SPIE Advanced Lithography最新文献_第8页

High chi block copolymer DSA to improve pattern quality for FinFET device fabrication 高chi嵌段共聚物DSA改善FinFET器件制造的图形质量

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2219544

H. Tsai, H. Miyazoe, Ankit Vora, T. Magbitang, N. Arellano, Chi-Chun Liu, Michael J. Maher, William J. Durand, S. Dawes, J. Bucchignano, L. Gignac, D. Sanders, E. Joseph, M. Colburn, C. Willson, Christopher J. Ellison, M. Guillorn

引用次数: 14

Spin-on-carbon hard masks utilising fullerene derivatives 利用富勒烯衍生物的碳自旋硬掩膜

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2219212

A. Brown, A. Frommhold, T. Lada, J. Bowen, Z. el Otell, A. Robinson

引用次数: 5

Fundamental characterization of shrink techniques on negative tone development based dense contact holes 基于密集接触孔的负色调显影收缩技术的基本特征

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2218626

K. Jain, S. Light

{"title":"Fundamental characterization of shrink techniques on negative tone development based dense contact holes","authors":"K. Jain, S. Light","doi":"10.1117/12.2218626","DOIUrl":"https://doi.org/10.1117/12.2218626","url":null,"abstract":"Enormous advances have been made in recent years to design sub 40nm dense contact hole pattern with local CD uniformity (CDU) that the process can tolerate. Negative tone development process (NTD) on 193nm photoresists has achieved this to a large extent without the requirement of additional processing steps on the patterned layer. With further shrinking of size of the subsequent nodes, the demand to produce smaller patterns with wider process window, low defectivity, and improved CDU is increasing, and reaching beyond what can be achieved through NTD alone. A number of techniques are in practice today to achieve this, most notably, implementation of a collar of Atomic Layer Deposited SiO2 (ALD) on photoresist or substrate. However, in recent years, various material suppliers have also proposed shrink chemistries to achieve this. In this paper, we have provided fundamental characterization of shrink via application of spin-on agents (organic as well as aqueous) on the post-imaged pattern. We have also compared them for their shrink capacity, defect tendency, dry etch capability and ease of implementation in the process flow. In addition, we have provided recommendations on which technique is suitable for a given set of process prerequisites.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115532693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Focus measurement using SEM image analysis of circuit pattern 聚焦测量用SEM图像分析电路图样

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2229089

S. Shinoda, Yasutaka Toyoda, Yutaka Hojo, H. Sugahara, H. Sindo

{"title":"Focus measurement using SEM image analysis of circuit pattern","authors":"S. Shinoda, Yasutaka Toyoda, Yutaka Hojo, H. Sugahara, H. Sindo","doi":"10.1117/12.2229089","DOIUrl":"https://doi.org/10.1117/12.2229089","url":null,"abstract":"We have developed a new focus measurement method based on analyzing SEM images that can help to control a scanner.\u0000In advanced semiconductor fabrication, rigorous focus control of the scanner has been required because focus error causes a defect.\u0000Therefore, it is essential to ensure focus error are detected at wafer fabrication. \u0000In the past, the focus has been measured using test patterns made outside of the chip by optical metrology system.\u0000Thus, present focus metrology system can’t measure the focus of an arbitrary point in the chip.\u0000The new method enables a highly precise focus measurement of the arbitrary point of the chip based on a focus plane of a reference scanner.\u0000The method estimates the focus amount by analyzing side wall shapes of circuit patterns of SEM images.\u0000Side wall shapes are quantified using multisliced contours extracted from SEM-images high accuracy.\u0000By using this method, it is possible to measure the focus of the arbitrary circuit pattern area of the chip without a test pattern.\u0000We believe the method can contribute to control the scanner and to detect hot spots which appear by focus error.\u0000This new method and the evaluation results will be presented in detail in this paper.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"32 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126052966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Metal containing material processing on coater/developer system 含金属材料在涂布机/显影剂系统上的加工

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2219106

S. Kawakami, Hiroshi Mizunoura, K. Matsunaga, Koichi Hontake, Hiroshi Nakamura, S. Shimura, M. Enomoto

引用次数: 0

Directed self-assembly of PS-b-PMMA with ionic liquid addition 离子液体加入下PS-b-PMMA的定向自组装

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2220420

Xuanxuan Chen, T. Seo, Paulina A. Rincon-Delgadillo, T. Matsumiya, A. Kawaue, Takaya Maehashi, R. Gronheid, P. Nealey

{"title":"Directed self-assembly of PS-b-PMMA with ionic liquid addition","authors":"Xuanxuan Chen, T. Seo, Paulina A. Rincon-Delgadillo, T. Matsumiya, A. Kawaue, Takaya Maehashi, R. Gronheid, P. Nealey","doi":"10.1117/12.2220420","DOIUrl":"https://doi.org/10.1117/12.2220420","url":null,"abstract":"Directed self-assembly of block copolymers is a promising candidate to address grand challenges towards new generations of low-cost, high-resolution nanopatterning technology. Over the past decade, poly(styrene-b-methyl methacrylate) (PS-b-PMMA) has been the most popular block copolymer applied in this area. However, further scaling towards pitches below 20 nm is hindered by its relatively low segregation strength between constituent blocks, characterized by a low Flory-Huggins interaction parameter, χ (~ 0.038 at r.t). To reach sub-10 nm feature dimensions, many high- χ block copolymer materials and processes are currently being studied. Here we investigate the DSA of PSb- PMMA with blended ionic liquid (IL) on chemically-patterned substrates via thermal annealing with a free surface. In this materials system, by adding low volume fraction of IL, a substantially higher χ than the pure block copolymer is achieved with manageable change in surface and interfacial properties so that poly(styrene-random-methyl methacrylate) brushes may be used to control substrate wetting behavior, and the blend could be assembled using thermal annealing with a free surface. In other words, PS-b-PMMA/IL may serve as a high- χ drop-in replacement for PS-b-PMMA. In this work, we provide key DSA results to determine if PS-b-PMMA/IL blends would offer a solution for sub-10 nm lithography.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"9779 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129814362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Study of energy delivery and mean free path of low energy electrons in EUV resists EUV电阻中低能电子的能量传递和平均自由程研究

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2220390

Suchit Bhattarai, A. Neureuther, P. Naulleau

引用次数: 11

Material analysis techniques used to drive down in-situ mask contamination sources 用于降低原位掩模污染源的材料分析技术

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2220400

Harm Dillen, G. Rebel, Jennifer Massier, Dominika Grodzinka, R. Bruls

引用次数: 0

Design of new block copolymer systems to achieve thick films with defect-free structures for applications of DSA into lithographic large nodes 设计新的嵌段共聚物体系，实现无缺陷结构的厚膜，用于光刻大节点的DSA应用

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2219214

X. Chevalier, P. Coupillaud, G. Lombard, C. Nicolet, J. Beausoleil, G. Fleury, M. Zelsmann, P. Bézard, G. Cunge, J. Berron, K. Sakavuyi, A. Gharbi, R. Tiron, G. Hadziioannou, C. Navarro, I. Cayrefourcq

引用次数: 1

Phase field mapping for accurate, ultrafast simulations of directed self-assembly 相场映射精确，超快模拟定向自组装

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI: 10.1117/12.2219311

Jimmy Liu, K. Delaney, G. Fredrickson

引用次数: 4