi
{"title":"Study of Ohmic Contact on p-InGaN Using MIGS Model","authors":"A.K.M.A. Islam, Md. Soyaeb Hasan, M. Islam, M. R. Kaysir, I. Mehedi","doi":"10.1109/ECACE.2019.8679389","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679389","url":null,"abstract":"The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for $mathbf{Au}/mathbf{NiO}(pmb{2} mathbf{nm})/mathbf{p-}mathbf{In}_{pmb{0.48}}mathbf{Ga}_{pmb{0.52}}mathbf{N}$ is found to be $pmb{2.35times 10^{-4} Omega-}mathbf{cm}^{pmb{2}}$ at 300K and $pmb{1.15times 10^{-4} Omega-}mathbf{cm}^{pmb{2}}$ at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as $pmb{1.9times 10^{-4}Omega-} mathbf{cm}^{pmb{2}}$ at 300K and $pmb{0.75times 10^{-4}Omega-}mathbf{cm}^{pmb{2}}$ at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"129 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114013030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Safial Islam Ayon, M. Akhand, S. A. Shahriyar, N. Siddique
{"title":"Spider Monkey Optimization to Solve Traveling Salesman Problem","authors":"Safial Islam Ayon, M. Akhand, S. A. Shahriyar, N. Siddique","doi":"10.1109/ECACE.2019.8679221","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679221","url":null,"abstract":"Traveling Salesman Problem (TSP) is the most well-known combinatorial optimization real-world problem. TSP is also very popular to check proficiency in any newly developed optimization method. In addition, the optimization methods, which are developed for other tasks (e. g., numerical optimization), also test their proficiency in TSP. This study investigates a new technique to solve TSP based on a recently developed optimization technique stimulated through the foraging conduct of spider monkeys. Standard Spider Monkey Optimization (SMO) is established for numerical optimization which has six phases and each one has a different purpose. In this study, SMO is modified and updated to solve TSP; and Swap Operators (SOs), and Swap Sequence (SS) are considered to adapt SMO for TSP. In the proposed method, each spider monkey is considered as a TSP solution and SS is considered to update the solution. SS is an arrangement of several SOs in which each one holds two particular positions of a solution that might be swapped to make a new solution. All SOs of a SS is applied on a specific tour maintaining order and thus ramifications of the SS change the TSP tour into another one. The SOs are generated using the experience of a specific spider monkey as well as the experience of other members (local leader, global leader, or randomly selected spider monkey) of the group. The proposed strategy has been examined on a huge number of benchmark TSPs and final consequences are compared to other prominent methods. SMO shows 11 best result out of 15 benchmark TSP problem compare to Ant Colony Optimization (ACO) and Velocity Tentative PSO (VTPSO). Experimental consequences show that the proposed strategy is a decent technique to solve TSP.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114396292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Use of High Flux Density Ferromagnetic Cores in Linear Generators for Oceanic Wave Energy Conversion","authors":"Selim Molla, Omar Farrok","doi":"10.1109/ECACE.2019.8679508","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679508","url":null,"abstract":"The traditional linear generators for generation of electricity from the oceanic wave energy are made of ordinary graded steel core which has much core loss. In this paper, minimization the core loss is proposed by using high grade magnetic cores in a direct drive linear generator. The simulation is obtained by considering DI-MAX HF-10X core and conventional iron core. The mathematical model is presented in detail. The current, voltage, power, mechanical force, magnetic flux linkage, density, and intensity of the proposed linear generator are presented in detail. From the simulation result, it is found that, the linear generator made of Armco DI-MAX HF-lOX has lower magnetic loss than that of using the conventional iron core. Therefore, DI-MAX HF-10X is proposed for the permanent magnet based linear generator.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126326297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Hasan, Kefayet Ullah, M. Hossain, T. Hossain, Nafis Farhan Rashid, Silvee Quraishi, P. Ghosh
{"title":"Metal Gate Work Function Engineering: Sub-Nano Regime Double Gate MOSFETs","authors":"M. Hasan, Kefayet Ullah, M. Hossain, T. Hossain, Nafis Farhan Rashid, Silvee Quraishi, P. Ghosh","doi":"10.1109/ECACE.2019.8679134","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679134","url":null,"abstract":"The effect of metal gate (MG) work function (WF) on MOSFETs having double gate has been researched for the next generation logic applications. GaN-based Double-Gate MOSFETs, by tuning the value of work functions (WF) are investigated by simulation to establish the transport characteristics to mitigate SCEs (short channel effects). The metal gate (MG) work functions (WF) is varied between 3.5 eV and 4.8 eV and the device performance is evaluated. The reduction of SCEs is observed for multiple metal gate (MG) work functions (WF). The simulation results apprise that by tuning the work function of GaN-based double-gate MOSFETs, the threshold voltage tuning can be possible. The reduction of short channel effects (SCEs) can be possible by fixing the congenial value of the threshold voltage (VT). The simulations have been performed for GaN-based DG-MOSFETs considering 9.7 nm (ITRS- Year: 2021) length of the gate (LG). The device turn on and turn off voltage (Gate-Source) is respectively, VGS =1 V and V GS= 0 V. The effective oxide thickness (EOT) is considered as 0.56 nm for a gate length of 9.7 nm. In the device simulation focus has been set on VTH, ION, IOFF, DIBL and SS, this metrics has been done for multiple metal gate work functions. The value of drain induced barrier lowering (DIBL) and subthreshold leakage current is reduced and threshold voltage (VT) is increased with tuning the metal gate work functions. The proposed GaN-based DG-MOSFETs suggests that the reduction of short channel effects (SCEs) can be possible by tuning the MG-WF (metal gate-work function).","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129327908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Autocorrelation Based Double Talk Detection System with an NLMS Aczostic Echo Canceler","authors":"D. Chowdhury, M. Sarkar, M. Z. Haider, G. Rabbi","doi":"10.1109/ECACE.2019.8679391","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679391","url":null,"abstract":"This paper presents an autocorrelation-based double talk detection (DTD) system with a modified normalized least mean squares (NLMS) adaptive filter algorithm for acoustic echo cancellation (AEC). Autocorrelation value of the residual error derived from the difference between the microphone signal and the echo estimation determines the existence of double talk in the speech signal. The algorithms for DTD and adaptive filter for AEC have been tested in terms of probability of missing detection, fraction of times of missing near-end signal and probability of false detection to verify the convergence of the echo canceler in the presence of a near-end signal. The proposed system has been simulated on MATLAB and an application code has been compiled for Xtensa DSP processor. The test results corroborate the reliability of the developed algorithms.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131285212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance Comparison of SMDG and DMDG XOI FET: An Analytical Study","authors":"S. M. Jahadun-Nobi, A. Z. M. Taiyer, M. Islam","doi":"10.1109/ECACE.2019.8679297","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679297","url":null,"abstract":"In this paper, the performance of dual material double-gate (DMDG) III-V-on-insulator field effect transistor (XOI FET) is studied using an analytical compact model developed by solving 2D Poisson equation. Based on the model, the surface potential, electric field, threshold voltage, DIBL, and drain current profile are estimated for DMDG structure and compared with that of single material double-gate (SMDG) structure. The steeper change in surface potential profile at the gate materials interface demonstrates better suppression of short channel effects in case of DMDG structure than SMDG structure. The reduction of peak electric field as a function of gate materials work function difference indicates that the impact of hot electron effects can be controlled for DMDG structure with respect to SMDG structure. The results of threshold voltage, drain induced barrier lowering (DIBL), and drain current suggest that the DMDG device structure outperforms compared to conventional SMDG device structure.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"65 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113938311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Subthreshold Characteristics of DMDG XOI FinFET","authors":"Md.Shafiul Islam, M. M. Islam, M. Islam","doi":"10.1109/ECACE.2019.8679510","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679510","url":null,"abstract":"Double gate (DG) MOSFETs are one of the most indispensable devices in semiconductor industry. But, with scaling short-channel effects (SCEs) become very much problematic for the proper operation of the devices in subnanometer regime. To alleviate these SCEs, underlap dual-material (DM) DG III-Von insulator FinFET is proposed here. This structure offers the advantages of an underlap concept along with the merits of using compound semiconductor materials in the channel. Here two-dimensional Poisson's equation is solved to develop the mathematical models of surface potential and subthreshold current of the device. To ensure faster logic operations Ino.3Gao.7Sb is used in the channel. The results of the proposed device structure are evaluated in terms of surface potential, subthreshold current, subthreshold swing, drain-induced barrier lowering, and Ion/IOff ratio. It is observed that, the gate underlap length as well as gate metals work-function difference have strong impact on the reduction of subthreshold current and surface potential profile, and hence on suppression of SCEs of the device.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122399439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Looking Behind the Mask: A framework for Detecting Character Assassination via Troll Comments on Social media using Psycholinguistic Tools","authors":"A. Marouf, Rasif Ajwad, Adnan Ferdous Ashrafi","doi":"10.1109/ECACE.2019.8679154","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679154","url":null,"abstract":"With the facilities of social media platforms like Facebook, Twitter, Google+, YouTube etc. people are capable of expressing their views & news, sharing moments via photos, liking, commenting and sharing others posts. The online social networks (OSNs) are not only giving positive supports to its users, but also creating opportunities to assassin personals by the trolls. Trolls are usually the OSN users who try to hide themselves while doing bad comments, false accusations, starting controversies, spreading fake news or rumors which could be considered as character assassination of individuals. The online behavior of an OSN user could be tracked via his/her digital footprints. Though tracking huge number of users who are generating billions of textual and image data every day, could be considered as a challenging task. In this paper, we have proposed a novel detection system for identifying character assassination from social media platforms. The proposed method first predicts the personality traits using users' textual data. Therefore, LIWC, SlangNet, SentiWordNet, SentiStrength, Colloquial WordNet has been utilized as psycholinguistic tool. LIWC-based feature engineering has been performed on the comments of the trolls as well as the victim user. SlangNet and Colloquial WordNet is used for detecting English slang words in the comments as it is evident that slangs are the basic communicative way to defame someone.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123000428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Detection of fake online reviews using semi-supervised and supervised learning","authors":"Rakibul Hassan, M. Islam","doi":"10.1109/ECACE.2019.8679186","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679186","url":null,"abstract":"Online reviews have great impact on today's business and commerce. Decision making for purchase of online products mostly depends on reviews given by the users. Hence, opportunistic individuals or groups try to manipulate product reviews for their own interests. This paper introduces some semi-supervised and supervised text mining models to detect fake online reviews as well as compares the efficiency of both techniques on dataset containing hotel reviews.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"215 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123040402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Prediction of possible asthma attack from air pollutants: Towards a high density air pollution map for smart cities to improve living","authors":"Md. Nazmul Hoq, Rakibul Alam, Ashraful Amin","doi":"10.1109/ECACE.2019.8679335","DOIUrl":"https://doi.org/10.1109/ECACE.2019.8679335","url":null,"abstract":"Asthma is a chronic, often devastating, condition that has no cure and causes a remarkable economic burden to the associated family as well as to the government and state. But it can be controlled and managed with personal diagnostic of triggering factors of asthma and through preventive care. Sometimes it is as simple as avoiding air pollutants like dust, tobacco smoke etc. Asthma attack triggered from air pollution could easily be avoided if there is a way to monitor air pollution level continuously in the surroundings. In this paper, we have presented a system that will be able to predict possible asthma attack for individuals and alert them. The system is developed using an air pollutant monitoring device combined with an Android application. Using supervised learning technique and analyzing (frequently taken) air pollutant data, the system will help to reduce asthma attacks for asthma patients. Also analyzing personalized data of individuals it will be possible to recommend a new user about the safe and unsafe zone of the city. As a by-product, it will be possible to create a high-density air pollution map of cities to monitor air pollution.","PeriodicalId":226060,"journal":{"name":"2019 International Conference on Electrical, Computer and Communication Engineering (ECCE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124023023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}