发布求助
文献互助 智能选刊 最新文献

2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)最新文献

筛选
英文 中文
A Low Energy Consumption Passive RF Activation Circuit with Stable Output 具有稳定输出的低能耗无源射频激活电路
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596417
X. Liu, Chen Lin, Chunqi Qian, Teng Zhan, Hongyun Xie, X. Yi
{"title":"A Low Energy Consumption Passive RF Activation Circuit with Stable Output","authors":"X. Liu, Chen Lin, Chunqi Qian, Teng Zhan, Hongyun Xie, X. Yi","doi":"10.1109/ICAM.2018.8596417","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596417","url":null,"abstract":"In order to solve the energy consumption problem of active RFID tag and prolong the battery life, a passive RF activation circuit without source power, which composed of diodes and capacitors, is studied in this paper. The circuit collects and converts RF energy to DC power. Therefore, it does not need power supply and can efficiently decrease the power consumption. The electromagnetic co-simulation simulation results show that the circuit can generate about 1.5V DC stable output when the antenna absorbs −20dBm RF power (Standard RFID power signal is −10~−50dBm, so average figure is chosen here). It is very suitable for application in electronic documents and device management with their normal operation voltage always 1-2V.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124891956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Three-level SVPWM Control Algorithm 一种三电平SVPWM控制算法
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596429
Weifeng Zhang, Yan Chen, Yunfeng Xing, Jian Wang
{"title":"A Three-level SVPWM Control Algorithm","authors":"Weifeng Zhang, Yan Chen, Yunfeng Xing, Jian Wang","doi":"10.1109/ICAM.2018.8596429","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596429","url":null,"abstract":"The three-level Space Vector Pulse Width Modulation (SVPWM) principle is shown. A novel space vector modulation algorithm which use positive or negative small vectors as first active vector is presented. The judging rules of the small sectors and the out voltage vector sequence are presented as well as the producing of the signals for SVPWM. Also, the dwelling time of each out voltage is computed. The analysis of other sectors is realized by transforming the sectors. The validity of the proposed method is demonstrated by the simulation results.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130124944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Analysis of Transient Stability with SSSC and UPFC with Multi-Band PSS in Two Area Multi-Machine System 两区多机系统中SSSC和UPFC多频段PSS的暂态稳定性分析
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596514
A. Siddique, Yonghai Xu, Waseem Aslam, M. Rasheed, Maham Fatima
{"title":"Analysis of Transient Stability with SSSC and UPFC with Multi-Band PSS in Two Area Multi-Machine System","authors":"A. Siddique, Yonghai Xu, Waseem Aslam, M. Rasheed, Maham Fatima","doi":"10.1109/ICAM.2018.8596514","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596514","url":null,"abstract":"Power system stability plays a vital role in the growth of large interconnected power systems. Today's power system continues to expand in an exponential way due to an extensively automated need of both domestic and industrial needs. The ever-growing demand of power system network has resulted in rotor angle oscillations and voltage instability. In this paper, Static synchronous series compensator (SSSC) and Unified power flow controller (UPFC) are employed to analyze the transient stability of the power network with multi-band power system stabilizer (MB-PSS). The two area four machine power network has been considered to illustrate the performance of UPFC and SSSC in coordination with MB-PSS. To investigate the achievements of the designed system simulation has been carried out in MATLAB/Simulink software. The simulation results show that UPFC with MB-PSS controller gives a better improvement in transient stability compared with SSSC coordinated with MB-PSS.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123159266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Novel Design of SOI SiGe HBTs with High Johnson's Figure-of-Merit 具有高约翰逊品质系数的SOI SiGe HBTs的新设计
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596480
Lifan Wang, D. Jin, Wanrong Zhang, Rui Chen, Bin Guo, Hu Chen, Hao Liu
{"title":"Novel Design of SOI SiGe HBTs with High Johnson's Figure-of-Merit","authors":"Lifan Wang, D. Jin, Wanrong Zhang, Rui Chen, Bin Guo, Hu Chen, Hao Liu","doi":"10.1109/ICAM.2018.8596480","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596480","url":null,"abstract":"A novel design of SOI SiGe HBTs with a buried n<sup>+</sup> thin layer and p<sup>−</sup> doping layer is proposed to improve the product of cutoff frequency and breakdown voltage, which is a vital Johnson's figure of merit (J-FOM) of the device. In this design, the n<sup>+</sup> thin layer is used to increase the cutoff frequency and the p<sup>−</sup> doping layer is adopted to maintain a high breakdown voltage. Furthermore, the thickness of n<sup>+</sup> thin layer is also studied to improve the J-FOM. As a result, for the novel SOI SiGe HBT, the J-FOM is increased from 351.5GHz-V to 482.3GHz-V, when compared with that of the traditional device. This design effectively develops the application of SOI SiGe HBTs in microwave power.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Research on Risk Assessment in Distribution Network with PV Generations 光伏发电配电网风险评估研究
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596470
Zhang Hua, J. Cui, Diao Chang, Ping Yongchen, T. Qiming, Yuan Quanning, Min Bo
{"title":"Research on Risk Assessment in Distribution Network with PV Generations","authors":"Zhang Hua, J. Cui, Diao Chang, Ping Yongchen, T. Qiming, Yuan Quanning, Min Bo","doi":"10.1109/ICAM.2018.8596470","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596470","url":null,"abstract":"Based on the fact that the traditional power system is suffering more influence after the access of PV generations, this paper focuses on the risk assessment in distribution network system with PV generations. It takes two situations into account, PV in different nodes and different PV capacities. Firstly simulates PV output which can reflect the PV characteristics, and then calculates power flow to get the nodes voltage amplitude and branch flow. Finally accesses the risk in distribution network with PV generations about the two situations mentioned above according to the risk indicators. Taking the IEEE 34 case and an actual distribution network as examples, the risk assessment of the distribution network with PV is carried out. The results show that the closer the PV position is to the end of the line, the higher the voltage will be. In addition, when PV is connected, the possibility of voltage limitation is larger than that of branch flow.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"22 6S 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133132027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Research on Very Fast Transient Overvoltage During Switching of Disconnector in 550kV GIS 550kV GIS隔离开关快速瞬态过电压的研究
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596673
Lin Zhao, Liya Ye, Shaoan Wang, Yong Yang, Peng Jiang, Xiaofeng Zou
{"title":"Research on Very Fast Transient Overvoltage During Switching of Disconnector in 550kV GIS","authors":"Lin Zhao, Liya Ye, Shaoan Wang, Yong Yang, Peng Jiang, Xiaofeng Zou","doi":"10.1109/ICAM.2018.8596673","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596673","url":null,"abstract":"This paper establishes a circuit-simulation model about 550kV gas insulated switchgear (GIS) of Hongping pumped storage power station by using Electro-Magnetic Transient Program (EMTP). Then, the very fast transient overvoltage (VFTO) is calculated when the transformer, the bus line and the outgoing line are switched. As to the calculation results, the influence of VFTO on transformer as well as the influence of cable on VFTO are analyzed. Analysis shows that VFTO amplitude at transformer port is small, but it may excite significant internal resonance voltage under high-frequency oscillation which may harm the turn insulation of power transformer. Besides, long cable connecting the ground part and underground part of GIS accelerates the attenuation of the transient progress. Finally, the case in which the most serious VFTO of transformer port appears is chosen as a model to research the VFTO's suppressing measure. The research reveals that building a 3-meter-long overhead line between GIS bushing and transformer can effectively keep the wave front steepness below the restriction level. The wave front steepness of VFTO decreases by 30.2% from $mathbf{1631} mathbf{kV}/mumathrm{s}$ to $mathbf{1138}mathbf{kV}/mu mathbf{s}$.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132834549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor 一种采用差动有源电感的新型高输出功率低相位噪声LC压控振荡器
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596609
Yin Zhang, Wanrong Zhang, Pei Shen, Hongyun Xie, D. Jin, Shu Xu, Xin Yang, Zhao Zhang
{"title":"A Novel LC VCO with High Output Power and Low Phase Noise Using Differential Active Inductor","authors":"Yin Zhang, Wanrong Zhang, Pei Shen, Hongyun Xie, D. Jin, Shu Xu, Xin Yang, Zhao Zhang","doi":"10.1109/ICAM.2018.8596609","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596609","url":null,"abstract":"This paper presents a novel LC voltage-controlled-oscillator (VCO) based on active inductor (AI). Taking advantage of equivalent RLC model of the AI, a novel tunable differential AI (DAI) is designed and used to act as the LC tank of the VCO. First, a tunable DAI with cascode-structure and current-mirror feedback networks is designed to achieve high quality factor $(pmb{Q})$ and high equivalent parallel resistance (Rp). Then, the DAI is used to replace LC in VCO to realize good comprehensive performance of VCO such as low phase noise, low power consumption and high output power. Based on TSMC $mathbf{0.18}mumathbf{m}$ RF CMOS process, the novel VCO is verified by Agilent's Advanced Design System (ADS). The results show that under the supply voltage of 1.8V, the output power reaches up to −4.2 dBm, a frequency tuning range is in 1.126-2.713 GHz, and the phase noise at 1-MHz offset is −117.2 dBc/Hz. A power of only 13.6 mW is consumed.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116183030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 79.28–89.6 GHz Digitally Controlled Oscillator with High Frequency Resolution in 40nmCMOS 40nmCMOS中79.28-89.6 GHz高频率分辨率数字控制振荡器
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596464
Pengfei Liu, Lu Tang
{"title":"A 79.28–89.6 GHz Digitally Controlled Oscillator with High Frequency Resolution in 40nmCMOS","authors":"Pengfei Liu, Lu Tang","doi":"10.1109/ICAM.2018.8596464","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596464","url":null,"abstract":"This paper presents a millimeter-wave digitally controlled oscillator(DCO) with the digital controlled artificial dielectric(DiCAD) differential transmission line to achieve wide frequency tuning range, over a frequency range of 12.2%. To optimize the frequency resolution of the fine tuning, a transformer with a weak mutual coupling factor was designed to attenuate its frequency tuning sensitivity to the variation step of tunable capacitance. The DCO is fabricated in a 40nm CMOS. The simulated results show that the proposed DCO achieves a tuning range of 79.28GHz- 89.6GHz with 2.6MHz resolution within the whole tuning range. The phase noise is −95.5 dBc/Hz at 1-MHz frequency offset at 79.28GHz. The chip size is 0.18mm2.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115225114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The Design of Low Temperature Coefficient Band-Gap Reference 低温系数带隙基准的设计
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596482
Dagang Li, Yuanjun Cen, Ping-Ling Yang, Yongkai Li, Xu Qi, Zhikai Liao
{"title":"The Design of Low Temperature Coefficient Band-Gap Reference","authors":"Dagang Li, Yuanjun Cen, Ping-Ling Yang, Yongkai Li, Xu Qi, Zhikai Liao","doi":"10.1109/ICAM.2018.8596482","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596482","url":null,"abstract":"Sometimes, the high-resolution A/D or D/A converter all need a high precision reference, the voltage of reference will determine the precision of the conversion result. In whole system, it always requires that the conversion result should be in a specified range in a wide temperature range. In order to release the variation range of conversion result, it requires that the temperature coefficient of reference should be very small. In this paper, it introduces one higher order compensated band-gap reference, it uses the current $mathrm{I}_{mathrm{b}}$ from the existing structure to compensate the higher-order voltage of $mathbf{V}_{mathrm{BE}}$. In this way, the temperature coefficient of this Band-Gap Reference will be less than 1ppm/°C in theory.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124224876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A High-Temperature Model of MOSFET Characteristics in $0.13-mu text{m}$ Bulk CMOS $0.13-mu text{m}$ Bulk CMOS中MOSFET特性的高温模型
2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2018-11-01 DOI: 10.1109/ICAM.2018.8596520
B. Vosooghi, Jinghong Chen
{"title":"A High-Temperature Model of MOSFET Characteristics in $0.13-mu text{m}$ Bulk CMOS","authors":"B. Vosooghi, Jinghong Chen","doi":"10.1109/ICAM.2018.8596520","DOIUrl":"https://doi.org/10.1109/ICAM.2018.8596520","url":null,"abstract":"There is an increasing demand for reliable high-temperature electronics implemented in low-cost bulk CMOS technologies. In this paper, first, a detailed study of high-temperature impairments and reliability issues is presented. An analytical model for high-temperature operation of MOSFET devices in $0.13-mu text{m}$ bulk CMOS process is then presented. The proposed large-signal model includes temperature effect on the leakage current, carrier mobility and threshold voltage. The small-signal model includes temperature effect on the transconductance and output impedance. A prototype has been made in $0.13-mu mathbf{m}$ bulk CMOS. The I-V transfer characteristics have been measured at different temperatures from 25°C to 200°C. The experimental results are compared with the simulation results from the developed model. The simulation results demonstrate a very good agreement with the experimental data. The EDA tools models provided by the foundry do not generally guarantee model correctness at high temperatures. Therefore, the foundry models of the $0.13-mu text{m}$ CMOS process have been simulated to verify the model reliability at high temperatures. The EDA tools results are overall in close agreement with the measured data, which shows the reliability of the transistor model for the $0.13-mu text{m}$ technology at high-temperature.","PeriodicalId":220324,"journal":{"name":"2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115319128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信
小红书