氮离子束辅助沉积形成的非晶磷化镓(a-GaP)的交流光电性

H. Kubota, T. Tashiro, Tsuyoshi Hiyayu, T. Chikushima, T. Fujiyoshi, R. Miyagawa, M. Onuki
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引用次数: 0

摘要

由于非晶态III-V化合物具有多种局域态,这些局域态在载流子捕获和散射中心起着重要作用,并且会严重降低电性能,因此a-GaP的形成过程被认为是有效和选择性地降低这些态的过程。本文报道了氮离子束辅助沉积成功地消除了价带尾态,迁移率带隙扩大到3ev范围。根据精确的交流光导技术,a-GaP:N的间隙态也被清除。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
AC-photoconductivity of amorphous gallium phosphide (a-GaP) formed by nitrogen ion beam assisted deposition
Because amorphous III-V compounds have various localized states that play important roles in carrier trapping and scattering centers, and strongly degrade electrical performance, the formation process for a-GaP is considered for reducing these states, effectively and selectively. We report in this paper that the valence-band tail state has successfully disappeared by using nitrogen ion-beam-assisted deposition, and then the mobility band gap has expanded to the 3 eV range. The gap states are also cleared for a-GaP:N according to accurate AC photoconductivity technique.
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