B2有序全Heusler合金Co2MnAl薄膜的各向异性吉尔伯特阻尼

Vineet Barwal, N. K. Gupta, Soumyarup Hait, S. Husain, Nilamani Behera, S. Chaudhary
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引用次数: 1

摘要

研究了不同衬底温度(30°C、200°C、300°C、400°C和500°C)下生长在Si(100)衬底上的Co2MnAl (CMA)全Heusler合金薄膜的结构和动态磁化性能。XRD图谱显示,在Ts=200℃及以上温度下,形成了B2部分有序相。利用铁磁共振(FMR)技术测定了记录光谱的阻尼常数(α)、共振场(Hr)和谱线宽度(ΔH),并用Landau-Lifshitz-Gilbert (LLG)方程进行了拟合。当温度为200℃时,薄膜的最低阻尼常数为0.007±0.002。薄膜呈现单轴磁各向异性。沿易轴和硬轴计算各向异性阻尼常数α。沿两个方向观察到α的显著变化(约59%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Anisotropic gilbert damping in B2 ordered full Heusler alloy Co2MnAl thin films
Structural and dynamic magnetization properties of Co2MnAl (CMA) full Heusler alloy thin films grown on Si (100) substrate at different substrate temperatures (Ts) 30°C, 200°C, 300°C, 400°C and 500°C are investigated. XRD patterns revealed the formation of B2 partially ordered phase at Ts=200°C and above. Ferromagnetic Resonance (FMR) technique have been used to determine the damping constant (α), resonance field (Hr) and line width (ΔH) of recorded spectra and fitted by using Landau-Lifshitz-Gilbert (LLG) equation. The lowest damping constant was found to be 0.007±0.002 for the film grown at Ts=200°C. Films exhibit uniaxial magnetic anisotropy. Anisotropic damping constant α is calculated along the easy and hard axis. Along the two directions remarkable change (almost ∼59%) in α is observed.
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