Design of new block copolymer systems to achieve thick films with defect-free structures for applications of DSA into lithographic large nodes

X. Chevalier, P. Coupillaud, G. Lombard, C. Nicolet, J. Beausoleil, G. Fleury, M. Zelsmann, P. Bézard, G. Cunge, J. Berron, K. Sakavuyi, A. Gharbi, R. Tiron, G. Hadziioannou, C. Navarro, I. Cayrefourcq
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引用次数: 1

Abstract

Properties of new block copolymers systems, specifically designed to reach large periods for the features, are compared to the ones exhibited by classical PS-b-PMMA materials of same dimensions. Conducted studies, like free-surface defects analysis, mild-plasma tomography experiments, graphoepitaxy-guided structures, etch-transfer… indicate much better performances, in terms of achievable film-thicknesses with perpendicular features, defects levels, and dimensional uniformities, for the new system than for the classical PS-b-PMMA. These results clearly highlight unique and original solutions toward an early introduction of DSA technology into large lithographic nodes.
设计新的嵌段共聚物体系,实现无缺陷结构的厚膜,用于光刻大节点的DSA应用
新型嵌段共聚物体系的性能,专门设计为达到大周期的特征,与相同尺寸的经典PS-b-PMMA材料所表现出的性能进行了比较。已进行的研究,如自由表面缺陷分析、轻度等离子体断层扫描实验、石墨外晶引导结构、蚀刻转移……表明,就可实现的膜厚度、垂直特征、缺陷水平和尺寸均匀性而言,新系统比经典的PS-b-PMMA具有更好的性能。这些结果清楚地强调了早期将DSA技术引入大型光刻节点的独特和原始解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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