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2019 International Conference on Electronics Packaging (ICEP)最新文献

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R2R Nano-patterning Technology Using 250 mm-wide Seamless Roller Mold 250mm宽无缝辊模R2R纳米图案技术
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733429
K. Komatsu, M. Abe, N. Ito, S. Matsui
{"title":"R2R Nano-patterning Technology Using 250 mm-wide Seamless Roller Mold","authors":"K. Komatsu, M. Abe, N. Ito, S. Matsui","doi":"10.23919/ICEP.2019.8733429","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733429","url":null,"abstract":"For the future electronics devices, like flexible electronics, Asahi-Kasei has been developing SRM fabrication technology. We got fine and accurate patterns on the roller surface by development applied process of conventional EB lithography, named rEBL process. This paper shows the detail of rEBL process. And we developed some patterning process for transfer the pattern of the roller to plastic substrates. We demonstrated some patterns on the substrates. We also show the example of flexible electronics devices, Transparent Conductive Film by using this patterning process.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122956201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Development of Compact and High-Efficient Simple CPW Rectenna for RF Energy Harvesting 用于射频能量收集的紧凑高效简单CPW整流天线的研制
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733535
M. Mansour, H. Kanaya
{"title":"Development of Compact and High-Efficient Simple CPW Rectenna for RF Energy Harvesting","authors":"M. Mansour, H. Kanaya","doi":"10.23919/ICEP.2019.8733535","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733535","url":null,"abstract":"The Wireless Body Sensor Network (WBSN) is used for communication of the sensor nodes operating on or inside the human body in order to monitor the human activities. Wearable sensors can monitor and record real-time information about one’s physiological condition and motion activities. Wearable sensor-based health monitoring systems may comprise different types of flexible sensors that can be integrated into textile fiber, clothes, and elastic bands or directly attached to the human body. In this context, wearable technology has been addressed to make humans (his clothes) able to communicate with, and be part of the interconnected network. The proposed rectenna architecture is designed to harvest energy efficiently in the vicinity of low intercepted power around 0dBm. The rectifier is composed of voltage doubler circuit with LC matching circuit. The antenna is commercially available from flexible conductive film, COCOMI®, Toyobo Co., Ltd. The overall rectifier dimensions are very compact 19.5 × 9.7mm2. There are a good agreement between the simulation and measurement results. For instance, the peak measured efficiency is 52% at −5dBm RF input power and the corresponding simulated value is 61%. The 63% peak measured efficiency is achieved at 5dBm with a terminal load 5kΩ","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121726127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Barrier properties of electroless deposit of Co-W-P alloy Co-W-P合金化学镀层的阻隔性能
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733487
Shoichiro Kanzaki, T. Shibata, S. Kurosaka, Yukinori Oda, S. Hashimoto
{"title":"Barrier properties of electroless deposit of Co-W-P alloy","authors":"Shoichiro Kanzaki, T. Shibata, S. Kurosaka, Yukinori Oda, S. Hashimoto","doi":"10.23919/ICEP.2019.8733487","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733487","url":null,"abstract":"It is known that the Co alloy deposit has high electromigration resistance and thermal diffusion resistance to Cu. We could prepare electroless deposit of Co-W-P with different W contents on Cu substrate by changing the Co-W-P bath parameter. After heat treatment under 200-400°C with Air or N2 conditions, Cu diffusion to the surface was measured. Co-W-P layer has excellent barrier property for Cu in N2 heat treatment. However, Cu diffused to the surface when whole of Co-W-P (W=0 and 11wt.%) layer was oxidized in high temperature with air condition. The results indicate that oxidized layer of Co-W-P deposit has no barrier effect for Cu. In Co-W-P deposit in the condition of high W content (W=23wt.%), an unoxidized layer still remained and only a small amount of Cu was detected on the surface. We confirmed that Co-W-P (W=23wt.%) was difficult to oxidize and Cu diffusion was suppressed by preventing oxidization of the Co-W-P deposit.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122213831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Comparison of Low Temperature Sinterability of Silver Micro-particles in Epoxy-based Binders Containing Several Mercaptocarboxylates 含几种巯基羧酸酯的环氧基粘结剂中银微粒低温烧结性能的比较
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733550
Shiho Nakazawa, M. Inoue
{"title":"Comparison of Low Temperature Sinterability of Silver Micro-particles in Epoxy-based Binders Containing Several Mercaptocarboxylates","authors":"Shiho Nakazawa, M. Inoue","doi":"10.23919/ICEP.2019.8733550","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733550","url":null,"abstract":"Epoxy-based electrically conductive pastes containing silver micro-fillers composed with several types of mercaptocarboxylates were prepared. Although low temperature sintering of silver micro-fillers could be successfully promoted within the epoxy-based binder, their electrical resistivity was quite different depending on molecular structure of the mercaptocarboxylates. The functional groups of this reagent play an important role to enhance surface diffusion of silver. However, necking of the silver fillers was insufficiently induced when the reagents that have relatively high decomposition temperature was used as a constituent of the binder. Molecular design of the promoters is essential to induce low temperature sintering of silver micro-fillers within polymer-based binders.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131398259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mixed Mode Tension Test of Underfills 下填土混合模态拉伸试验
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733486
H. Yamaguchi, T. Enomoto
{"title":"Mixed Mode Tension Test of Underfills","authors":"H. Yamaguchi, T. Enomoto","doi":"10.23919/ICEP.2019.8733486","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733486","url":null,"abstract":"In flip-chip packages (FCPKG), underfill (UF) is applied to reinforce solder bumps and enhance reliability of the package. Loading mode around cracks in UF is divided into tension (Mode I) and shear (Mode II). These two modes occur depending on the external load and the component structures. As for real components, these two modes are usually mixed. For higher precision of analyses and material design, it is essential to evaluate fracture toughness for each mixture rate of Mode I/ Mode II.Fracture toughness and fracture mode are influenced by mode mixture rate of the load, resin layer thickness as well as resin ingredients. We investigated the relationship between these factors. Mixed mode tension tests have been conducted for UF samples with different filler content and compound. Measurements were conducted at several different angles. Maximum load values were measured and fracture modes were observed.Most of specimens showed interfacial delamination, but lower angle (higher rate of mode I) induces bulk cohesive fracture and gives lower load toughness. High resin content increases max load value, and elastomer additive reinforces interfacial adhesion. Besides, resin layer thickness has relation with the fracture mode.Through this study, we obtained relationship between loading mode and fracture mode, and toughness enhancement effect of elastomer additive.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116507760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Faced Bondable Leadframe Design: Maximizing Leadframe Usage and Purpose 双面可粘合引线框架设计:最大限度地提高引线框架的使用和目的
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733560
Ernesto P. Rafael, Dolores Babaran-Milo
{"title":"Two-Faced Bondable Leadframe Design: Maximizing Leadframe Usage and Purpose","authors":"Ernesto P. Rafael, Dolores Babaran-Milo","doi":"10.23919/ICEP.2019.8733560","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733560","url":null,"abstract":"As semiconductor industries continue to grow and the demand for quadflat pack no lead (QFN) packages dramatically increased, introduction of either technology enablers or derivatives are also expected to ramp up. This paper focused on derivative products that are packaged on a standard QFN structure. These types of derivative package require less to zero development activities that continue to contribute high volume manufacturing. With the drive to strengthen the core value of innovation, this presentation will discuss a proposed design of low cost leadframe that can save production cost and improve productivity. This is a two-faced bondable leadframe design under intellectual property (IP) application# 15/985,380. This two-faced bondable leadframe design where two sides - top and bottom of the leadframe can be used as bondable area primarily for wirebonding interconnects. With this cost effective material, multiple fabrication of leadframe can be reduced.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134061579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability Assessment of WLCSP using Energy Based Model with Inelastic Strain Energy Density 基于非弹性应变能密度能量模型的WLCSP可靠性评估
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733436
Y. C. Lee, K. Chiang
{"title":"Reliability Assessment of WLCSP using Energy Based Model with Inelastic Strain Energy Density","authors":"Y. C. Lee, K. Chiang","doi":"10.23919/ICEP.2019.8733436","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733436","url":null,"abstract":"Reliability is one of the important issues in electronic package components, and some reliability tests, such as thermal cycling test (TCT), must be passed before mass production. However, performing these reliability tests takes a lot of time and money, many researchers have introduced simulation techniques to reduce the number of experiments and significantly reduce the development time to save costs. We will fix the size of the critical mesh at a specific location on the solder ball and use this fixed mesh size in each finite element model. In this study, simulation results will be used in conjunction with modified energy based model and strain-based model to predict solder joint reliability. The results show that the difference between the experimental data and the simulation is within 10% or 100 cycles. Therefore, the simulation method proposed in this study is reliable and can successfully predict the reliability of electronic packaging.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132058868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Study of Gate Bias Voltage for Preventing Threshold Shift of SiC–MOSFET Body Diode during Transient Temperature Measurements 瞬态温度测量中防止SiC-MOSFET体二极管阈值移位的门偏置电压研究
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733440
F. Kato, Shinji Sato, K. Koui, H. Tanisawa, H. Hozoji, H. Yamaguchi
{"title":"Study of Gate Bias Voltage for Preventing Threshold Shift of SiC–MOSFET Body Diode during Transient Temperature Measurements","authors":"F. Kato, Shinji Sato, K. Koui, H. Tanisawa, H. Hozoji, H. Yamaguchi","doi":"10.23919/ICEP.2019.8733440","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733440","url":null,"abstract":"In this paper, a method for determining gate bias voltage condition in transient temperature measurement using SiC-MOSFET body diode is reported. The Vg–Vsd characteristic of the device is investigated and there is a plateau portion where the Vsd did not change against the change of Vg. Transient temperature measurement using the body diode become possible under the gate bias condition of the plateau portion. This method was applied to three devices with different characteristics, and it was confirmed that transient temperature measurement is possible by selecting appropriate Vg according to each device characteristics. The transient temperature of each module in which these three devices were mounted in the same structure package was measured. The three transient temperature graphs agree well, and the three structure function graphs also agree well. By using this method, it is possible to quickly determine parameters of transient thermal resistance analysis for an unknown device.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133061487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization of Thermal-Electric Performance of Silicon Power MOSFET Inverter Using Coupled Field Analysis 用耦合场分析表征硅功率MOSFET逆变器的热电性能
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733567
Yanyan Liao, Y. Shen, H. Cheng, W. Chen
{"title":"Characterization of Thermal-Electric Performance of Silicon Power MOSFET Inverter Using Coupled Field Analysis","authors":"Yanyan Liao, Y. Shen, H. Cheng, W. Chen","doi":"10.23919/ICEP.2019.8733567","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733567","url":null,"abstract":"In this paper, a coupled electric-thermal model is proposed to estimate the power loss and thermal performance of power module and three-phase inverter. First, the electrical extraction software is used to obtain parasitic parameters of the package. Then, the temperature field of the package is simulated under certain power by using computational fluid dynamics (CFD). Finally, the results of the electrical extraction and the CFD model are imported into the circuit simulation software to establish an equivalent circuit model for coupled calculation of conduction loss and switching loss under certain boundary condition. The results of the power loss and temperature field are also compared with the experimental data.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133025286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct bonding with Ni-P finished DBC substrate with sinter Ag micro-sized particles 烧结银微粒与Ni-P成品DBC衬底直接结合
2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-01 DOI: 10.23919/ICEP.2019.8733517
Chuantong Chen, Zheng Zhang, Takuya Misaki, S. Nagao, K. Suganuma
{"title":"Direct bonding with Ni-P finished DBC substrate with sinter Ag micro-sized particles","authors":"Chuantong Chen, Zheng Zhang, Takuya Misaki, S. Nagao, K. Suganuma","doi":"10.23919/ICEP.2019.8733517","DOIUrl":"https://doi.org/10.23919/ICEP.2019.8733517","url":null,"abstract":"Sinter Ag joining as an attractive die attach material received more and more attention. Usually, to obtained an excellent strength bonding, sinter Ag joining need contact with the Ag, Au metallization layer on both chips and substrates. The electro- and electroless-plated Ni(P) technology was well developed and widely used. This work focuses on the bonding quality and high temperature reliability of sintering micron-sized Ag particles on an electro-less Ni-P plated substrate. High die shear strength of sinter Ag joining structure was obtained, which over 40 MPa with a sintering temperature 300Υ in air and pressure-less conditions. In addition, the high temperature aging test also was investigated at the aging temperature 250Υ for 500 h. The die shear strength keeps 30 MPa after 500h aging. The bonding mechanism of sinter Ag joining on the electro-less Ni-P plated structure was discussed by SEM, EDS analysis.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2019-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121698347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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