Direct bonding with Ni-P finished DBC substrate with sinter Ag micro-sized particles

Abstract

Sinter Ag joining as an attractive die attach material received more and more attention. Usually, to obtained an excellent strength bonding, sinter Ag joining need contact with the Ag, Au metallization layer on both chips and substrates. The electro- and electroless-plated Ni(P) technology was well developed and widely used. This work focuses on the bonding quality and high temperature reliability of sintering micron-sized Ag particles on an electro-less Ni-P plated substrate. High die shear strength of sinter Ag joining structure was obtained, which over 40 MPa with a sintering temperature 300Υ in air and pressure-less conditions. In addition, the high temperature aging test also was investigated at the aging temperature 250Υ for 500 h. The die shear strength keeps 30 MPa after 500h aging. The bonding mechanism of sinter Ag joining on the electro-less Ni-P plated structure was discussed by SEM, EDS analysis.