The Japan Society of Applied Physics最新文献

{"title":"Low Power UWB CMOS LNA using Resistive Feedback and Current-Reused Techniques","authors":"J. Guo","doi":"10.7567/ssdm.2017.ps-5-08","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-5-08","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"396 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78041826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of optical and photoelectric properties of a new boron-based organic semiconductor in the near-infrared regions","authors":"R. Fujioka, Tatsuya Fukushima, Y. Koshiba, K. Ishida","doi":"10.7567/ssdm.2017.ps-10-07","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-07","url":null,"abstract":"Optical and photoelectric properties, especially in near infrared ray (NIR) region, of dibenzopyrromethane boron chelate derivatives (BODIPY-Ph) were investigated. The BODIPY-Ph vacuum-evaporated thin films showed broad-band absorption in the wavelength rang of 600-1000 nm with the peak at 770 nm. The NIR organic photodetector (OPD) fabricated with BODIPY-Ph exhibited photocurrent of 2.18×10 -3 mA/cm 2 at 1.5 V under 800 nm irradiation. This value was about 700 times higher than dark current at the same voltage. These results suggest that BODIPY-Ph is one of the promising candidates for use in NIR-OPDs.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79465652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Semiconductor Industry: Changed and Unchanged","authors":"T. Higashi","doi":"10.7567/ssdm.2017.pl-1-01","DOIUrl":"https://doi.org/10.7567/ssdm.2017.pl-1-01","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88187654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrafast Carrier Dynamics in Perovskite Solar Cells under Light Irradiation","authors":"J. X. Li","doi":"10.7567/SSDM.2017.PS-15-11","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-11","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75910007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Oxygen plasma treatment for wettability improvement of alkyl terminal self-assembled monolayer as gate dielectrics","authors":"K. Kuribara","doi":"10.7567/SSDM.2017.PS-10-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-10-03","url":null,"abstract":"We have improved wettability on alkyl self-assembled monolayer (SAM) with oxygen plasma treatment. Momentary plasma treatment onto gate dielectric surface causes threshold voltage shift of about 1 V and 50 % degradation of mobility. On the other hand, after long-time plasma treatment for 90 s, threshold voltage returns to almost initial value of -0.3 V. TFT with plasma treatment works within low operation voltage of 2.5V with mobility of 0.06 cm/Vs. Wettability of gate insulator surface is improved by plasma, and a TFT using drop cast semiconductor on lyophilic insulator surface shows mobility of 0.003 cm/Vs at 2.5 V.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"114 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84869150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on Nitride Semiconductors from the Dawn, through the Present, to the Future","authors":"T. Matsuoka","doi":"10.7567/ssdm.2017.pl-2-02","DOIUrl":"https://doi.org/10.7567/ssdm.2017.pl-2-02","url":null,"abstract":"The history of the birth of a blue LED consisted of nitride semiconductors, and the effect in the energy saving by solid state lighting are described. By taking advantage of the characteristics of nitride semiconductors with wide band-gap, the development of the high frequency and the high power transistors are also intro-","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"157 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81728656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 0.45-to-1.8 GHz Fully Synthesized Injection Locked Bang-Bang PLL with OFDAC to Enhance DCO resolution","authors":"J. Yang","doi":"10.7567/SSDM.2017.PS-5-07","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-07","url":null,"abstract":"This paper presents a fully synthesized injection locked bang-bang phased-locked loop (SILBBPLL) with ultrafine DCO resolution. A novel ultra-fine frequency tuning block is proposed to improve the DCO resolution. A standard cell based output feedback DAC (OFDAC) is adopted for the ultra-fine frequency tuning. The proposed SILBBPLL is described in hardware language and automatically placed & routed by using standard digital circuit design flow. It is implemented in 65 nm CMOS with an active area of 0.008 mm. The measured results show that power consumption of the SILBBPLL operating at 1.5 GHz is 1.8 mW @0.8V. The integrated root-mean-square (RMS) jitter is equal to 0.91 ps. The SILBBPLL achieves a figure-ofmerit (FOMa) of -259.1 dB.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"110 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75976384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Polymer light-emitting diodes operating in ultraviolet region containing carrier-transporting materials in active layers","authors":"M. Takahashi, N. Ohtani","doi":"10.7567/ssdm.2017.ps-10-04","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-04","url":null,"abstract":"We fabricated polymer light-emitting diodes (PLEDs) operating in the ultraviolet (UV) region by a wet-process. The samples consisted of simple bilayer structures. In particular, the electronand hole-transporting materials were doped in the active layers to improve the carrier injection into the active layer. We observed a peaking wavelength of 389 nm was observed in the electroluminescence (EL) spectrum. In addition, the maximum external quantum efficiency was 1.8%.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"57 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88147218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 2.4 – 3.2 GHz Robust Self-Injecting Injection-Locked PLL","authors":"Jie Yang, Zhongwei Zhang, Liyuan Liu, Jing Liu, N. Wu","doi":"10.7567/SSDM.2017.PS-5-06","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-06","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78654666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of Single-Crystalline Thin-Film Utilizing Liquid-Crystalline Alkyl-Substituted Phthalocyanine","authors":"A. Fujii, Takahiro Kitagawa, Yusaku Anzai, M. Nakatani, Masashi Ohmori, H. Kajii, M. Ozaki","doi":"10.7567/ssdm.2017.ps-10-01","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-01","url":null,"abstract":"Fabrication of single crystalline thin films utilizing an organic semiconductor material, liquid crystalline (LC) phthalocyanine, 1,4,8,11,15,18,22,25-octahexylphthalocyanine (C6PcH2), which demonstrates a high ambipolar mobility and is promising as a donor material for organic solar cells, have been carried out. Three fabrication methods have been proposed by taking the thermotropic LC properties, lyotropic LC properties or crystal polymorphism into consideration, the optical and electrical properties of the single crystalline thin film have been investigated, and the crystal growth mechanisms have been discussed. Fig. 1 Molecular structure of C6PcH2 1. Solvent vapor effects based on solution-mediated polymorphic transformation Solvent vapor treatment to spin-coated films of a polymorphic C6PcH2, the molecular structure of which is shown in Fig. 1, was effective for the solution-mediated polymorphic transformation [1-3]. Growth of the single crystalline films via redissolving organic films under solvent vapor was revealed by in-situ microscopic observations of the films as shown in Fig. 6. Fig. 2 Polarizing micrographs of film. (b) was taken 10 min after the state of (a). The X-ray diffraction measurement of the films after exposing to solvent vapor indicated the phase transition between the polymorphs. The crystal growth axis was clarified by measuring the crystal orientation in the grown monodomain film. The mechanism of the crystal growth based on the solution-mediated polymorphic transformation was discussed in terms of the different solubility for each crystal phase. 2. Uniaxially oriented film growth by bar-coating technique Bar-coating technique, which is a simple solution process, has been adopted as the second method for the uniaxially oriented thin films of C6PcH2 [4]. The molecular orientation and molecular steps in the thin film were observed by polarized spectroscopy and atomic force microscopy, respectively. Fig. 3 (a) Polarized absorption spectra of the bar-coating film. The incident light was parallel (black line) or perpendicular (red line) to the film growth direction. (b) AFM image and surface profile of the bar-coating film. The profile corresponds to the white line in the image. The three-dimensional molecular packing structure in the thin film was investigated by the grazing incidence wide-angle X-ray scattering technique with in-plane sample rotation. The measured X-ray diffraction patterns were reproduced by a simulation based on the lattice parameters of the C6PcH2 single crystal. The three-dimensional molecular packing structure of the thin film was found to match the single crystal structure. 3. Crystal growth utilizing freeze process from supercooled LC state The third method has been proposed for the uniaxial crystal growth after the wet-processed fabrication of the C6PcH2 PS-10-01 Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials, Sendai, 2017, pp923-924","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84430179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}