AC-photoconductivity of amorphous gallium phosphide (a-GaP) formed by nitrogen ion beam assisted deposition

Because amorphous III-V compounds have various localized states that play important roles in carrier trapping and scattering centers, and strongly degrade electrical performance, the formation process for a-GaP is considered for reducing these states, effectively and selectively. We report in this paper that the valence-band tail state has successfully disappeared by using nitrogen ion-beam-assisted deposition, and then the mobility band gap has expanded to the 3 eV range. The gap states are also cleared for a-GaP:N according to accurate AC photoconductivity technique.