高chi嵌段共聚物DSA改善FinFET器件制造的图形质量

SPIE Advanced Lithography Pub Date : 2016-03-25 DOI:10.1117/12.2219544

H. Tsai, H. Miyazoe, Ankit Vora, T. Magbitang, N. Arellano, Chi-Chun Liu, Michael J. Maher, William J. Durand, S. Dawes, J. Bucchignano, L. Gignac, D. Sanders, E. Joseph, M. Colburn, C. Willson, Christopher J. Ellison, M. Guillorn

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引用次数: 14

摘要

嵌段共聚物(BCP)定向自组装(DSA)是一种很有前途的光刻扩展技术，可以在193i光刻中实现小于30nm间距的尺寸。继续向20nm或更低的间距扩展将需要PS-b-PMMA的材料系统改进。线条边缘粗糙度(LER)、线条宽度粗糙度(LWR)、尺寸均匀性和位置等DSA特征的图案质量是DSA可制造性的关键。在这项工作中，我们展示了用dsa图案鳍制造的finFET器件，并比较了几种BCP系统的持续音调缩放。24nm和21nm波长的有机-有机高chi bcp在图案转移后表现出更高的低到中频LER/LWR。

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High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

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SPIE Advanced Lithography

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