{"title":"A Novel One-Step Calibration Method for On-Chip Oscillator","authors":"Yan Chen, Yousheng Chen, X. Tan, Xu Wang, Yan Guo","doi":"10.1109/ICAM.2018.8596361","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596361","url":null,"abstract":"A novel one-step calibration method with no iteration and high trimming accuracy for on-chip oscillator is proposed. The concept is to count oscillator cycles within a specified reference period of time, and take the count value as the trimming code of oscillator to achieve the targeted frequency. To demonstrate the effectiveness of this method, an on-chip RC relaxation oscillator with 8-bits trimming signal has been designed, analyzed and verified with a 0.5um CMOS technology. Simulation results show that the oscillator achieves a low frequency variation of $pm 0.8%$ over $+45%$ process variation of resistor and capacitor after one-step calibration.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132324344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Characterization of Superconducting Tungsten Thin Films Deposited by DC Magnetron Sputtering","authors":"Meng Wu, Wei Liang, Jinwen Zhang","doi":"10.1109/ICAM.2018.8596502","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596502","url":null,"abstract":"In this paper, we studied on the nanometer tungsten (W) thin films deposited onto Si3N4/SiO2/Si substrates by DC magnetron sputtering. The morphologies, crystal structures and components of W thin films with different thicknesses were investigated. The four-terminal electrodes structure was prepared by microfabrication technology and the electrical and superconducting properties of W thin films were measured. All results show that the W thin films are mainly composed of β-W under our experimental growth conditions. The superconducting transition temperature $(mathrm{T}_{mathrm{c}})$ of the W thin film with different thickness fluctuates from 1.15K to 1.65K.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power Characteristics for the Dual Channel 4H-SiC Metal Semiconductor Field Effect Transistor","authors":"Xianjun Zhang, Na You","doi":"10.1109/ICAM.2018.8596550","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596550","url":null,"abstract":"The current and breakdown characteristics of a dual channel 4H-SiC metal semiconductor field effect transistor (4H-SiC MESFET) are studied by using simulation tool ISE-TCAD. The simulated results show that current density of the dual channel structure is much higher than that of the conventional structure at the same gate bias. The breakdown happened in the gate terminal close to the drain and the breakdown voltage of the dual channel 4H-SiC MESFET is 120V, 50% higher than that of the conventional 4H-SiC MESFET because there is a more dispersive electric field distribution. So, the dual channel 4H-SiC MESFET has better power performance, when compared with the conventional structure.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131339927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ji Li, Yang Wang, Jiangling He, Handa Liu, Gengzhao Xiang
{"title":"Rapid Production of Customised Electronic Systems Via Multifunctional Additive Manufacturing Technology","authors":"Ji Li, Yang Wang, Jiangling He, Handa Liu, Gengzhao Xiang","doi":"10.1109/ICAM.2018.8596477","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596477","url":null,"abstract":"Multifunctional additive manufacturing technologies can facilitate the rapid development and direct production of full-functional electronic devices by coupling the capabilities of additive manufacturing processes with other types of manufacturing techniques. In addition, these methods present evident advantages for improving the development speed and complexity of mass customized electronic products. In this work, we propose a multifunctional additive manufacturing solution that integrates dual-material fused deposition modeling 3D printing and selective electroless plating. Nickel alloy film can be selectively plated on 3D printed free-form plastic structures. With four-point probe investigation, EDS anlysis and SEM imaging, it was identified that the resistivity of plated film can be regulated by controlling the electroless plating parameters including reaction temperature and pH value. A minimal resistivity of nickel alloy film was approximate $mathbf{8.4}times mathbf{10}^{-mathbf{5}}Omegacdotmathbf{cm}$, when the electroless plating was conducted at 50°C and pH 8.5. A 555 timer circuit with blinking LED was fabricated in both 2D and 3D manner as a demonstrator to prove the feasibility of this technology in practical industry applications.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"51 Suppl 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131347634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Implementation of Multipath Transformer in CMOS Voltage-Controlled Oscillator CMOS VCO Using Multi-Path Transformer","authors":"W. Lai, S. Jang, Yu-Wen Huang","doi":"10.1109/ICAM.2018.8596589","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596589","url":null,"abstract":"A complementary oscillator was implemented in the TSMC $mathbf{0.18} mumathbf{m}$ 1P6M CMOS process, and it uses spiral multipath transformer to increase the quality factor of passive transformer. The multi-path transformer consists of a 3-path inductor internal to a single-path inductor used as the secondary inductor. The oscillator uses the Accumulation-mode MOS varactors for frequency tuning. The VCO uses no dynamic bias to lower the power consumption in steady state and the core current and power consumption of the oscillator are 4.05 mA and 4.457 m W, respectively at the de drain-source bias of 1.1 V. The oscillator can generate differential signals in the frequency range of 3.3-3.62 GHz. The die area of the oscillator is $mathbf{1.148}timesmathbf{0.987 mm}^{mathbf{2}}$.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134370192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lin Zhao, Liya Ye, Ruixiang Tao, Fei Yuan, Yong Yang, Peng Jiang
{"title":"Optimal Design of Insulation in Compact Switchgear Based on ANSYS Simulation and Partial Discharge Test","authors":"Lin Zhao, Liya Ye, Ruixiang Tao, Fei Yuan, Yong Yang, Peng Jiang","doi":"10.1109/ICAM.2018.8596485","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596485","url":null,"abstract":"An optimal design and layout of the insulation structure in the compact switchgear is proposed to improve its insulation effect. Firstly, electric field simulation and partial discharge test for the shielding effect of busbar through-wall bushing and contact box shielding are carried out. Then, test analysis of the condensation characteristics of the switchgear and electric field simulation of the influence of condensation on the electric field distribution of the insulator are carried out. Finally, the insulation components of the switchgear cable room are optimized. The insulation performance is verified by electric field simulation and partial discharge test.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133935036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Ullah, Yu Liu, Zhiqiang Li, Xiaosong Wang, M. Sarfraz, Haiying Zhang
{"title":"A Wideband Tunable Voltage Controlled Oscillator Supporting Non-harmonically-Related Multiple Frequency Bands for Future 5G Applications Using $mathbf{0.13}-mu mathbf{m}$ SiGe BiCMOS Technology","authors":"F. Ullah, Yu Liu, Zhiqiang Li, Xiaosong Wang, M. Sarfraz, Haiying Zhang","doi":"10.1109/ICAM.2018.8596529","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596529","url":null,"abstract":"A wideband tunable Voltage Controlled Oscillator (VCO) that covers the two 5G frequency bands dedicated for future 5G communication, is presented in this paper. The two distinct frequency bands are selected by switching ON and OFF the fixed capacitance of the resonator. The designed VCO is integrated with a novel distributed biased wideband varactor circuit to achieve the desired range at the targeted bands. The oscillator can be continuously tuned in a wide bandwidth from 27 GHz to 39.5 GHz., thereby covering the two 5G bands (28 GHz and 38 GHz) with a stand-alone LC oscillator. The simulated phase noise at 28 GHz and 38 GHz are recorded as −93 dBc/Hz and −90 dBc/Hz., respectively. The total power consumption is 9.7mW from a 1.2 V supply.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129327806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A CMOS Laser Driver with Configurable Optical Power for Time-of-Flight 3D-Sensing","authors":"Cheng Wang, Shenglong Zhuo, Chang Liu","doi":"10.1109/ICAM.2018.8596490","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596490","url":null,"abstract":"A fast-pulse, configurable output optical power and high-pulse frequency integrated CMOS laser driver for 3D sensing is presented in this paper. The architecture of the proposed laser driver uses a DC-coupled structure, while risetime improvement is achieved by adding a resistor in parallel with the VCSEL. The proposed integrated laser driver is implemented in a $0.18mu text{m}$ CMOS process with a 3.3V power supply. The measurement results show that the laser driver can deliver 0.20-0.92W configurable optical power to free space at a 100MHz pulse repetition rate.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"121 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123213609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chengzhi Jiang, Xiaoming Fan, Y. Xing, Xiangkun Qi, Yang Wang, He Wang
{"title":"Efficient Hihg-Sigma Yield Analysis with Yield Optimization Method for Near-Threshold SRAM Design","authors":"Chengzhi Jiang, Xiaoming Fan, Y. Xing, Xiangkun Qi, Yang Wang, He Wang","doi":"10.1109/ICAM.2018.8596401","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596401","url":null,"abstract":"The enhancement of process, the feature size of device becomes smaller, and the deductions of power supply require the design of SRAM should be consummated. For the design of 6-T SRAM, although we have many methods to optimize it in order to overcome lots of challenges. But the smaller feature size and lower power supply will produce a decline in the performance of Static Noise Margin (SNM) and increase of leakage current. They also produce much more uncertain factors than before. To make matters worse, 6-T SRAM may not work properly. So a new structure with good design-for-yield (DFY) to work at lower supply voltage becomes more important. We have found a alternative structure, which we call it 8-T SRAM. And we can prove its performance is more suitable for the demand in the future SRAM design. But there is still no comprehensive method to optimize 8-T SRAM design, and we don't know whether its yield is acceptable or not. In this paper, we propose a comprehensive method for statistical 8-T SRAM design relying on an efficient combination of yield analysis and performance optimization. To the best of our knowledge, this is the first time that such a comprehensive method is applied to analyzing and optimizing the 8-T SRAM design with lower power supply.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122207985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Novel Hardware Trojan Protection Technology Based on Logic Encryption","authors":"Yi-lun Zhang, Yingjian Yan, Jun-Wei Li, Min Liu","doi":"10.1109/ICAM.2018.8596337","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596337","url":null,"abstract":"With the rapid development of integrated circuits and microsystems, the security of this IC industry is getting more and more attention [1]. Therefore, there may be malicious circuit insertion at various stages, resulting in functional failure, performance degradation. In order to prevent the circuit from being plugged into the hardware Trojan, there are now some hardware Trojan protection technologies, including logic encryption, BISA technology and so on. Among them, logic encryption technology makes it difficult for hardware Trojan attackers to insert Trojans for rare nodes by obfuscating the circuits. This paper proposes a novel hardware Trojan protection technology based on logic encryption, which not only defenses against this attack technique of Hamming distance, but also proposes a fake rare node to confuse the circuit.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114548201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}