{"title":"Class AB power amplifier advanced design techniques","authors":"F. Giannini, G. Leuzzi, E. Limiti","doi":"10.1109/SBMOMO.1995.509646","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509646","url":null,"abstract":"Relevant existing design procedures for microwave class-AB power amplifiers are briefly reviewed and discussed, focusing on their field of application and relative strength or drawbacks. Both simplified and accurate nonlinear methodologies are addressed.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128902261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Carrier recombination in single and double heterojunction bipolar transistors","authors":"S. J. Spiegel","doi":"10.1109/SBMOMO.1995.509713","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509713","url":null,"abstract":"Carrier recombination in single and double abrupt bipolar transistors (HBTs) is analysed. The numerical results performed on InP based structures show that the recombination rate in the neutral base of double abrupt HBTs is higher than in single abrupt HBTs owing to the electron confinement in the base region.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115759022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Pro's and con's of TDMA and CDMA for digital cellular networks","authors":"W. Heger, W. Mohr","doi":"10.1109/SBMOMO.1995.509719","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509719","url":null,"abstract":"The main differences of today's TDMA (the GSM system family) and CDMA systems (the IS-95 CDMA) and their relative performance are shown. Technical features like frequency hopping, hand-off, hierarchical cell structures, power control, voice activity detection, equalization and RAKE reception are discussed. The speech coder is shown as the most essential part of a system in terms of quality and capacity. A comparison between the two systems is made for the important parameters of range and capacity from the network operators point of view.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117290813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High temperature superconducting microstrip resonators for the measurement of films made by pyrolysis","authors":"M. T. de Melo, M. Lancaster, H. Yokota, C. Gough","doi":"10.1109/SBMOMO.1995.509729","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509729","url":null,"abstract":"Microwave surface impedance measurements are reported for textured granular YBCO films made by a novel spray pyrolysis method on the surface of a YSZ substrate. A parallel plate resonator was formed by placing the film and substrate on top of a copper ground plane. Microwave measurements were made at nitrogen temperatures on the fundamental mode at /spl sim/4.7 GHz. A model has been developed to extract the penetration depth and impedance of the finite thickness granular film. We obtain values for penetration depth /spl lambda//sub g//spl sim/3.6 /spl mu/m and, using independent measurements of the critical current and grain size, a surface resistance R/sub g//spl sim/13 m/spl Omega/.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123570553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Capacity comparison between the GSM mobile radio system and a CDMA-based one","authors":"F. Muratore, G. Romano","doi":"10.1109/SBMOMO.1995.509651","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509651","url":null,"abstract":"Performance comparisons between the European mobile radio system, GSM, and one with a DS-CDMA access technique, based on the IS 95 Standard, are carried out in terms of link budgets and capacity evaluations. The same working conditions and the same cellular coverage have been adopted with the aim of performing significant comparison between the two systems. In particular, the performance has been evaluated in outdoor urban and quasi-open rural environments, under the hypothesis that the mobile terminals transmit with the same mean power.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125800575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Thermal-time response measurement of a distributed feedback laser using coherent reflectometry","authors":"A. Saavedra, J.P. von der Weld, R. Passy","doi":"10.1109/SBMOMO.1995.509686","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509686","url":null,"abstract":"The thermal behavior of distributed feedback semiconductor lasers, with two different structures, was investigated by using a coherent reflectometry system. The thermal-time responses were estimated for step modulated laser operation and it was possible to analyze the influence of the package on the total response, this is an important limitation in the linearity of optical frequency sweep in optical frequency domain reflectometry. The influence of the amplitude and frequency modulation was also investigated.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132884564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Delayed self homodyne measurements of AM and FM response of modulated multisection diode lasers","authors":"J. P. von der Weid, R. Passy","doi":"10.1109/SBMOMO.1995.509737","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509737","url":null,"abstract":"The delayed self homodyne technique was applied to the measurement of the FM response of modulated multisection lasers over a wide frequency range. The AM was observed simultaneously to the FM measurements. A theoretical description of the power spectra measured by the delayed self homodyne is presented. The experimental results using a three section DFB laser are in good agreement with the theoretical model. The distortion of the FM spectrum produced by the IM is also discussed.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126908111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improving holographic storage in LiNbO/sub 3/ crystals","authors":"J. Frejlich, P. M. Garcia, A. A. Freschi","doi":"10.1109/SBMOMO.1995.509662","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509662","url":null,"abstract":"We show that the use of actively stabilized holographic recording improves the performance of LiNbO/sub 3/ photorefractive crystals as optical storage media. Reproducible and highly efficient holograms are obtained in this way, even in the presence of rather weak recording beams and low modulated images. Experimental results are reported using an Fe-doped crystal and a 514.5 nm wavelength illumination.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113965892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The photoresponse of microwave HEMTs: semi-analytical modeling","authors":"M. Romero, M.A.G. Martinez, P. Herczfeld","doi":"10.1109/SBMOMO.1995.509710","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509710","url":null,"abstract":"This paper is concerned with the response of HEMTs transistors to optical excitation. An experimental evaluation was conducted and a model was developed. The results indicate that the dominant photodetection mechanism is the internal photovoltaic effect (backgating), caused by the accumulation of photogenerated holes in the GaAs buffer layer. Accordingly, the effect of illumination is equivalent to a shift in the gate to source bias point and characterized by a nonlinear photocurrent-optical power relationship. The device exhibits an extremely high quantum efficiency at low optical intensities, but the bandwidth is limited to the MHz range. It is suggested that an additional terminal at the substrate would increase the bandwidth while retaining significant gain over conventional photodiodes.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134382837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Characterization of directional coupler-based optical guided-wave devices","authors":"T. Wongcharoen, B. Rahman, K. Grattan","doi":"10.1109/SBMOMO.1995.509614","DOIUrl":"https://doi.org/10.1109/SBMOMO.1995.509614","url":null,"abstract":"The accurate characterization of directional coupler-based photonic devices is presented using the coupled mode and the least squares boundary residual approaches along with the finite element method. Results are obtained showing the power transfer ratio between such coupled waveguides, and compare favourably with those of published data.","PeriodicalId":225072,"journal":{"name":"Proceedings of 1995 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference","volume":"78 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131673224","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}