Subthreshold Characteristics of DMDG XOI FinFET

Double gate (DG) MOSFETs are one of the most indispensable devices in semiconductor industry. But, with scaling short-channel effects (SCEs) become very much problematic for the proper operation of the devices in subnanometer regime. To alleviate these SCEs, underlap dual-material (DM) DG III-Von insulator FinFET is proposed here. This structure offers the advantages of an underlap concept along with the merits of using compound semiconductor materials in the channel. Here two-dimensional Poisson's equation is solved to develop the mathematical models of surface potential and subthreshold current of the device. To ensure faster logic operations Ino.3Gao.7Sb is used in the channel. The results of the proposed device structure are evaluated in terms of surface potential, subthreshold current, subthreshold swing, drain-induced barrier lowering, and Ion/IOff ratio. It is observed that, the gate underlap length as well as gate metals work-function difference have strong impact on the reduction of subthreshold current and surface potential profile, and hence on suppression of SCEs of the device.