2013 13th International Workshop on Junction Technology (IWJT)最新文献_第3页

High mobility Ge-channel formation by localized/selective liquid phase epitaxy (LPE) using Ge+B plasma ion implantation and laser melt annealing 基于Ge+B等离子体离子注入和激光熔融退火的局域/选择性液相外延形成高迁移率Ge通道

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644504

J. Borland, S. Qin, P. Oesterlin, K. Huet, W. Johnson, Lauren A. Klein, G. Goodman, A. Wan, S. Novak, T. Murray, R. Matyi, A. Joshi, S. Prussin

引用次数: 3

Progress and prospects of silicon transistors based on junction technologies 基于结技术的硅晶体管的研究进展与展望

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644515

H. Wakabayashi

引用次数: 3

Kinetic Monte Carlo simulations for dopant diffusion and defects in Si and SiGe: Analysis of dopants in SiGe-channel Quantum Well Si和SiGe中掺杂物扩散和缺陷的动力学蒙特卡罗模拟:SiGe通道量子阱中掺杂物的分析

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644510

T. Noda, L. Witters, J. Mitard, E. Rosseel, G. Hellings, C. Vrancken, P. Eyben, H. Bender, A. Thean, N. Horiguchi, W. Vandervorst

引用次数: 0

Characterization of ion implanted silicon using UV Raman and multiwavelength photoluminescence for in-line dopant activation monitoring 用紫外拉曼和多波长光致发光表征离子注入硅的在线掺杂激活监测

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644502

W. Yoo, T. Ishigaki, T. Ueda, K. Kang, N. Hasuike, H. Harima, M. Yoshimoto

引用次数: 0

High dose dopant implantation to heated Si substrate without amorphous layer formation 在加热的Si衬底上注入高剂量的掺杂剂而不形成非晶层

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644507

H. Onoda, Y. Nakashima, T. Nagayama, S. Sakai

{"title":"High dose dopant implantation to heated Si substrate without amorphous layer formation","authors":"H. Onoda, Y. Nakashima, T. Nagayama, S. Sakai","doi":"10.1109/IWJT.2013.6644507","DOIUrl":"https://doi.org/10.1109/IWJT.2013.6644507","url":null,"abstract":"Enhancement of transistor drivability with suppressing short channel effect is a mandatory requirement for device scaling. In order to address the requirement, transistor structure transition from 2D bulk planar to SOI or 3D FinFET structures is now proceeding[1-3]. In FinFET structures, high dose tilt implantations are used in source drain extension formation. This implantations cause amorphization of Si fins, and there exists an issue here for difficulty in regrowth of amorphized Si fins during successive activation annealing. For further scaling, fin width becomes narrower, and regrowth from crystal channel also cannot be much expected. Amorphized Si fin cannot be easily regrown to Si fin top during activation annealing, resulting in twin formation and/or poly crystal[4] as shown in the schematic figure (Fig.1). In addition, memory devices also have almost the same transistor structure. Shrinking active Si areas in transistors of flash memory embedded in surrounding STI oxide is similar structure as tall Si fin in FinFET structures. Doping with ion implantation causes narrow active Si areas amorphous, and regrowth to the active Si top is also becoming difficult. Doping without Si amorphization is a challenge for further scaling of transistors both in logic devices and memory devices. This paper reports high dose doping by using implantation to heated Si substrates. Crystalline quality, depth profiles and resistance of As+, P+ and BF2+ implanted Si at elevated temperatures have been investigated. It will be shown that high dose doping without amorphization, and also low resistance of implanted regions after annealing can be successfully embodied.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124209051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Integration of millisecond and spike anneals for dopant activation optimization 集成毫秒和尖峰退火优化掺杂剂激活

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644512

Shiyu Sun, Shashank Sharma, K. V. Rao, B. Ng, D. Kouzminov, B. Colombeau, N. Variam, S. Muthukrishnan, A. Mayur, A. Brand

引用次数: 1

The outline and recent progress of thin-film solar cells and heterojunction with intrinsic thin-layer (HIT) solar cells 薄膜太阳能电池和异质结与本征薄层(HIT)太阳能电池的概述和最新进展

2013 13th International Workshop on Junction Technology (IWJT) Pub Date : 2013-06-06 DOI: 10.1109/IWJT.2013.6644494

W. Shinohara, Y. Aya, S. Yata, M. Matsumoto, A. Terakawa

引用次数: 1