Physica Status Solidi A-applications and Materials Science最新文献

{"title":"Gallium Oxide‐Based Field Effect Transistors","authors":"Pharyanshu Kachhawa, Sk. Masiul Islam, Nidhi Chaturvedi","doi":"10.1002/pssa.202400400","DOIUrl":"https://doi.org/10.1002/pssa.202400400","url":null,"abstract":"The growing interest for power electronics devices demands suitable materials which can perform in harsh conditions. Gallium oxide () has shown tremendous potential in high voltage, high temperature, and gassensing applications due to its unique material properties. is considered to be the next‐generation material for power electronics owing to ultrawide bandgap of 4.5–4.9 eV and high electric field of 8 MV cm<jats:sup>−1</jats:sup>. These material properties coupled with high‐power figure of merits make a superior material compared to GaN and SiC. Herein, state‐of‐the‐art development and recent breakthroughs in ‐based field‐effect‐ transistors (FETs) highlighting major ongoing research are reviewed. The review describes the material property, band structure, and ‐based field‐effect transistors in detail. Some promising applications capitalizing the epitaxial growth techniques along with the characteristics and performance of ‐based devices are also explained. The prime objective of this review is to provide an up‐to‐date scientific framework pertaining to this niche emerging research area followed by device processing. This survey reveals the potential of ‐based FETs for high‐ voltage and high‐power applications while several critical challenges have to be still overcome. Finally, insights are represented and future perspectives of ‐based transistors along with their hetero‐structures are discussed.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"12 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecularization of Metasurfaces for Multifunctional Ultrafast All‐Optical Terahertz Waves","authors":"Qiangguo Zhou, Qinxi Qiu, Yongzhen Li, Tuntan Wu, Wangchen Mao, Yanqing Gao, Yingjian Ren, Wei Zhou, Lin Jiang, Niangjuan Yao, Jingguo Huang, Zhiming Huang","doi":"10.1002/pssa.202400459","DOIUrl":"https://doi.org/10.1002/pssa.202400459","url":null,"abstract":"Hybrid metasurfaces incorporated by active materials hold great promise for state‐of‐the‐art terahertz functional devices. However, it is still a major challenge to achieve ultrafast, dynamic, and multifunctional effective control of THz waves via hybrid metasurfaces. Herein, a modulator consisting of split rings and cut‐wires is first demonstrated, with an amplitude of −35.6 dB at 0.524 THz. By embedding semiconductor silicon into specified locations to form a hybrid metasurface, the ultrastrong connectivity of the silicon bridges leads to rapid optical molecularization. Under photoexcitation, the frequency tuning range is 26.7%, the phase shifting reaches 357.5°, and the maximal modulation depth is 94.54%. Taking advantage of the rapid relaxation of photocarriers in the silicon bridges, the ultrafast frequency switching is within 1400 ps. More interestingly, by changing the positions of the silicon bridges, the frequency tuning range is further promoted to 60%, the phase shifting is 353.5°, the modulation depth of 100% is achieved, and the full recovery time is 1600 ps. Furthermore, the underlying mechanism of the ultrafast tuning process is elucidated. This work demonstrates the feasibility of all‐optical‐controlled hybrid metasurface to achieve multifunctional dynamic modulation of THz waves, which has tremendous potential for applications in optical switching, signal processing, and frequency conversion.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"32 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Process Model for SiC Oxidation for a Large Range of Conditions","authors":"Christoph Zechner, Anna Johnsson, Tamara Fidler, Patrick Schmid","doi":"10.1002/pssa.202400234","DOIUrl":"https://doi.org/10.1002/pssa.202400234","url":null,"abstract":"A comprehensive process model for 4H‐SiC oxidation is created and calibrated against a very large collection of experimental data. The model reproduces measured oxide thickness for Si‐face, C‐face, and a‐face SiC wafers, in the temperature range 950–1500 °C, in the pressure range 0.25–4.0 atm, in the thickness range 3–1600 nm, and for SiC doping ranging between 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> n‐type and 10<jats:sup>19</jats:sup> cm<jats:sup>−3</jats:sup> p‐type. The model is based on the Massoud model: Oxidation is driven by oxidants (O<jats:sub>2</jats:sub>, H<jats:sub>2</jats:sub>O) which are present in the gas phase, diffuse through the oxide, and form SiO<jats:sub>2</jats:sub> at the oxide–SiC interface. For thin oxides, the interface reaction rate includes empirical correction terms which add to the oxidation rate, and which asymptotically approach zero with increasing oxide thickness. For dry oxidation, a remarkable dependence on the O<jats:sub>2</jats:sub> partial pressure is discovered: For thick oxides, the oxidation rate scales linearly with the pressure, but the correction term for thin oxides scales with the square root of the pressure. This suggests that the atomistic processes responsible for the fast initial growth of oxides involve the splitting of O<jats:sub>2</jats:sub> molecules into two O atoms.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"48 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141719688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atomic Layer Deposited Al1−xNixO: Low Contact Resistivity Hole‐Selective Contact for Crystalline Silicon Solar Cells","authors":"Yang Hong, Xuanfei Kuang, Yongjuan Chen, Yao Xiao, Zongcun Liang","doi":"10.1002/pssa.202400387","DOIUrl":"https://doi.org/10.1002/pssa.202400387","url":null,"abstract":"Transition metal oxide (TMO)/crystalline silicon (c‐Si) junction‐based heterostructure crystalline silicon solar cells have emerged as a promising alternative to traditional silicon solar cells. However, the power conversion efficiency of c‐Si solar cells utilizing a nickel oxide (NiO<jats:sub><jats:italic>x</jats:italic></jats:sub>) hole transport layer (HTL) still lags behind those employing a fully developed TMO layer. This disparity may be attributed, at least in part, to inefficient hole extraction. Atomic layer deposited (ALD) aluminum nickel oxide (Al<jats:sub>1</jats:sub><jats:sub>−</jats:sub><jats:sub><jats:italic>x</jats:italic></jats:sub>Ni<jats:sub><jats:italic>x</jats:italic></jats:sub>O) films, synthesized using bis(<jats:italic>N,N′‐di‐t</jats:italic>‐butylacetamidinato)nickel(II) (NiAMD) and trimethylaluminum (TMA) as precursors, along with deionized water as a co‐reactant, have been observed to improve the contact properties with p‐type silicon compared to NiO<jats:sub><jats:italic>x</jats:italic></jats:sub>. Al<jats:sub>1−</jats:sub><jats:sub><jats:italic>x</jats:italic></jats:sub>Ni<jats:sub><jats:italic>x</jats:italic></jats:sub>O films with varying Al concentrations (0.25, 0.44, and 0.87) are examined for their contact performance on <jats:italic>p</jats:italic>‐Si, resulting in the lowest contact resistivity of 85 mΩ cm<jats:sup>2</jats:sup>. Optimized Al<jats:sub>1</jats:sub><jats:sub>−</jats:sub><jats:sub><jats:italic>x</jats:italic></jats:sub>Ni<jats:sub><jats:italic>x</jats:italic></jats:sub>O films exhibit superior hole extraction capability from p‐type silicon, leading to a remarkable conversion efficiency of 19.35% in the constructed <jats:italic>p</jats:italic>‐Si/Al<jats:sub>1</jats:sub><jats:sub>−</jats:sub><jats:sub><jats:italic>x</jats:italic></jats:sub>Ni<jats:sub><jats:italic>x</jats:italic></jats:sub>O/Ag solar cell. These findings underscore the advantages of utilizing ALD Al<jats:sub>1</jats:sub><jats:sub>−</jats:sub><jats:sub><jats:italic>x</jats:italic></jats:sub>Ni<jats:sub><jats:italic>x</jats:italic></jats:sub>O as a hole‐selective contact for crystalline <jats:italic>p</jats:italic>‐Si solar cells.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"61 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga2O3 Heterojunction with High Responsivity and Selectivity","authors":"Sola Woo, Taeeun Lee, Chang Woo Song, Jun Young Park, Yusup Jung, Jeongsoo Hong, Sinsu Kyoung","doi":"10.1002/pssa.202400310","DOIUrl":"https://doi.org/10.1002/pssa.202400310","url":null,"abstract":"A high‐performance self‐powered deep ultraviolet (DUV) photodetector based on the NiO/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> heterojunction is fabricated and analyzed. The NiO/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> heterojunction photodetectors are fabricated both with and without a post‐annealing process following NiO film deposition. Each photodetector structure is investigated through technology computer‐aided design simulations, including energy band diagram, trap density, and carrier concentration. The pristine self‐powered NiO/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> photodetector, lacking a post‐annealing process, exhibits partial Schottky contact formation between metal and NiO film, leading to performance degradation, including reduced responsivity, detectivity, and response time. On the other hand, the post‐annealed self‐powered NiO/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> photodetector demonstrates high performance such as a responsivity of 592.0 mA W<jats:sup>−1</jats:sup>, a detectivity of 4.30 × 10<jats:sup>12</jats:sup> Jones, and response times of 30.93 ms and 72.32 ms, respectively. Therefore, the fabricated NiO/β‐Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> photodetector shows a promising potential for various applications requiring DUV detection without an external voltage bias.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"1 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Illumination Spectrum on Dissociation Kinetics of Iron–Boron Pairs in Silicon","authors":"Oleg Olikh, Oleksandr Datsenko, Serhiy Kondratenko","doi":"10.1002/pssa.202400351","DOIUrl":"https://doi.org/10.1002/pssa.202400351","url":null,"abstract":"Photodissociation kinetics of iron–boron (FeB) pairs in boron‐doped Czochralski silicon is studied experimentally using different light sources. It is shown that the FeB dissociation rate depends not only on integrated light intensity and overall carrier generation rate, but also on spectral composition of illumination. The value of the material constant of dissociation <jats:italic>K</jats:italic> varies and has been determined to be within s. The investigation reveals an increase in the dissociation rate with increase in photon energy. The results indicate that recombination‐enhanced defect reaction is the primary factor in the second stage of pair dissociation.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"26 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Open‐Top Transparent TiO2 Nanotubes Photoanodes from Evaporated Ti Layers on Fluorine‐Doped Tin Oxide","authors":"Imgon Hwang, Patrik Schmuki, Anca Mazare","doi":"10.1002/pssa.202400335","DOIUrl":"https://doi.org/10.1002/pssa.202400335","url":null,"abstract":"Herein, the growth of transparent TiO<jats:sub>2</jats:sub> nanotube (NT) layers is investigated by complete self‐organized anodization of a metallic Ti layer on fluorine‐doped tin oxide glass, deposited by electron beam evaporation. An initiation‐free open‐top tube morphology can be obtained for such transparent TiO<jats:sub>2</jats:sub> NTs using an optimized second anodization approach combined with a post‐ultrasonication process. The photoelectrochemical properties of open‐top tubes exhibit notable enhancement, primarily attributed to their rapid electron‐transfer kinetics, with a ≈33% increase in the incident‐photon‐to‐electron conversion efficiency value (at 350 nm wavelength) in comparison to classical (initiation‐covered) NTs with a comparable morphology.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2012 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141614293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compound Semiconductors","authors":"Kwangseuk Kyhm, Jong Su Kim, Heonsu Jeon, Yong‐Hoon Cho","doi":"10.1002/pssa.202400418","DOIUrl":"https://doi.org/10.1002/pssa.202400418","url":null,"abstract":"","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"17 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiscale Simulation of CVD Diamond Growth on (1 0 0)‐, (1 1 1)‐, and (1 1 0)‐Oriented Faces","authors":"Audrey Valentin, Divine Regina Kamkoum‐Djouka, Ovidiu Brinza, Fabien Bénédic","doi":"10.1002/pssa.202400382","DOIUrl":"https://doi.org/10.1002/pssa.202400382","url":null,"abstract":"The growth of chemical vapor deposition diamond in microwave plasma ignited in H<jats:sub>2</jats:sub>/CH<jats:sub>4</jats:sub> gas mixture is investigated using a multiscale approach. The plasma composition and temperatures are determined as a function of the growth conditions using an axial one‐dimensional simulator. The growth process is then studied at the atomic scale using a kinetic Monte‐Carlo simulator developed for (1 0 0), (1 1 1), and (1 1 0) orientations. The calculated growth rates are then injected in a geometric model that predicts the final morphology of the crystal. The simulation of the growth on an etch pit shows that the time necessary to entirely fill the pit is around half an hour. The study of the growth on the three orientations reveals that the surface temperature and methane concentration influence the number, shape, and size of the islands when they appear. On the (1 0 0) surface, the formation of islands may be related to Stranski–Krastanov growth mode, whereas the (1 1 1) surface conducts to Frank–van der Merwe growth mode, and the (1 1 0) surface is governed by Volmer–Weber growth mode.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"94 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141585208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Current Saturation Behavior in GaN Polarization Superjunction Hybrid Diode","authors":"Yangming Du, Ekkanath Madathil Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui","doi":"10.1002/pssa.202300919","DOIUrl":"https://doi.org/10.1002/pssa.202300919","url":null,"abstract":"This is the first report on the current saturation behavior observed in the forward characteristics of polarization superjunction (PSJ)‐based hybrid PiN‐Schottky GaN power diodes fabricated on Sapphire. In the current saturation region, most of the applied anode voltage is dropped across the regions immediately adjacent to the edge of the doped P‐GaN region closest to the cathode. This significant potential drop occurs within a short distance, resulting in a high electric field and depletion of electrons, causing the current saturation behavior via velocity saturation in these PSJ hybrid diodes.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"2022 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141588499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}