两端含邻苯二胺基的噻吩-乙烯基衍生物的光电子性质

The Japan Society of Applied Physics Pub Date : 2017-09-12 DOI:10.7567/ssdm.2017.ps-10-05

H. Mochizuki, H. Tachibana

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引用次数: 0

摘要

我们合成了两个新型的邻苯二甲酸亚胺基噻吩-乙烯基衍生物。噻吩-乙烯基骨架能有效提高电离电位，减小光学带隙，同时引入邻苯亚胺基团能降低电离电位，同时噻吩-乙烯基能有效提高电离电位，减小光学带隙。

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Photoelectronic Properties of Thiophene-Vinylene Derivatives with Phthalimide Groups in Both Terminals

We synthesized two novel thiophene-vinylene derivatives with phthalimide groups in both terminals. Thiophene-vinylene skeleton was effective to increase IP and to decrease optical band gap, meanwhile, introduction of phthalimide groups lowered ionization potential value (IP), meanwhile, thiophene-vinylene was effective to increase IP and to decrease optical band gap.

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The Japan Society of Applied Physics

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