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Temperature Sensors with Negative and Positive Temperature Coefficients by Using Cascoded Diode-connected Sub-threshold NMOSFETs and PMOSFETs 采用级联编码二极管连接亚阈值nmosfet和pmosfet的负和正温度系数温度传感器
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-5-03
R. L. Wang, K.-B. Lee, C. Tsai, L.-W. Wang, Y.-Y. Lin, H. Chen, Y. Chuang, H. Liao, H. Tsai, Y. Juang
{"title":"Temperature Sensors with Negative and Positive Temperature Coefficients by Using Cascoded Diode-connected Sub-threshold NMOSFETs and PMOSFETs","authors":"R. L. Wang, K.-B. Lee, C. Tsai, L.-W. Wang, Y.-Y. Lin, H. Chen, Y. Chuang, H. Liao, H. Tsai, Y. Juang","doi":"10.7567/SSDM.2017.PS-5-03","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-03","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83231410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of optical absorbing layer thickness on measurement accuracy in inverted structure organic position-sensitive detectors 光学吸收层厚度对倒置结构有机位置敏感探测器测量精度的影响
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/ssdm.2017.ps-10-10
T. Morimune
{"title":"The influence of optical absorbing layer thickness on measurement accuracy in inverted structure organic position-sensitive detectors","authors":"T. Morimune","doi":"10.7567/ssdm.2017.ps-10-10","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-10","url":null,"abstract":"The influence of the organic optical absorbing thickness on measurement accuracy is investigated in one-dimensional organic-sensitive detectors using Al doped ZnO resistive layer. The linearity has been increased as the optical absorbing layer becomes thicker and the maximum measurement error has been improved by increasing the sensitivity of the active layer.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78489259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Cyclic Switched-Capacitor Step-Down DC-DC Regulator with Enhanced Output Current 具有增强输出电流的循环开关电容降压DC-DC稳压器
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-5-05
W.-L. Wang, Hongchin Lin, C.-L. Yu
{"title":"A Cyclic Switched-Capacitor Step-Down DC-DC Regulator with Enhanced Output Current","authors":"W.-L. Wang, Hongchin Lin, C.-L. Yu","doi":"10.7567/SSDM.2017.PS-5-05","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"139 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90674552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Antimony based Perovskite Materials for Photovoltaic Applications 光伏应用的锑基钙钛矿材料
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-15-09
K. Boopathi
{"title":"Antimony based Perovskite Materials for Photovoltaic Applications","authors":"K. Boopathi","doi":"10.7567/SSDM.2017.PS-15-09","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-09","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85810072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Dynamic Characteristics of SiC SBD at High Switching Frequency Based on Junction Capacitance 基于结电容的SiC SBD高开关频率动态特性分析
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-5-04
R. Maeda, T. Okuda, T. Hikihara
{"title":"Analysis of Dynamic Characteristics of SiC SBD at High Switching Frequency Based on Junction Capacitance","authors":"R. Maeda, T. Okuda, T. Hikihara","doi":"10.7567/SSDM.2017.PS-5-04","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-04","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"61 6","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91486003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET 高压退火对FDSOI隧道场效应管可靠性的影响
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/ssdm.2017.ps-1-05
S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee
{"title":"Effect of High Pressure Annealing on the Reliability of FDSOI Tunneling FET","authors":"S. Kang, D. Lim, S. Lim, J. Noh, S.Mulmargǒnde Kim, S. K. Lee, C.-J. Choi, Byoungho Lee","doi":"10.7567/ssdm.2017.ps-1-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-1-05","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"411 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79920579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoelectronic Properties of Thiophene-Vinylene Derivatives with Phthalimide Groups in Both Terminals 两端含邻苯二胺基的噻吩-乙烯基衍生物的光电子性质
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/ssdm.2017.ps-10-05
H. Mochizuki, H. Tachibana
{"title":"Photoelectronic Properties of Thiophene-Vinylene Derivatives with Phthalimide Groups in Both Terminals","authors":"H. Mochizuki, H. Tachibana","doi":"10.7567/ssdm.2017.ps-10-05","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-10-05","url":null,"abstract":"We synthesized two novel thiophene-vinylene derivatives with phthalimide groups in both terminals. Thiophene-vinylene skeleton was effective to increase IP and to decrease optical band gap, meanwhile, introduction of phthalimide groups lowered ionization potential value (IP), meanwhile, thiophene-vinylene was effective to increase IP and to decrease optical band gap.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85475202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sensor assembly method using Si-interposer with trenches for 3-D binocular range sensors 三维双目距离传感器的硅衬垫沟槽装配方法
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-5-02
K. Nakajima
{"title":"Sensor assembly method using Si-interposer with trenches for 3-D binocular range sensors","authors":"K. Nakajima","doi":"10.7567/SSDM.2017.PS-5-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-5-02","url":null,"abstract":"We devised an alignment method of two image sensors using a Si-interposer with trenches. The trench was formed using deep-reactive ion etching (RIE) equipment. We produced the 3-D range sensor using the method in our experiment and confirmed that sufficient alignment accuracy was realized.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87794050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky Barrier Heights of Metal Silicides on Si and Ge 金属硅化物在Si和Ge上的肖特基势垒高度
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/ssdm.2017.ps-1-01
J. Robertson, H. Li
{"title":"Schottky Barrier Heights of Metal Silicides on Si and Ge","authors":"J. Robertson, H. Li","doi":"10.7567/ssdm.2017.ps-1-01","DOIUrl":"https://doi.org/10.7567/ssdm.2017.ps-1-01","url":null,"abstract":"","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87378034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Formation of Perfect Superlattice with Aligned Plane Orientation of Colloidal PbS Quantum Dots 胶体PbS量子点平面取向排列的完美超晶格的形成
The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI: 10.7567/SSDM.2017.PS-15-02
S. Fujimoto, F. Suetsugu, K. Mukai
{"title":"Formation of Perfect Superlattice with Aligned Plane Orientation of Colloidal PbS Quantum Dots","authors":"S. Fujimoto, F. Suetsugu, K. Mukai","doi":"10.7567/SSDM.2017.PS-15-02","DOIUrl":"https://doi.org/10.7567/SSDM.2017.PS-15-02","url":null,"abstract":"We investigated the method to form a perfect quantum dot (QD) superlattice, in which each QD has the same plane orientation, by the deposition of colloidal PbS QDs with clear facets in solution. QD facets were controlled by synthesis temperature. We found that the slower the deposition, the better the orientation alignment of QDs. The energy conversion efficiency of solar cell is expected to be improved with perfect QD superlattice by its high carrier mobility in intermediate bands.","PeriodicalId":22504,"journal":{"name":"The Japan Society of Applied Physics","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89314133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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