H. Kubota, T. Tashiro, Tsuyoshi Hiyayu, T. Chikushima, T. Fujiyoshi, R. Miyagawa, M. Onuki
{"title":"AC-photoconductivity of amorphous gallium phosphide (a-GaP) formed by nitrogen ion beam assisted deposition","authors":"H. Kubota, T. Tashiro, Tsuyoshi Hiyayu, T. Chikushima, T. Fujiyoshi, R. Miyagawa, M. Onuki","doi":"10.1109/WCPEC.1994.520656","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520656","url":null,"abstract":"Because amorphous III-V compounds have various localized states that play important roles in carrier trapping and scattering centers, and strongly degrade electrical performance, the formation process for a-GaP is considered for reducing these states, effectively and selectively. We report in this paper that the valence-band tail state has successfully disappeared by using nitrogen ion-beam-assisted deposition, and then the mobility band gap has expanded to the 3 eV range. The gap states are also cleared for a-GaP:N according to accurate AC photoconductivity technique.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91098083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Photovoltaic rural electrification in France","authors":"A. Claverie, P. Courtiade, P. Vezin","doi":"10.1109/WCPEC.1994.521680","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.521680","url":null,"abstract":"The promotional programmes sponsored by the Agency for Environment and Energy Management (ADEME) to encourage the use of off-grid photovoltaic power systems have evolved over a period of ten years. From the first year-round residences that were equipped in the early 1980s, to those that are now participating in the programme set up jointly by ADEME and the electricity utility Electricite de France (EDF), the notions of service quality and longevity are now better adapted to users' needs. This article outlines the evolution of ADEME's approach in mainland France, describes the programme undertaken in the French territory of New Caledonia, and lastly summarises the results of a field survey of users of stand-alone photovoltaic systems in the French overseas department of Guadeloupe.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91206794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ga/sub x/In/sub 1-x/As thermophotovoltaic converters","authors":"M. Wanlass, J. Ward, K. Emery, T. Coutts","doi":"10.1109/WCPEC.1994.520542","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520542","url":null,"abstract":"Preliminary research into the development of single-junction Ga/sub x/In/sub 1-x/As thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50 -0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AMO efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90464012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Identifying the recombination losses that limit V/sub oc/ in thin silicon solar cells by bifacial spectral response measurements","authors":"Y. Bai, J. Phillips, A. Barnett","doi":"10.1109/WCPEC.1994.520217","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520217","url":null,"abstract":"This paper describes techniques to identify recombination losses in solar cells. In particular, bifacial spectral response measurements made on operating devices can be used to separate the base and emitter contributions as well as gain insight into the surface passivation contributions to the diode saturation current density J/sub 0/. The contributions of device thickness, surface passivation and contacts to J/sub 0/ are examined by varying the geometry. This separation of the contributions to J/sub 0/ is integral to the design and fabrication of efficient thin silicon solar cells.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76889649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Distributed photovoltaic demand-side generation: an economic evaluation for electric utilities","authors":"G. Leng, J. Martín","doi":"10.1109/WCPEC.1994.520081","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520081","url":null,"abstract":"From an electric utility's viewpoint, distributed photovoltaic demand-side generation (PV-DSG) systems can be evaluated in a similar manner to other demand-side management (DSM) technologies. This study evaluates the economic benefits of PV-DSG systems, using hourly utility cost and performance data, as a function of the utility's load duration curve (LDC). The analysis focuses on one utility, New England Electric System (NEES), USA. Actual utility hourly system load data for 1991 and corresponding PV output data from a 2.2 kW (DC) grid-connected residential PV system, installed as part of the NEES Gardner project, are used for this study. At NEES's weighted average cost of capital of 8.78% the energy and capacity benefit values calculated equate to an allowable installed PV system cost of $2.41/watt. A social discount rate of 3% allows for an even higher installed cost-per-watt figure of $4.72. The higher the, allowable installed cost, the easier it will be for the PV industry to enter the utility market. These results are represented graphically as a target to emphasize the importance of the utility target market to the PV industry.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76936389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Lagos, A. Moehlecke, J. Alonso, I. Toblas, A. Luque
{"title":"Contamination and gettering evaluation by lifetime measurements during single crystal cell processing","authors":"R. Lagos, A. Moehlecke, J. Alonso, I. Toblas, A. Luque","doi":"10.1109/WCPEC.1994.520529","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520529","url":null,"abstract":"In this work, the effects of contamination and gettering through two fabrication processes of monocrystalline Si solar cells are evaluated using lifetime measurements. The processes characterized were developed to produce n/sup +/pp/sup +/ and p/sup +/nn/sup +/ solar cells with phosphorus/aluminum and boron/phosphorus. The experiments indicate that in our laboratory environment, the lifetime degradation is influenced by the number of thermal processes. The gettering produced by aluminum in n/sup +/pp/sup +/ cell processing and by phosphorus (with heavy doping) in p/sup +/nn/sup +/ cell processing enhances the base lifetime. Slight phosphorus diffusion without supersaturation conditions, performed in the n/sup +/pp/sup +/ process, does not produce sufficient gettering and has lower effect on the lifetime than boron diffusions that produce some gettering too. Also, we discovered that gettering is strongly reduced when local aluminum back surface field regions are formed in the rear face in a failed attempt of reducing the BSF recombination.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75067134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Transient response of gallium arsenide and silicon solar cells under laser pulse","authors":"R. Jain, G. Landis","doi":"10.1109/WCPEC.1994.520732","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520732","url":null,"abstract":"Solar cells can be used as receivers in laser power beaming applications. Power beamed to a photovoltaic array could power a satellite, an orbital transfer vehicle or a lunar base. Understanding solar cell response to the pulsed output of a free-electron laser (FEL) is important for evaluation of power-beaming applications. In this work we investigate the time response of gallium arsenide and silicon solar cells to a 25 nS monochromatic pulse input. The PC-1D computer code is used to analyze the cell current during and after the pulse for various conditions. For GaAs cells, current decay was studied at 511 nm, 840 nm, and 870 nm. Most of the results have been calculated for a peak intensity of 50 W/cm/sup 2/, which corresponds to nearly 1000 suns peak concentration. Compared to gallium arsenide, silicon has longer minority carrier lifetime and weaker optical absorption, resulting in longer characteristic time constants. Si cell performance was studied at 900, 950, and 1060 nm wavelengths.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78316035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Preparation of CuInSe/sub 2/ thin films using electrodeposited In/Cu metallic layer","authors":"Yirop Kim, Y. Lee, H. Kim, Jinsoo Song","doi":"10.1109/WCPEC.1994.519843","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.519843","url":null,"abstract":"CuInSe/sub 2/ thin films were prepared by a two-stage process: electrodeposition of In/Cu metallic layer and selenization. Effects of current density in In electrodeposition on properties of In/Cu metallic layer and those of CuInSe/sub 2/ thin films were investigated. For lower current densities, In/Cu metallic layer had rough surface with formation of droplets, but smooth surfaces appeared for higher current densities. The compositional nonuniformity became severe for lower current densities, and the amount of loss of indium during the selenization decreased with increasing of current density. It was found that the compositional nonuniformity in the In/Cu metallic layer was caused by formation of droplets and was dependent on the composition nonuniformity in In/Cu metallic layers. Thus, in the case of the highest current density of 80 mA/cm/sup 2/, homogeneous CuInSe/sub 2/ thin films without second phases were prepared. The (112) preferred orientation of CuInSe/sub 2/ thin films was influenced by its composition.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75129056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
O. Kawasaki, S. Matsuda, Y. Yamamoto, Y. Kiyota, Y. Uchida
{"title":"Study of solar simulator calibration method and round robin calibration plan of primary standard solar cell for space use","authors":"O. Kawasaki, S. Matsuda, Y. Yamamoto, Y. Kiyota, Y. Uchida","doi":"10.1109/WCPEC.1994.521635","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.521635","url":null,"abstract":"The electrical characteristics of solar cells for space use had been calibrated by European and American calibration facilities. These calibration facilities have been giving satisfactory results for a primary standard of solar cell for space and terrestrial use, and are recognized in the world. The authors have compared the short circuit current of standard solar cells calibrated by balloon flight and space shuttle methods with those calibrated by the JQA solar simulator method. The results showed almost equivalent values. Therefore, the authors believe that the JQA solar simulator method is an effective calibration method together with balloon flight, aircraft and space shuttle methods. In this paper, the authors introduce the JQA solar simulator method and the round-robin calibration plan of a primary standard solar cell for space power use.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75705542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A comparison of photovoltaic module performance evaluation methodologies for energy ratings","authors":"B. Kroposki, K. Emery, D. Myers, L. Mrig","doi":"10.1109/WCPEC.1994.520096","DOIUrl":"https://doi.org/10.1109/WCPEC.1994.520096","url":null,"abstract":"The rating of photovoltaic (PV) modules has always been a controversial topic in the PV community. There is no industry standard methodology to evaluate PV modules for energy production. This issue must be discussed and resolved for the benefit of system planners, utilities, and other consumers. Several methodologies are available to rate a module's peak power, but do any accurately predict energy output for flat-plate modules? This paper analyzes the energy performance of PV modules using six different energy calculation techniques and compares the results to the measured amount of energy produced. The results indicate which methods are the most effective for predicting energy output in Golden, Colorado, under prevailing meteorological conditions.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74680199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}