K. Iyomasa, K. Yamanaka, K. Mori, H. Noto, H. Ohtsuka, M. Nakayama, S. Yoneda, Y. Kamo, Y. Isota
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GaN HEMT 60W Output Power Amplifier with Over 50% Efficiency at C-Band 15% Relative Bandwidth Using Combined Short and Open Circuited Stubs
In this paper, a broadband high efficiency amplifier is proposed, which uses both short and open circuited stubs for simultaneous broadband impedance matching for fundamental frequency and 2nd-harmonic. The developed GaN HEMT amplifier with 16 mm gate periphery has achieved over 60 W output power with over 50% drain efficiency (over 45% power-added-efficiency) across 15% relative bandwidth at C-Band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier with over 50 W output power at C-band to the best of our knowledge.
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