Oxygen plasma treatment for wettability improvement of alkyl terminal self-assembled monolayer as gate dielectrics

Abstract

We have improved wettability on alkyl self-assembled monolayer (SAM) with oxygen plasma treatment. Momentary plasma treatment onto gate dielectric surface causes threshold voltage shift of about 1 V and 50 % degradation of mobility. On the other hand, after long-time plasma treatment for 90 s, threshold voltage returns to almost initial value of -0.3 V. TFT with plasma treatment works within low operation voltage of 2.5V with mobility of 0.06 cm/Vs. Wettability of gate insulator surface is improved by plasma, and a TFT using drop cast semiconductor on lyophilic insulator surface shows mobility of 0.003 cm/Vs at 2.5 V.