Physica Status Solidi A-applications and Materials Science最新文献_第6页

Morphology Characterization and Refractive Index Analysis of Subsurface Ultrashort‐Pulsed Laser Modifications in ZnS ZnS 表面下超短脉冲激光修饰的形态特征和折射率分析

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-24 DOI: 10.1002/pssa.202400299

Eskil Einmo, Nikolai Tolstik, Christos Grivas, Maksim Demesh, Paraskevas Kontis, Irina T. Sorokina, Marisa Di Sabatino

{"title":"Morphology Characterization and Refractive Index Analysis of Subsurface Ultrashort‐Pulsed Laser Modifications in ZnS","authors":"Eskil Einmo, Nikolai Tolstik, Christos Grivas, Maksim Demesh, Paraskevas Kontis, Irina T. Sorokina, Marisa Di Sabatino","doi":"10.1002/pssa.202400299","DOIUrl":"https://doi.org/10.1002/pssa.202400299","url":null,"abstract":"A parameter study of ultrashort pulse laser‐induced modifications in the bulk of ZnS crystals is reported. Experimental results on these modifications and their dependence on the pulse energy, writing speed, and depth are presented, with an emphasis on cross‐sectional morphology and induced refractive index changes. Localized permanent material modifications have been inscribed in the bulk of the crystal using a laser with a center emission wavelength of 2.09 μm and a pulse duration of ≈4 ps. The morphology strongly depends on the laser and optical focusing parameters, in particular, on the pulse energy and processing speed, with a significant shift in depth dependence for short pulse‐to‐pulse separations. Depending on the applied pulse energy, distortions of the lateral profile of the refractive index changes appear in the form of oscillatory features in the transverse plane relative to the inducing laser beam. The true extent of the modified material is revealed by the alternating lateral profile with largest induced negative refractive index change, Δn, of −3.88 × 10−2 ± 0.18. Such parametric insight is of critical importance for the understanding and optimization of the fabrication process and for realizing compact 3D photonic devices in the bulk of materials in a reproducible manner.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"40 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141771421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation 为挤压光发电设计水平叠层氮化铝和介质芯横向准相位匹配通道波导

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-23 DOI: 10.1002/pssa.202400380

Hiroto Honda, Ryosuke Noro, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama

引用次数: 0

Optical Sensitive Detection of Cervical Cancer Based on Surface Plasmon Resonance Nanostructure 基于表面等离子体共振纳米结构的宫颈癌光敏检测技术

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-23 DOI: 10.1002/pssa.202300567

Malek G. Daher, Youssef Trabelsi, Ahmed Nabih Zaki Rashed, Ibrahim S. Yahia, Yogenra Kumar Prajapati, Abdulkarem H. M. Almawgani, Ahmad Alzahrani

{"title":"Optical Sensitive Detection of Cervical Cancer Based on Surface Plasmon Resonance Nanostructure","authors":"Malek G. Daher, Youssef Trabelsi, Ahmed Nabih Zaki Rashed, Ibrahim S. Yahia, Yogenra Kumar Prajapati, Abdulkarem H. M. Almawgani, Ahmad Alzahrani","doi":"10.1002/pssa.202300567","DOIUrl":"https://doi.org/10.1002/pssa.202300567","url":null,"abstract":"Cervical cancer is a disease that affects a lot of people all over the world. The success of treatment is significantly increased by early detection. The new surface plasmon resonance sensor (SPRS) described in this article is constructed from layers of silver, BaTiO3, and graphene, as well as a coupling prism. The transfer matrix (TM) approach is used to evaluate the SPRS structure. To obtain the highest sensitivity of the suggested SPRS, the thicknesses of the Ag and BaTiO3 and the number of Gr sheets are evaluated. Investigations are done on all factors of performance of the proposed device. Exemplary efficiency is achieved using 4 nm (BaTiO3) and 60 nm (Ag) materials. Three layers are chosen as the optimal amount of graphene after investigation. When the optimal thicknesses are employed, the suggested SPRS's greatest sensitivity of 300° RIU−1 has been attained. The suggested SPRS displays better sensitivity when compared to SPRS structures that have already been published in the literature. This SPRS is promising to be used in different biosensing applications due to its high performance.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"63 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141771429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor 用于硅基氮化镓高电子迁移率晶体管的金属有机化学气相沉积生长低温氮化铝栅极电介质

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-22 DOI: 10.1002/pssa.202400050

Anirudh Venugopalarao, Shantveer Kanta, Hareesh Chandrasekar, Aniruddhan Gowrisankar, Muralidharan R. Rengarajan, Digbijoy N. Nath, Srinivasan Raghavan

{"title":"Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor","authors":"Anirudh Venugopalarao, Shantveer Kanta, Hareesh Chandrasekar, Aniruddhan Gowrisankar, Muralidharan R. Rengarajan, Digbijoy N. Nath, Srinivasan Raghavan","doi":"10.1002/pssa.202400050","DOIUrl":"https://doi.org/10.1002/pssa.202400050","url":null,"abstract":"Gate dielectrics for gallium nitride (GaN) high electron mobility transistor (HEMT) technology have always been challenging because of the nonideal semiconductor–dielectric interface, which leads to electronic traps. Plasma‐enhanced chemical vapor deposition and atomic layer deposition are standard techniques, but they require surface treatment and post‐annealing to control these traps. This article explores metal organic chemical vapor deposition‐grown in situ aluminum nitride (AlN) as a gate dielectric. The interface is expected to be pristine as there is no change in the chamber environment. A thin (10 nm) AlN layer is deposited at a low temperature to minimize strain and prevent the formation of an unwanted conductive channel within the device. The electrical and structural properties of this AlN‐capped HEMT are compared to a standard GaN‐capped HEMT, including temperature‐dependent studies. The results show that the AlN‐capped HEMT retains a higher charge in the channel while having an order of magnitude lower gate leakage than the GaN‐capped sample. Furthermore, the AlN‐capped HEMT performs similarly to the GaN‐capped HEMT in terms of temperature‐dependent leakage, dynamic on‐resistance, and temperature coefficient of resistance.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"12 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimal Composition of the Sby(S1−x,Sex)3 Ternary Absorber for High Efficiency Solar Cells 用于高效太阳能电池的 Sby(S1-x,Sex)3 三元吸收器的最佳成分

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-22 DOI: 10.1002/pssa.202400288

Miriam M. Nicolás‐Marín, Jesús Roberto González‐Castillo, Maykel Courel‐Piedrahita, Inés Riech‐Méndez, Pedro Antonio Mijangos‐Alonzo, Osvaldo Vigil‐Galán

{"title":"Optimal Composition of the Sby(S1−x,Sex)3 Ternary Absorber for High Efficiency Solar Cells","authors":"Miriam M. Nicolás‐Marín, Jesús Roberto González‐Castillo, Maykel Courel‐Piedrahita, Inés Riech‐Méndez, Pedro Antonio Mijangos‐Alonzo, Osvaldo Vigil‐Galán","doi":"10.1002/pssa.202400288","DOIUrl":"https://doi.org/10.1002/pssa.202400288","url":null,"abstract":"Solar cells based on Sb2(S1−x,Sex)3 ternary compounds have shown the highest reported efficiency value compared to their Sb2Se3 and Sb2S3 counterparts in antimony chalcogenide technology. However, the reported record efficiencies for these new emergent solar cells are still well below the theoretical values according to their bandgap value or for the traditional solar cells in the thin film technology. This article presents an analysis regarding the optimal composition that guarantees an increase in efficiency in the manufacture of Sby(S1−x,Sex)3 solar cells, as well as the proposal of a new synthesis method that allows obtaining the ternary compound with the calculated optimal composition. From theoretical considerations, a composition of Sb1.85(S0.63,Se0.42)3 is obtained. This composition is equivalent to optimal values Se/(S + Se) = 0.4 and Sb/(S + Se) = 0.88. The results of the new proposed synthesis method are presented and discussed.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"85 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Technology Computer‐Aided Design Model for SiGe Oxidation and Ge Diffusion Along Oxide/SiGe Interfaces 硅锗氧化和锗沿氧化物/硅锗界面扩散的技术计算机辅助设计模型

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-20 DOI: 10.1002/pssa.202400235

Christoph Zechner, Nikolas Zographos

引用次数: 0

Temperature Effects on GaN/AlN Heterojunction in a Piezomagnetic and Piezoelectric Semiconductor Composite Fiber 压磁和压电半导体复合纤维中 GaN/AlN 异质结的温度效应

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-20 DOI: 10.1002/pssa.202400186

QiaoYun Zhang, JiaHao Xu, ZhiCai Song, Ning Tan

引用次数: 0

Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application 用于 pH 传感器应用的对称/非对称垂直电解质绝缘半导体隧道场效应晶体管对比分析

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-19 DOI: 10.1002/pssa.202400093

Aditya Kumar Singh Pundir, Girish Wadhwa, Pawandeep Kaur, Prashant Mani, Sheetal Bhandari

{"title":"Comparative Analysis of Symmetrical/Asymmetrical Vertical Electrolyte‐Insulated Semiconductor Tunnel FET for pH Sensor Application","authors":"Aditya Kumar Singh Pundir, Girish Wadhwa, Pawandeep Kaur, Prashant Mani, Sheetal Bhandari","doi":"10.1002/pssa.202400093","DOIUrl":"https://doi.org/10.1002/pssa.202400093","url":null,"abstract":"This study investigates symmetrical/asymmetrical vertical electrolyte‐insulated semiconductor Tunnel field effect transistors (TFETs) (SV‐EIS‐TFET/ASV‐EIS‐TFET) for their application as pH biosensors. On the basis of device‐level simulations, the underlying physics of all architectures is explored and the comparative biosensing abilities of pH biosensors are evaluated. A vertical electrolyte Bio‐TFET with overlapping electrodes is presented in this study. The pH response is measured by observing the change in drain current and potential when the pH of the injected solution transitions from a lower to a higher level. As an intrinsic semiconductor material, electrons and holes in the electrolyte represent mobile ions in the solution. The region of the electrolyte has an electron affinity of 1.32 eV, a bandgap of 1.12 eV, and a dielectric constant of 78. Double gate structures raise concerns about correctly aligning the right and left gates because of their sensitivity impact. An analysis of the effect of gate misalignment on biosensor surface potentials, drain currents, and transconductance is presented. Furthermore, pH value ranges of 1–14 are considered for various sensitivity parameters. Simulations are performed using Silvaco TCAD for the SV‐EIS‐TFET and ASV‐EIS‐TFET biosensors.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"15 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Defect Engineering for Enhanced Silicon Radiofrequency Substrates 用于增强型硅射频基板的缺陷工程学

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-19 DOI: 10.1002/pssa.202400215

Martin Perrosé, Yoann Baron, Baptiste Lefaucher, Pablo Acosta Alba, Jean‐Pierre Raskin

{"title":"Defect Engineering for Enhanced Silicon Radiofrequency Substrates","authors":"Martin Perrosé, Yoann Baron, Baptiste Lefaucher, Pablo Acosta Alba, Jean‐Pierre Raskin","doi":"10.1002/pssa.202400215","DOIUrl":"https://doi.org/10.1002/pssa.202400215","url":null,"abstract":"Herein, high‐resistivity silicon substrates with specific He+ ion implantations to mitigate the parasitic surface conduction effect are studied. Several postimplantation thermal annealing conditions are investigated. Substrate performance is assessed at radiofrequencies (RFs) using the small‐signal characterization of coplanar waveguides (CPW) structures. The best effective resistivity (ρeff) of 4 kΩ cm is achieved with the wafer annealed at 600 °C for 2 h. This ρeff value is also stable as a function of DC bias applied to the CPWs. Those high RF performances originate from the nature of the defects created by ion implantation. Defects are deeply analyzed using spectroscopy measurement and scanning transmission electron microscopy. Combining these measurements, it is shown that {311} defects are probably responsible for the achieved high RF performances. Finally, the link between charge carriers trapping in the RF domain and defects nature is discussed to develop a defects engineering strategy for low‐loss RF substrates. The proposed fabrication method enables the fabrication of RF passivation layer locally over the wafer, and thus the cointegration of RF devices with fully depleted silicon‐on‐insulator technology.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"35 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141746099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeSxOy for Homostructure Solar Cell 络合剂浓度对化学浴沉积 n 型 FeSxOy 同结构太阳能电池理化性质的影响

IF 2 4区材料科学

Physica Status Solidi A-applications and Materials Science Pub Date : 2024-07-19 DOI: 10.1002/pssa.202400376

Adrian Afzal Ariff, Aizuddin Supee, Masaya Ichimura, Mohd Zamri Mohd Yusop, Aishah Abdul Jalil

{"title":"Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n‐Type FeSxOy for Homostructure Solar Cell","authors":"Adrian Afzal Ariff, Aizuddin Supee, Masaya Ichimura, Mohd Zamri Mohd Yusop, Aishah Abdul Jalil","doi":"10.1002/pssa.202400376","DOIUrl":"https://doi.org/10.1002/pssa.202400376","url":null,"abstract":"A chemical bath deposition (CBD) is applied to deposit n‐type iron sulfide (FeSxOy) film on fluorine (F)‐doped tin oxide (SnO2)–FTO substrate. The duration, temperature, and magnetic stirrer's speed in CBD are 3 h, 75 °C, and 100 revolutions per minute. The influence of complexing agents’ concentration (≤200 mm)–acid (tartaric and lactic) on the physicochemical properties of film is studied. All films are n‐type semiconductors with large bandgap (2.95–3.58 eV) and contain high oxygen (≈56–83%). Scanning electron microscopy image shows the 50 mm tartaric acid film has a uniform and denser surface morphology. FeSxOy film with tartaric acid has lesser goethite and hematite peaks in X‐ray diffraction than lactic acid. The FeSxOy film with 100 mm lactic acid exhibits a slightly higher transmittance at ≈350–450 nm. The FeSxOy homostructure reveals average open‐circuit voltage (Voc) = 0.45 V, short‐circuit current (Jsc) = 0.0003 mA cm−2, fill factor =38%, and efficiency (η) = 0.57%.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":"45 1","pages":""},"PeriodicalIF":2.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141742351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0