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2007 IEEE/MTT-S International Microwave Symposium最新文献

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Ring-Type Dielectric Resonator Cavity Filters with Wide Spurious Free Region 宽杂散自由区环型介质谐振腔滤波器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380303
Xiaoguang Sun
{"title":"Ring-Type Dielectric Resonator Cavity Filters with Wide Spurious Free Region","authors":"Xiaoguang Sun","doi":"10.1109/MWSYM.2007.380303","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380303","url":null,"abstract":"Spurious modes suppressions are compared between the dielectric resonator cavity filters with cylindrical and rectangular structures in this paper. Using mode matching method , Mode charts are computed to analyze that. The comparisons show that the cylindrical cavity filter has better spurious response. Two experimental filters are designed. And the measured results have good agreement with the analysis.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122923544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Higher Order Vector Bases for the Method of Moments Analysis of a Class of Waveguide and Dielectric Resonator Filters Involving Curved Boundaries 一类涉及弯曲边界的波导和介质滤波器矩分析方法的高阶向量基
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380194
V. Catina, F. Arndt, J. Brandt
{"title":"Higher Order Vector Bases for the Method of Moments Analysis of a Class of Waveguide and Dielectric Resonator Filters Involving Curved Boundaries","authors":"V. Catina, F. Arndt, J. Brandt","doi":"10.1109/MWSYM.2007.380194","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380194","url":null,"abstract":"A combined electric field integral (EFIE) Poggio-Miller-Chang-Harrington-Wu-Tsai (PMCHWT) surface integral equation technique is presented, in which divergence-conforming higher order vector basis functions are applied. Curved surfaces are modeled using curvilinear triangles in order to minimize geometrical modeling inaccuracies. Conforming vector bases provide appropriate continuity at material interfaces and allow for imposing boundary conditions on unknown fields or currents. The advantage of the proposed method against existing approaches is its higher efficiency and flexibility. The versatility and accuracy of the method are verified at typical filter examples by comparison with reference results.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122927298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Gated Envelope Feedback Technique for Automatic Hardware Conditioning of RFIC PA's at Low Power Levels 基于门控包络反馈的低功耗射频放大器硬件自动调节技术
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380309
N. Constantin, P. Zampardi, M. El-Gamal
{"title":"A Gated Envelope Feedback Technique for Automatic Hardware Conditioning of RFIC PA's at Low Power Levels","authors":"N. Constantin, P. Zampardi, M. El-Gamal","doi":"10.1109/MWSYM.2007.380309","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380309","url":null,"abstract":"A method for automatic multi-state hardware conditioning of RFIC PA's using a single control line is proposed. A gating technique is introduced to allow an on-chip embodiment of envelope feedback, used to simplify circuits and gain calibration requirements. Experimental results obtained with a GaAs IC implementation totaling an area of only 1.4mm2 show a potential for single chip integration of this technique.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116812626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 6-18 GHz Push-Pull Power Amplifier with Wideband Even-Order Distortion Cancellation in LCP Module LCP模块中一种宽带偶阶失真消除的6-18 GHz推挽功率放大器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380280
A.C. Chen, A. Pham, R. Leoni
{"title":"A 6-18 GHz Push-Pull Power Amplifier with Wideband Even-Order Distortion Cancellation in LCP Module","authors":"A.C. Chen, A. Pham, R. Leoni","doi":"10.1109/MWSYM.2007.380280","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380280","url":null,"abstract":"We present the development of a microwave push-pull power amplifier (PA) module that achieves both high output power and wide bandwidth 2nd-order harmonic cancellation from 6 GHz to 18 GHz. Measured PldB output power for the push-pull PA is 31 dBm, while its 2nd-order harmonic distortion is reduced by a minimum 20 dB throughout the 6-18 GHz passband compared to a single PA. The 2nd-harmonic output of the push-pull PA was also measured to be lower than -40 dBc all the way up to 36 GHz. The PA module was integrated into a liquid crystal polymer (LCP) substrate that enables the design of wide bandwidth baluns with less than 0.5 dB and 6deg amplitude and phase imbalances, respectively.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128386698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A new physics-based compact model for AlGaN/GaN HFETs 一种新的基于物理的AlGaN/GaN hfet紧凑模型
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380058
H. Yin, G. Bilbro, R. Trew
{"title":"A new physics-based compact model for AlGaN/GaN HFETs","authors":"H. Yin, G. Bilbro, R. Trew","doi":"10.1109/MWSYM.2007.380058","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380058","url":null,"abstract":"A physics-based analytic model with no fitting parameters is introduced for the AlGaN/GaN HFET. For unsaturated operation, non-linear analytic models for the I-V characteristics in the two access regions and beneath the gate are developed. The resulting equations are linked together by voltage and current continuity at the boundaries. Good agreement between the model and corresponding simulations with ATLAS, a commercial simulator, is demonstrated. In addition, the proposed model is shown to compare favorably with popular curve-fitting models of HFET operation.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124745699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Full-wave analysis of periodic microstrip lines excited by an aperiodic delta-gap source 非周期δ隙源激发的周期微带线的全波分析
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380026
R. Rodríguez-Berral, G. Valério, F. Mesa, P. Baccarelli, P. Burghignoli, A. Galli
{"title":"Full-wave analysis of periodic microstrip lines excited by an aperiodic delta-gap source","authors":"R. Rodríguez-Berral, G. Valério, F. Mesa, P. Baccarelli, P. Burghignoli, A. Galli","doi":"10.1109/MWSYM.2007.380026","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380026","url":null,"abstract":"A study is presented of the current excited on a printed periodic structure by a single aperiodic source. In particular, both completely shielded and open microstrip lines periodically loaded with gaps are considered, excited by a delta-gap voltage source. The aperiodicity of the source does not allow for a direct application of the Floquet theorem. The array scanning method (ASM) is then applied, which reduces the aperiodic problem to an integral superposition of suitable Floquet-periodic problems. Efficient numerical implementations of the ASM are developed, for both the shielded and the open cases, based on the method of moments with entire-domain basis functions. Numerical results are presented for dispersion features and Bloch modes supported by the periodic microstrip line and for the current excited by the source in different frequency ranges corresponding to passband and stopband regimes of the fundamental perturbed quasi-TEM mode.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129803059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
GaN HEMT 60W Output Power Amplifier with Over 50% Efficiency at C-Band 15% Relative Bandwidth Using Combined Short and Open Circuited Stubs GaN HEMT 60W输出功率放大器，在c波段15%相对带宽下效率超过50%，采用联合短路和开路存根
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380396
K. Iyomasa, K. Yamanaka, K. Mori, H. Noto, H. Ohtsuka, M. Nakayama, S. Yoneda, Y. Kamo, Y. Isota
{"title":"GaN HEMT 60W Output Power Amplifier with Over 50% Efficiency at C-Band 15% Relative Bandwidth Using Combined Short and Open Circuited Stubs","authors":"K. Iyomasa, K. Yamanaka, K. Mori, H. Noto, H. Ohtsuka, M. Nakayama, S. Yoneda, Y. Kamo, Y. Isota","doi":"10.1109/MWSYM.2007.380396","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380396","url":null,"abstract":"In this paper, a broadband high efficiency amplifier is proposed, which uses both short and open circuited stubs for simultaneous broadband impedance matching for fundamental frequency and 2nd-harmonic. The developed GaN HEMT amplifier with 16 mm gate periphery has achieved over 60 W output power with over 50% drain efficiency (over 45% power-added-efficiency) across 15% relative bandwidth at C-Band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier with over 50 W output power at C-band to the best of our knowledge.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129916481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 1.1V Low Phase Noise CMOS Quadrature LC VCO with 4-Way Center-tapped Inductor 带4路中心抽头电感的1.1V低相位噪声CMOS正交LC压控振荡器
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380092
Parag Upadhyayal, Deukhyoun Heol, D. Rector, Y. Chen
{"title":"A 1.1V Low Phase Noise CMOS Quadrature LC VCO with 4-Way Center-tapped Inductor","authors":"Parag Upadhyayal, Deukhyoun Heol, D. Rector, Y. Chen","doi":"10.1109/MWSYM.2007.380092","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380092","url":null,"abstract":"A 2 GHz series coupled quadrature CMOS LC voltage controlled oscillator (SCQ-VCO) with 4-way center-tapped inductor has been designed in a standard 0.18-mum process. Consuming total 10 mA of current from a 1.1 V power supply, the quadrature VCO achieves a measured single-sideband phase noise of -119 dBc/Hz at 1.0 MHz offset frequency. The VCO achieves -17 dBm of carrier power to a 50-ohm load and tuning range of 200 MHz to meet requirements for the WCDMA standard. Series-coupled technique for achieving quadrature phase lock with low phase error (<0.6deg) and a four-way center-tapped inductor to lower the phase noise is presented.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130301793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An Ultra-Wideband BGA-Via Transition for High-Speed Digital and Millimeter-Wave Packaging Applications 用于高速数字和毫米波封装应用的超宽带BGA-Via转换
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380001
T. Kangasvieri, J. Halme, J. Vahakangas, M. Lahti
{"title":"An Ultra-Wideband BGA-Via Transition for High-Speed Digital and Millimeter-Wave Packaging Applications","authors":"T. Kangasvieri, J. Halme, J. Vahakangas, M. Lahti","doi":"10.1109/MWSYM.2007.380001","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380001","url":null,"abstract":"This paper presents a high-performance BGA-via transition structure suitable for multilayer system-in-package (SiP) applications over a wide frequency range from DC up to the F-band. The main issues involved in designing and optimizing the entire vertical transition path, starting from a motherboard and ending at the top surface of a BGA module package are outlined. The module substrates were manufactured in a standard, multilayer low-temperature co-fired ceramic (LTCC) process. The ceramic modules with plastic-core solder balls were mounted on a motherboard using standard surface-mount assembly processes. The RF performance of the developed transition structure was validated with on-wafer scattering parameter measurements. The measured results correlated very well with full-wave electromagnetic (EM) simulations, exhibiting return and insertion loss values better than 22 dB and 0.6 dB, respectively, up to 50 GHz. Moreover, the EM simulations demonstrated that the 1-dB cut-off frequency of the complete BGA-via transition structure can be extended from 55 GHz up to nearly 70 GHz at the expense of poorer return loss.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"2293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130304040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A Low Noise Chipset for Passive Millimeter Wave Imaging 无源毫米波成像的低噪声芯片组
2007 IEEE/MTT-S International Microwave Symposium Pub Date : 2007-06-03 DOI: 10.1109/MWSYM.2007.380466
H. Moyer, J. Lynch, J. Schulman, R. Bowen, J. Schaffner, A. Kurdoghlian, T. Hsu
{"title":"A Low Noise Chipset for Passive Millimeter Wave Imaging","authors":"H. Moyer, J. Lynch, J. Schulman, R. Bowen, J. Schaffner, A. Kurdoghlian, T. Hsu","doi":"10.1109/MWSYM.2007.380466","DOIUrl":"https://doi.org/10.1109/MWSYM.2007.380466","url":null,"abstract":"Technology for passive millimeter wave imaging has been maturing over the last 4-5 years. One key piece of technology that will allow for large scale production is a low cost front-end receiver. We have developed a two chip solution that addresses this need at W-band. A four stage InP LNA with a pre-matched Sb-heterostructure diode provides a low noise equivalent temperature difference (NETD). Our fabricated chipset provides sensitivities of 10,000 mV/muW over a 22 GHz noise equivalent bandwidth and an NETD of 0.8 K. To our knowledge, this is the best performance to date of a two chip solution for a passive millimeter wave radiometer.","PeriodicalId":213749,"journal":{"name":"2007 IEEE/MTT-S International Microwave Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130506819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
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