SPIE Advanced Lithography最新文献_第2页

Electric fields in Scanning Electron Microscopy simulations 扫描电子显微镜模拟中的电场

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2219182

K. Arat, J. Bolten, T. Klimpel, N. Unal

引用次数: 4

Scatterometry modeling for gratings with roughness and irregularities 粗糙和不规则光栅的散射测量建模

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2219019

J. Bischoff, K. Hehl

引用次数: 3

Reliable characterization of materials and nanostructured systems <<50nm using coherent EUV beams 利用相干超紫外光束可靠表征 <<50nm 的材料和纳米结构系统

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2219434

J. Hernández-Charpak, T. Frazer, J. Knobloch, K. Hoogeboom-Pot, D. Nardi, W. Chao, Lei Jiang, M. Tripp, S. King, H. Kapteyn, M. Murnane

引用次数: 1

GPU accelerated Monte-Carlo simulation of SEM images for metrology GPU加速蒙特卡罗模拟SEM图像的计量

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2219160

T. Verduin, S. Lokhorst, C. W. Hagen

{"title":"GPU accelerated Monte-Carlo simulation of SEM images for metrology","authors":"T. Verduin, S. Lokhorst, C. W. Hagen","doi":"10.1117/12.2219160","DOIUrl":"https://doi.org/10.1117/12.2219160","url":null,"abstract":"In this work we address the computation times of numerical studies in dimensional metrology. In particular, full Monte-Carlo simulation programs for scanning electron microscopy (SEM) image acquisition are known to be notoriously slow. Our quest in reducing the computation time of SEM image simulation has led us to investigate the use of graphics processing units (GPUs) for metrology. We have succeeded in creating a full Monte-Carlo simulation program for SEM images, which runs entirely on a GPU. The physical scattering models of this GPU simulator are identical to a previous CPU-based simulator, which includes the dielectric function model for inelastic scattering and also refinements for low-voltage SEM applications. As a case study for the performance, we considered the simulated exposure of a complex feature: an isolated silicon line with rough sidewalls located on a at silicon substrate. The surface of the rough feature is decomposed into 408 012 triangles. We have used an exposure dose of 6 mC/cm2, which corresponds to 6 553 600 primary electrons on average (Poisson distributed). We repeat the simulation for various primary electron energies, 300 eV, 500 eV, 800 eV, 1 keV, 3 keV and 5 keV. At first we run the simulation on a GeForce GTX480 from NVIDIA. The very same simulation is duplicated on our CPU-based program, for which we have used an Intel Xeon X5650. Apart from statistics in the simulation, no difference is found between the CPU and GPU simulated results. The GTX480 generates the images (depending on the primary electron energy) 350 to 425 times faster than a single threaded Intel X5650 CPU. Although this is a tremendous speedup, we actually have not reached the maximum throughput because of the limited amount of available memory on the GTX480. Nevertheless, the speedup enables the fast acquisition of simulated SEM images for metrology. We now have the potential to investigate case studies in CD-SEM metrology, which otherwise would take unreasonable amounts of computation time.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115486743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

Multiple beam ptychography 多波束平面摄影

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2220416

Robert M. Karl, C. Bevis, Raymond Lopez-Rios, Jonathan T. Reichanadter, D. Gardner, Christina L. Porter, E. Shanblatt, M. Tanksalvala, G. Mancini, M. Murnane, H. Kapteyn, D. Adams

引用次数: 0

Non-contact distance measurement and profilometry using thermal near-field radiation towards a high resolution inspection and metrology solution 使用热近场辐射的非接触式距离测量和轮廓测量，实现高分辨率检测和计量解决方案

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2218877

R. Bijster, H. Sadeghian, F. van Keulen

{"title":"Non-contact distance measurement and profilometry using thermal near-field radiation towards a high resolution inspection and metrology solution","authors":"R. Bijster, H. Sadeghian, F. van Keulen","doi":"10.1117/12.2218877","DOIUrl":"https://doi.org/10.1117/12.2218877","url":null,"abstract":"Optical near-field technologies such as solid immersion lenses and hyperlenses are candidate solutions for high resolution and high throughput wafer inspection and metrology for the next technology nodes. Besides sub-diffraction limited optical performance, these concepts share the necessity of extreme proximity to the sample at distances that are measured in tens of nanometers. For the instrument this poses two major challenges: 1) how to measure the distance to the sample? and 2) how to position accurately and at high speed? For the first challenge near-field thermal radiation is proposed as a mechanism for an integrated distance sensor (patent pending). This sensor is realized by making a sensitive calorimeter (accuracy of 2:31nW root sum squared). When used for distance measurement an equivalent uncertainty of 1nm can be achieved for distances smaller than 100 nm. By scanning the distance sensor over the sample, thermal profilometry is realized, which can be used to inspect surfaces in a non-intrusive and non-contact way. This reduces wear of the probe and minimizes the likelihood of damaging the sample.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125714452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A new approach to process control using Instability Index 一种利用不稳定指数进行过程控制的新方法

SPIE Advanced Lithography Pub Date : 2016-04-21 DOI: 10.1117/12.2218623

Jeffrey Weintraub, S. Warrick

{"title":"A new approach to process control using Instability Index","authors":"Jeffrey Weintraub, S. Warrick","doi":"10.1117/12.2218623","DOIUrl":"https://doi.org/10.1117/12.2218623","url":null,"abstract":"The merits of a robust Statistical Process Control (SPC) methodology have long been established. In response to the numerous SPC rule combinations, processes, and the high cost of containment, the Instability Index (ISTAB) is presented as a tool for managing these complexities. ISTAB focuses limited resources on key issues and provides a window into the stability of manufacturing operations. ISTAB takes advantage of the statistical nature of processes by comparing the observed average run length (OARL) to the expected run length (ARL), resulting in a gap value called the ISTAB index. The ISTAB index has three characteristic behaviors that are indicative of defects in an SPC instance. Case 1: The observed average run length is excessively long relative to expectation. ISTAB > 0 is indicating the possibility that the limits are too wide. Case 2: The observed average run length is consistent with expectation. ISTAB near zero is indicating that the process is stable. Case 3: The observed average run length is inordinately short relative to expectation. ISTAB < 0 is indicating that the limits are too tight, the process is unstable or both. The probability distribution of run length is the basis for establishing an ARL. We demonstrate that the geometric distribution is a good approximation to run length across a wide variety of rule sets. Excessively long run lengths are associated with one kind of defect in an SPC instance; inordinately short run lengths are associated with another. A sampling distribution is introduced as a way to quantify excessively long and inordinately short observed run lengths. This paper provides detailed guidance for action limits on these run lengths. ISTAB as a statistical method of review facilitates automated instability detection. This paper proposes a management system based on ISTAB as an enhancement to more traditional SPC approaches.","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129454700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation 利用电子束检测工具进行基于klarf的自动缺陷检测:一种在线监测和/或工艺变更验证的新方法

SPIE Advanced Lithography Pub Date : 2016-04-12 DOI: 10.1117/12.2218887

Na Cai, Xuefeng Zeng, Kevin Wu, Ho Young Song, Weihong Gao, Qing Tian, C. Lei, Kewen Gao, Liuchen Wang, Yan Zhao

引用次数: 2

High χ block copolymers based on chemical modification of poly(t-butyl acrylate) containing block copolymers 含嵌段共聚物的聚丙烯酸t-丁酯化学改性的高χ嵌段共聚物

SPIE Advanced Lithography Pub Date : 2016-04-11 DOI: 10.1117/12.2221905

Sungmin Park, Seongjun Jo, Yonghoon Lee, C. Ryu, D. Ryu, J. Chun

引用次数: 1

EUV extendibility via dry development rinse process EUV扩展通过干显影冲洗过程

SPIE Advanced Lithography Pub Date : 2016-04-11 DOI: 10.1117/12.2220113

S. Sayan, T. Zheng, D. De Simone, G. Vandenberghe

引用次数: 2