通过双面光谱响应测量确定薄硅太阳能电池中限制V/sub / oc/的复合损耗

Y. Bai, J. Phillips, A. Barnett
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引用次数: 5

摘要

本文描述了识别太阳能电池中重组损失的技术。特别是,在操作器件上进行的双面光谱响应测量可用于分离基极和发射极的贡献,以及深入了解表面钝化对二极管饱和电流密度J/sub 0/的贡献。通过改变几何形状,考察了器件厚度、表面钝化和接触对J/sub 0/的贡献。这种对J/sub / 0/贡献的分离对于高效薄硅太阳能电池的设计和制造是不可或缺的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Identifying the recombination losses that limit V/sub oc/ in thin silicon solar cells by bifacial spectral response measurements
This paper describes techniques to identify recombination losses in solar cells. In particular, bifacial spectral response measurements made on operating devices can be used to separate the base and emitter contributions as well as gain insight into the surface passivation contributions to the diode saturation current density J/sub 0/. The contributions of device thickness, surface passivation and contacts to J/sub 0/ are examined by varying the geometry. This separation of the contributions to J/sub 0/ is integral to the design and fabrication of efficient thin silicon solar cells.
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