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Thermoelectric investigation on Mg3N2 monolayer Mg3N2单层的热电性质研究
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0017733
K. Rajput, D. R. Roy
{"title":"Thermoelectric investigation on Mg3N2 monolayer","authors":"K. Rajput, D. R. Roy","doi":"10.1063/5.0017733","DOIUrl":"https://doi.org/10.1063/5.0017733","url":null,"abstract":"The present work reports the investigation on electronic and thermoelectric properties of hexagonal monolayer Mg3N2. To study the geometrical, electronic and thermoelectric properties, we have utilized the first principle study within the frame work of density functional theory (DFT). The electronic properties are obtained in terms of the electronic band-structure and projected density of state (PDOS), which shows that the monolayer Mg3N2 lies in semiconductor regime with 0.91 eV direct energy bandgap. We also have obtained various thermoelectric properties like thermoelectric power (Seebeck coefficient), thermal and electrical conductivities and finally the figure of merit (ZT) by utilizing the semi-classical Boltzmann transport equations (BTE).","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122034695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anisotropic gilbert damping in B2 ordered full Heusler alloy Co2MnAl thin films B2有序全Heusler合金Co2MnAl薄膜的各向异性吉尔伯特阻尼
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0017134
Vineet Barwal, N. K. Gupta, Soumyarup Hait, S. Husain, Nilamani Behera, S. Chaudhary
{"title":"Anisotropic gilbert damping in B2 ordered full Heusler alloy Co2MnAl thin films","authors":"Vineet Barwal, N. K. Gupta, Soumyarup Hait, S. Husain, Nilamani Behera, S. Chaudhary","doi":"10.1063/5.0017134","DOIUrl":"https://doi.org/10.1063/5.0017134","url":null,"abstract":"Structural and dynamic magnetization properties of Co2MnAl (CMA) full Heusler alloy thin films grown on Si (100) substrate at different substrate temperatures (Ts) 30°C, 200°C, 300°C, 400°C and 500°C are investigated. XRD patterns revealed the formation of B2 partially ordered phase at Ts=200°C and above. Ferromagnetic Resonance (FMR) technique have been used to determine the damping constant (α), resonance field (Hr) and line width (ΔH) of recorded spectra and fitted by using Landau-Lifshitz-Gilbert (LLG) equation. The lowest damping constant was found to be 0.007±0.002 for the film grown at Ts=200°C. Films exhibit uniaxial magnetic anisotropy. Anisotropic damping constant α is calculated along the easy and hard axis. Along the two directions remarkable change (almost ∼59%) in α is observed.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124649361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of synthesis methods on structural, piezoelectric, ferroelectric and mechanical properties of lead-free K0.5Na0.5NbO3 (KNN) ceramics 合成方法对无铅K0.5Na0.5NbO3 (KNN)陶瓷结构、压电、铁电和力学性能的影响
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0017271
Mahfooz Alam, Sukhamoy Khilari, K. Shree, D. Das
{"title":"Influence of synthesis methods on structural, piezoelectric, ferroelectric and mechanical properties of lead-free K0.5Na0.5NbO3 (KNN) ceramics","authors":"Mahfooz Alam, Sukhamoy Khilari, K. Shree, D. Das","doi":"10.1063/5.0017271","DOIUrl":"https://doi.org/10.1063/5.0017271","url":null,"abstract":"In this work lead free perovskite ferroelectric ceramics, K0.5Na0.5NbO3 (KNN), has been synthesized by two different methods, conventional solid state (SS) and co-precipitation (CPP), from the same starting materials, Nb2O5, Na2CO3 and K2CO3 and their properties have been compared. Double calcination, 700 °C for 7h followed by 850 °C for 6h, of the co-precipitation precursor resulted in single phase perovskite structure (JCPDS card No. 01-077-0038), whereas for solid state precursor a triple calcination, 850 °C for 5h, 1000 °C for 5h followed by 1050 °C for 5h, ended up with producing the cubic perovskite KNN phase. Both samples were sintered at 1120 °C for 2h under atmospheric condition in a muffle furnace. FESEM is used to find the microstructural features. Energy dispersive X-ray spectroscopy is used to confirm the chemical composition of the samples. Evolution of the phase structure and variation in Curie temperature, dielectric constant, piezoelectric voltage coefficient (g33), piezoelectric charge coefficient (d33) as well as mechanical properties such as hardness, stiffnesshave been studied and compared for the KNN samples prepared by two different synthesis methods.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132104256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of aspect ratio on the photoanodic behaviour of titanium dioxide nanorods array 宽高比对二氧化钛纳米棒阵列光阳极行为的影响
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0016768
J KethzyAgnes, S. Wincy, S. Padmaja, E. M. Arnold, B. Emmanuel, K. Pugazhendhi, J. Shyla
{"title":"Impact of aspect ratio on the photoanodic behaviour of titanium dioxide nanorods array","authors":"J KethzyAgnes, S. Wincy, S. Padmaja, E. M. Arnold, B. Emmanuel, K. Pugazhendhi, J. Shyla","doi":"10.1063/5.0016768","DOIUrl":"https://doi.org/10.1063/5.0016768","url":null,"abstract":"We report herein the growth Titanium Dioxide (TiO2) nanorods on FTO substrate with different aspect ratio. It is observed that the photo anodic behaviour is highly influenced by the aspect ratio of as -grown TiO2 nanorods. Hydrolysis of TiCl4 leads to the formation of TiO2 nanorods on FTO substrate. Nanorods of different aspect ratio are obtained by varying the concentration (0.1M, 0.2M) of TiCl4. The XRD pattern confirms the formation of rutile, tetragonal TiO2 nanorods with high crystallinity. From the FESEM images, the length and width of the nanorods are observed. The aspect ratio is found to be 151 for low concentration TiO2 nanorod array (TR1) and 330 for high concentration TiO2 nanorod array (TR2). The specific surface area, porosity of the samples was calculated using Brunauer–Emmett–Teller (BET) analysis. Superior surface properties are noticed in the case of TiO2 nanorods with high aspect ratio. The photovoltaic activity of TiO2 nanorods with high aspect ratio is found to be relatively high as compared to those with low aspect ratio.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131729284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dextrose assisted sol-gel auto combustion synthesis and magnetic characterizations of cobalt ferrite nanoparticles 葡萄糖辅助溶胶-凝胶自燃烧合成钴铁氧体纳米颗粒及其磁性表征
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0017310
V. Bhagwat, M. V. Khedkar, G. Kulkarni, Prashant B. Kharat, K. M. Jadhav
{"title":"Dextrose assisted sol-gel auto combustion synthesis and magnetic characterizations of cobalt ferrite nanoparticles","authors":"V. Bhagwat, M. V. Khedkar, G. Kulkarni, Prashant B. Kharat, K. M. Jadhav","doi":"10.1063/5.0017310","DOIUrl":"https://doi.org/10.1063/5.0017310","url":null,"abstract":"The nanocrystalline cobalt ferrite (CoFe2O4) was successfully synthesized by dextrose assisted sol-gel auto combustion method. The structural, morphological and magnetic properties of prepared sample were studied using standard technique. Pure phase formation of cobalt ferrite without additional impurity was observed in X-ray diffraction pattern. The average crystallite size (t = 20.6 nm), lattice parameter (a = 8.38 A) and other structural parameters were calculated from XRD data. The SEM image shows good homogeneity and sponge like morphology of the prepared sample with average grain size of 69.8 nm. The presence of the peak around 608 cm−1 and 415 cm−1 in IR spectrum confirmed that the formed product is spinel ferrite. The values of saturation magnetization (Ms) and remanent magnetization (Mr) were obtained from M-H curve and found to be 74.5 emu/gm and 44.1 emu/gm respectively. Thus, it is observed from experimental results that dextrose can be used as a fuel for synthesis of cobalt ferrite nanoparticles with smaller size particles and improved magnetic properties for various technological applications.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133011021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of silicon thickness on the performance of conventional junctionless field effect transistor 硅厚度对传统无结场效应晶体管性能的影响
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0016988
M. Agarwal, V. Narula
{"title":"Effect of silicon thickness on the performance of conventional junctionless field effect transistor","authors":"M. Agarwal, V. Narula","doi":"10.1063/5.0016988","DOIUrl":"https://doi.org/10.1063/5.0016988","url":null,"abstract":"The performance of N-type double gate junctionless Field Effect Transistor(JLFET) at different silicon thickness is studied using TCAD simulations. The performance of the device is highly dependent on silicon thickness. The different parameters like ON current, OFF current, ON/OFF current ratio, Subthreshold Slope(SS) and threshold Voltage has been studied at different silicon thickness varied from 6nm to 12nm. It is observed from the simulations that with the increase in silicon thickness the device performance has degraded. The best performance parameters are obtained when the silicon thickness is 6nm. This paper also demonstrates the correlation between the gate work function and the silicon thickness for better device performance. Further, an improvement in the performance parameters even on increasing the silicon thickness has been observed on increasing the work function of the gate material.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131354347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Signatures of weak spin-phonon coupling in 12R-BaTi0.4Mn0.6O3: A Raman study 12R-BaTi0.4Mn0.6O3中弱自旋声子耦合特征的拉曼研究
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0016711
B. Poojitha, Anjali Rathore, S. Saha
{"title":"Signatures of weak spin-phonon coupling in 12R-BaTi0.4Mn0.6O3: A Raman study","authors":"B. Poojitha, Anjali Rathore, S. Saha","doi":"10.1063/5.0016711","DOIUrl":"https://doi.org/10.1063/5.0016711","url":null,"abstract":"Antiferromagnetic materials with strong spin-phonon coupling have the potential for spintronic applications. Here, we report the structural, magnetic, and vibrational properties of 12R-BaTi0.4Mn0.6O3. Temperature-dependent magnetization data show the presence of weak antiferromagnetic interactions. Correlation between magnetic and vibrational properties are probed by using temperature-dependent Raman spectroscopic measurements. Two of the Raman active phonons show deviation from anharmonic behaviour at low temperatures which can be attributed to spin-phonon coupling. The strength of coupling is estimated using mean-field approximation and is found to be 1.1 and 1.2 cm−1 for phonons at 530 and 717 cm−1, respectively.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128683843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of the deposition parameters of spray pyrolysed PbS thin films in preparation of lead zinc sulphide thin films for solar cell applications 喷雾热解PbS薄膜制备太阳能电池用硫化铅锌薄膜工艺参数的优化
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0018357
E. Veena, I. I. Pattanshetti, Kavyashree, A. Hittalmani
{"title":"Optimization of the deposition parameters of spray pyrolysed PbS thin films in preparation of lead zinc sulphide thin films for solar cell applications","authors":"E. Veena, I. I. Pattanshetti, Kavyashree, A. Hittalmani","doi":"10.1063/5.0018357","DOIUrl":"https://doi.org/10.1063/5.0018357","url":null,"abstract":"Deposition parameters play a vital role in deposition of various thin films. Present paper concentrating concentration of precursor, Volume of the precursor, spray rate, nozzle to substrate distance and carrier gas pressure to synthesize the lead sulphide thin films which will be preliminary study for the synthesis of lead zinc sulphide thin films.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121300455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescent properties of Sm3+ activated β-NaYF4 microcrystals Sm3+活化β-NaYF4微晶的发光特性
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0016606
Sushri Sangita Nanda, P. Nayak, S. Dash
{"title":"Luminescent properties of Sm3+ activated β-NaYF4 microcrystals","authors":"Sushri Sangita Nanda, P. Nayak, S. Dash","doi":"10.1063/5.0016606","DOIUrl":"https://doi.org/10.1063/5.0016606","url":null,"abstract":"Sm3+ (1, 3, 5, 7 and 10 at.%) activated β-NaYF4 microphosphors were prepared via hydrothermal process at 200 0C. X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED) have been used to investigate the morphology and crystal structure of the samples. One interesting outcome of photoluminescence study involved the relative intensity variation of the strongest emission peak at ∼600 nm due to 4G5/2−6H7/2 transition under the excitation of 400 nm. These results were explained on the basis of multiple energy levels and self concentration quenching associated with the activator ion.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114597749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of metal and metal oxides in the matrix of graphite and Graphene using photoacoustic technique 利用光声技术研究石墨和石墨烯基体中的金属及其氧化物
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 Pub Date : 2020-11-05 DOI: 10.1063/5.0016910
A. Kumari, A. Chaudhary
{"title":"Study of metal and metal oxides in the matrix of graphite and Graphene using photoacoustic technique","authors":"A. Kumari, A. Chaudhary","doi":"10.1063/5.0016910","DOIUrl":"https://doi.org/10.1063/5.0016910","url":null,"abstract":"We report the study of Graphene, Graphene (GR)+Aluminum (GR +Al), and Graphene +Silver (GR +Ag), Graphite, ZnO, Fe2O3, Al2O3and their mixture with Graphene using time domain pulsed photoacoustic technique where Q-Switched Nd:YAG laser (532nm, 10Hz repetition rate was employed to study the samples and highlight the changes that occur when these samples are subjected to different incident laser energies.","PeriodicalId":222119,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2019","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134569605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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