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2010 International Symposium on Signals, Systems and Electronics最新文献

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Study of electronmagnetic pulse propagation in ionosphere using 2D PSTD 利用二维PSTD研究电磁脉冲在电离层中的传播
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607030
Dan Yang, Hai-jun Fu, C. Liao
{"title":"Study of electronmagnetic pulse propagation in ionosphere using 2D PSTD","authors":"Dan Yang, Hai-jun Fu, C. Liao","doi":"10.1109/ISSSE.2010.5607030","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607030","url":null,"abstract":"In this paper, 2D the pseudo-spectral time domain (PSTD) algorithm is applied to simulate propagation of line-source in each layer of ionosphere, which is used to solve the equations of cold plasma. The excitation source is applied to eliminate Gibbs phenomenon, which is used by a compact wave source condition. The results are significance to propagation of line-source in ionosphere.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133486267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A fully integrated differential double frequency wide tuning range CMOS LC VCO for 2.4GHz IEEE802.15.4/ZigBee 完全集成的差分双频宽调谐范围CMOS LC压控振荡器，适用于2.4GHz IEEE802.15.4/ZigBee
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607073
Fan Xiang-ning, Zeng Jun, Li Bin, Zhu Weiwei, C. Xiaoguang
{"title":"A fully integrated differential double frequency wide tuning range CMOS LC VCO for 2.4GHz IEEE802.15.4/ZigBee","authors":"Fan Xiang-ning, Zeng Jun, Li Bin, Zhu Weiwei, C. Xiaoguang","doi":"10.1109/ISSSE.2010.5607073","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607073","url":null,"abstract":"A fully integrated double frequency differential LC voltage controlled oscillator (VCO), used in the frequency synthesizer of 2.4GHz IEEE802.15.4/ZigBee Wireless Sensor Network (WSN), is designed and implemented based on TSMC 0.18μm RF CMOS process with low power dissipation and wide tuning range. The core circuit adopts complementary differential negative resistance LC oscillator structure and is biased by current source. A 3 bits switch capacitor array is used to provide extra tuning range. The output buffer of common source structure is of decent reverse isolation. The layout area is 700μm×900μm. With a 1.8V supply voltage, post-simulation shows that the achieved tuning range, along with the phase noise performance, can perfectly compensate the deviation due to process corners. Measurement results of the chip indicate that tuning range is 24% and phase noise of −121.12dBc/Hz is obtained at 3MHz offset with the carrier of 4.8GHz. And the operating current of core circuit is only 2mA.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"794 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114737522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Relation between dielectric spacer thickness and absorption feature in metamaterials absorber 超材料吸收体中介电间隔层厚度与吸收特性的关系
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607051
Tao Wang, Lu Wang, Y. Nie, R. Gong
{"title":"Relation between dielectric spacer thickness and absorption feature in metamaterials absorber","authors":"Tao Wang, Lu Wang, Y. Nie, R. Gong","doi":"10.1109/ISSSE.2010.5607051","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607051","url":null,"abstract":"We investigated the influence of dielectric spacer thickness on the metamaterials absorber at microwave frequency. The absorption feature was demonstrated and characterized by the numerical simulations and experiments. The thickness of FR4 spacer was varied to examine the electromagnetic response of the short and long wires structure. It was found that there existed two different absorption mechanisms which were concerned with dielectric spacer thickness. Related explanations and discussions were provided in this paper.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123301834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improvement the Q-factor of multi-band inductor with 90 μm silicon substrate on plastic 用90 μm硅衬底改进了塑料多带电感的q系数
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607110
H. M. Chang, H. Kao, S. Shih, Y. C. Lee, C. Ke, L. Chang, C. H. Wu, J. S. Fu, N. Karmakar
{"title":"Improvement the Q-factor of multi-band inductor with 90 μm silicon substrate on plastic","authors":"H. M. Chang, H. Kao, S. Shih, Y. C. Lee, C. Ke, L. Chang, C. H. Wu, J. S. Fu, N. Karmakar","doi":"10.1109/ISSSE.2010.5607110","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607110","url":null,"abstract":"This paper presents the multi-band inductor with 0.18 μm CMOS technology on plastic achieves high Q-factor and small size for multiband applications. The multi-band inductor on VLSI-standard Si Substrate is operated at ultra-wide band range. The operation frequencies are near 3 GHz, 4 GHz, 7.5 GHz and 9 GHz of the Q-factor are 6.5, 6.7, 8 and 11.5 with the inductance 2.1, 1.6, 1.1, 0.6 nH, respectively. After thinning-down the Si substrate to 90 μm and mounting on plastic, the Q-factor can improve 25~31% without changing the inductance due to reducing the parasitic effect from Si-substrate.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124938179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of integrated differential balun circuits 集成差动平衡电路的设计
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5606955
Liguo Sun, Yinchao Chen, K. Sun, Wentao Wu
{"title":"Design of integrated differential balun circuits","authors":"Liguo Sun, Yinchao Chen, K. Sun, Wentao Wu","doi":"10.1109/ISSSE.2010.5606955","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5606955","url":null,"abstract":"In this paper, a practical 50–100 Ω balun, based on the principle of transformers, was designed and fabricated, which was printed on the copper cladded FR4 PCB. First, a full wave model of the balun was designed using ADS; then, the fabricated structure was measured for the insertion loss, phase difference, and amplitude imbalance. It is found the designed balun is excellently in agreement with the simulation results.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123841833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Temperature-dependent device behavior in advanced CMOS technologies 先进CMOS技术中与温度相关的器件行为
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5606938
Xiaochun Li, Jialing Tong, Junfa Mao
{"title":"Temperature-dependent device behavior in advanced CMOS technologies","authors":"Xiaochun Li, Jialing Tong, Junfa Mao","doi":"10.1109/ISSSE.2010.5606938","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5606938","url":null,"abstract":"As technology scales down, more transistors integrate in a single die and the thermal issue becomes a major concern. High operation temperature degrades performance of MOS devices and induce reliability problem. In this paper, the temperature dependence of MOS drain current is analyzed in both linear and saturation regions. It is shown that the drain current is invariable in some specific operation points but may increase or decrease in other operation points with the temperature fluctuation. These temperature-insensitive operation points are derived with analytical formulas and verified with SPICE simulation in 180-nm CMOS technology. In linear region, the temperature-invariant drain current requires a linear relationship between gate-source voltage and drain-source voltage. In saturation region, the drain current mainly relies on gate-source voltage and the temperature-insensitive gate-source voltage is a constant for a given technology. Consequently, the supply voltage can be optimized for temperature-variation-insensitive performance, which is about 42% lower than the nominal supply voltage in a 180-nm CMOS technology.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124229027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A novel dual frequency notched UWB antenna with dual L-shape slots 一种新型双l形槽双频陷波超宽带天线
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5606992
W. Qin, Juan Li
{"title":"A novel dual frequency notched UWB antenna with dual L-shape slots","authors":"W. Qin, Juan Li","doi":"10.1109/ISSSE.2010.5606992","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5606992","url":null,"abstract":"A planar UWB monopole antenna with double notch frequency bands is presented. The proposed antenna consists of a planar monopole antenna and two L-shape slots which are used to generate two notch frequency bands. The bandwidth of the antenna is from 2.5 to 10.75GHz, while the proposed antenna has two notch bands of 3.35–3.75GHz and 4.85–6.1GHz, which cover 3.5GHz WIMAX band from 3.4GHz to 3.69GHz and 5.5 GHz WLAN band from 5.15GHz to 5.825GHz, respectively. The parameters determining the antenna's band notched characteristic are discussed.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126289905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A novel compact horizontally polarized omni-directional antenna 一种新型紧凑型水平极化全向天线
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607094
C. Jiang, X. Dai, Y. Jiao
{"title":"A novel compact horizontally polarized omni-directional antenna","authors":"C. Jiang, X. Dai, Y. Jiao","doi":"10.1109/ISSSE.2010.5607094","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607094","url":null,"abstract":"A novel compact omni-directional antenna with horizontally polarized is proposed in this paper. The proposed antenna has a small size in dimension, and can easily change the operate frequency band from 1.7GHz to 2.4GHz without increase or decrease antenna size. The simple structure has the conceptual configuration of the horizontal loop current on perfect electric conductor plane. The antenna is designed, fabricated and measured, and found to match well with predictions. Measured results exhibit good performance of return loss and non-circularity of horizontal plane radiation pattern.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129369429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Design of a 118-GHz sub-harmonic mixer using foundry diodes 采用代工二极管的118 ghz次谐波混频器的设计
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607108
Zhe Chen, Bo Zhang, Yong Fan, ShiXi Zhang, Xiaofan Yang
{"title":"Design of a 118-GHz sub-harmonic mixer using foundry diodes","authors":"Zhe Chen, Bo Zhang, Yong Fan, ShiXi Zhang, Xiaofan Yang","doi":"10.1109/ISSSE.2010.5607108","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607108","url":null,"abstract":"The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113–123-GHz, with 6 mW of local oscillator (LO) power. At 118 GHz, a DSB conversion loss of 12.6 dB is measured with 8 mW of LO power.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129486503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A slot antenna with band-notched coupling strips for UWB application 一种用于超宽带应用的带缺口耦合带的槽天线
2010 International Symposium on Signals, Systems and Electronics Pub Date : 2010-10-21 DOI: 10.1109/ISSSE.2010.5607067
M. Zhang, Yingzeng Yin, Lehu Wen, Wenchao Xiao, Yan Wang
{"title":"A slot antenna with band-notched coupling strips for UWB application","authors":"M. Zhang, Yingzeng Yin, Lehu Wen, Wenchao Xiao, Yan Wang","doi":"10.1109/ISSSE.2010.5607067","DOIUrl":"https://doi.org/10.1109/ISSSE.2010.5607067","url":null,"abstract":"A compact ultra-wideband (UWB) slot antenna with band-notched characteristic is proposed in this paper. The fabricated antenna consists of a three-arm fork-like metal patch fed by a 50 Ω coplanar waveguide (CPW) transmission line, a rectangular ground with a semicircular slot and a pair of shorting strips inserted in the semicircular slot, which creates one notched band. By adjusting the length, width of the two coupling strips and the distance between them, a band-rejected filter characteristic at the wireless local area network (WLAN) band can be obtained. The experimental results show that the fabricated antenna, with a compact size of 30×25mm2, has an ultra-wide impedance bandwidth from 3.1 to 10.6 GHz for VSWR<2 except a stop band for 5.15–5.825 GHz. The proposed antenna gives bidirectional radiation pattern in the E-plane and omni-directional radiation pattern in the H-plane and the gains are stable over the operating band except the notched band.","PeriodicalId":211786,"journal":{"name":"2010 International Symposium on Signals, Systems and Electronics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124611037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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