{"title":"Progress and prospects of silicon transistors based on junction technologies","authors":"H. Wakabayashi","doi":"10.1109/IWJT.2013.6644515","DOIUrl":null,"url":null,"abstract":"Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.","PeriodicalId":196705,"journal":{"name":"2013 13th International Workshop on Junction Technology (IWJT)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2013.6644515","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Progress of silicon transistors will be described on junction technologies. Especially, advanced CMOS device and more than Moore technologies will be discussed for various applications.