Ga/sub x/In/sub 1-x/As热光伏转换器

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Pub Date : 1994-12-05 DOI:10.1109/WCPEC.1994.520542

M. Wanlass, J. Ward, K. Emery, T. Coutts

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引用次数: 9

摘要

综述了单结Ga/sub -x/ In/sub - 1-x/As热光伏(TPV)电源变换器的初步研究进展。器件结构外延生长在单晶InP衬底上。根据模型计算，考虑了0.50 -0.74 eV的变换器带隙。据报道，1太阳，AMO效率为12.8%的晶格匹配，0.74 ev转换器。具有较低带隙的变换器是用晶格不匹配、成分梯度结构制造的。功能TPV变换器具有良好的性能特征，其带隙低至0.5 eV。

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Ga/sub x/In/sub 1-x/As thermophotovoltaic converters

Preliminary research into the development of single-junction Ga/sub x/In/sub 1-x/As thermophotovoltaic (TPV) power converters is reviewed. The devices structures are grown epitaxially on single-crystal InP substrates. Converter band gaps of 0.50 -0.74 eV have been considered in accordance with modeling calculations. A 1-sun, AMO efficiency of 12.8% is reported for a lattice-matched, 0.74-eV converter. Converters with lower band gaps are fabricated using lattice-mismatched, compositionally graded structures. Functional TPV converters with good performance characteristics have been demonstrated for band gaps as low as 0.5 eV.

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Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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