利用电子束检测工具进行基于klarf的自动缺陷检测:一种在线监测和/或工艺变更验证的新方法

Na Cai, Xuefeng Zeng, Kevin Wu, Ho Young Song, Weihong Gao, Qing Tian, C. Lei, Kewen Gao, Liuchen Wang, Yan Zhao
{"title":"利用电子束检测工具进行基于klarf的自动缺陷检测:一种在线监测和/或工艺变更验证的新方法","authors":"Na Cai, Xuefeng Zeng, Kevin Wu, Ho Young Song, Weihong Gao, Qing Tian, C. Lei, Kewen Gao, Liuchen Wang, Yan Zhao","doi":"10.1117/12.2218887","DOIUrl":null,"url":null,"abstract":"We report an optical inspection guided e-beam inspection method for inline monitoring and/or process change validation. We illustrate its advantage through the case of detection of buried voids/unlanding vias, which are identified as yield-limiting defects to cause electrical connectivity failures. We inspected a back end of line (BEOL) wafer after the copper electro plating and chemical mechanical planarization (CMP) process with bright field inspection (BFI) and employed EBI to inspect full wafer with guidance of BFI klarf file. The dark voltage contrast defects were detected and confirmed as buried voids by transmission electron microscopy (TEM).","PeriodicalId":193904,"journal":{"name":"SPIE Advanced Lithography","volume":"504 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation\",\"authors\":\"Na Cai, Xuefeng Zeng, Kevin Wu, Ho Young Song, Weihong Gao, Qing Tian, C. Lei, Kewen Gao, Liuchen Wang, Yan Zhao\",\"doi\":\"10.1117/12.2218887\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report an optical inspection guided e-beam inspection method for inline monitoring and/or process change validation. We illustrate its advantage through the case of detection of buried voids/unlanding vias, which are identified as yield-limiting defects to cause electrical connectivity failures. We inspected a back end of line (BEOL) wafer after the copper electro plating and chemical mechanical planarization (CMP) process with bright field inspection (BFI) and employed EBI to inspect full wafer with guidance of BFI klarf file. The dark voltage contrast defects were detected and confirmed as buried voids by transmission electron microscopy (TEM).\",\"PeriodicalId\":193904,\"journal\":{\"name\":\"SPIE Advanced Lithography\",\"volume\":\"504 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SPIE Advanced Lithography\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2218887\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE Advanced Lithography","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2218887","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

我们报告了一种用于在线监测和/或工艺变更验证的光学检查引导电子束检查方法。我们通过检测埋藏空隙/未着陆过孔的情况来说明其优势,这些缺陷被确定为导致电气连接故障的产量限制缺陷。采用亮场检测(BFI)技术对镀铜和化学机械平面化(CMP)工艺后的后端(BEOL)晶圆进行了检测,并在BFI klarf文件的指导下,采用亮场检测(EBI)对整片晶圆进行了检测。通过透射电子显微镜(TEM)检测到暗电压对比缺陷,确认其为埋藏空洞。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation
We report an optical inspection guided e-beam inspection method for inline monitoring and/or process change validation. We illustrate its advantage through the case of detection of buried voids/unlanding vias, which are identified as yield-limiting defects to cause electrical connectivity failures. We inspected a back end of line (BEOL) wafer after the copper electro plating and chemical mechanical planarization (CMP) process with bright field inspection (BFI) and employed EBI to inspect full wafer with guidance of BFI klarf file. The dark voltage contrast defects were detected and confirmed as buried voids by transmission electron microscopy (TEM).
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