1977 International Electron Devices Meeting最新文献_第8页

Directly light-fired thyristors with high di/dt capability 具有高di/dt能力的直接点燃晶闸管

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189148

V. Temple

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引用次数: 8

The thin film polycrystalline solar cell program in the U.S.A. 美国的薄膜多晶太阳能电池项目

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189208

D. Feucht

引用次数: 0

Computer aided design of TWTs 行波管的计算机辅助设计

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189281

W. Harman

引用次数: 0

Low temperature threshold behavior of depletion mode devices—Characterization and simulation 耗尽模式器件的低温阈值行为表征与仿真

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189307

F. Gaensslen, R. Jaeger, J.J. Walker

引用次数: 20

An optically triggered double heterostructure linear bilateral phototransistor 一种光触发双异质结构线性双边光电晶体管

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189292

S. Knight, L. Dawson, V. Keramidas, M. Spencer

引用次数: 0

High performance Ni-Pd/GaAs Schottky barrier mixer diodes made by electroplating 电镀制备高性能Ni-Pd/GaAs肖特基势垒混合二极管

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189260

A. Nara, T. Ishii, H. Ikegawa, S. Mitsui, K. Shirahata

引用次数: 0

Design, fabrication, and performance of a flat tube display 平面管显示器的设计、制造和性能

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189167

W. Holton, W. C. Scott, W.G. Manns, D. F. Weirauch, M. Namordi, F. Doerbeck, R. Pitts, K.H. Surtani, R. Gooch, J. E. Gunther

引用次数: 1

A 1024 element linear CCD sensor with a new photodiode structure 一种具有新型光电二极管结构的1024元线阵CCD传感器

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189313

S. Ohba, M. Aoki, M. Nakai, K. Uchiumi, N. Tsunefuka, M. Kubo, M. Fujita

引用次数: 0

Absolute parameter measurements using the self-detection mode of Gunn oscillators 使用Gunn振荡器的自检测模式进行绝对参数测量

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189174

M. Lakshminarayana, L. Partain

引用次数: 0

A K-band GaAs FET with 2.5 dB noise figure at 18 GHz 18ghz时噪声系数为2.5 dB的k波段GaAs场效应管

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1977.189333

W. Hooper, J.R. Anderson, H. Cooke, M. Omori

引用次数: 5