npj 2D Materials and Applications最新文献_第6页

Graphene oxide-based membranes for water desalination and purification 基于氧化石墨烯的脱盐和净水膜

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-27 DOI: 10.1038/s41699-024-00462-z

Saurabh Kr Tiwary, Maninderjeet Singh, Shubham Vasant Chavan, Alamgir Karim

{"title":"Graphene oxide-based membranes for water desalination and purification","authors":"Saurabh Kr Tiwary, Maninderjeet Singh, Shubham Vasant Chavan, Alamgir Karim","doi":"10.1038/s41699-024-00462-z","DOIUrl":"10.1038/s41699-024-00462-z","url":null,"abstract":"Millions of people across the globe are severely afflicted because of water potability issues, and to proffer a solution to this crisis, efficient and cost-effective desalination techniques are necessitated. Membranes, in particular Graphene-derived membranes, have emerged as a potential answer to this grave problem because of their tunable ionic and molecular sieving capability, thin structure, and customizable microstructure. Among graphene-derived membranes, Graphene Oxide membranes have been the most promising, given the replete presence of oxygen-containing functional groups on its surface. However, the prospects of commercial applicability of these membranes are currently plagued by uneven stacking, crossflow delamination, flawed pores, screening and pH effects, and horizontal defects in the membrane. In addition, due to the selectivity–permeability trade-off that commonly exists in all membranes, the separation efficiency is negatively influenced. This review, while studying these challenges, aims to outline the most recent ground-breaking developments in graphene-based membrane technology, encompassing their separation mechanism, selectivity, adjustable mechanical characteristics, and uses. Additionally, we have covered in detail how several process variables such as temperature, total oxygen concentration, and functional groups affect the effectiveness of membrane separation with the focal point tilted toward studying the currently used intercalation techniques and effective nanomaterial graphene oxide membranes for water desalination","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-19"},"PeriodicalIF":9.7,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00462-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140310394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer 通过牺牲氧化石墨烯播种层增强单层 WS2 的介电钝化

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-27 DOI: 10.1038/s41699-024-00464-x

P.-J. Wyndaele, J.-F. de Marneffe, S. Sergeant, C. J. L. de la Rosa, S. Brems, A. M. Caro, S. De Gendt

{"title":"Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer","authors":"P.-J. Wyndaele, J.-F. de Marneffe, S. Sergeant, C. J. L. de la Rosa, S. Brems, A. M. Caro, S. De Gendt","doi":"10.1038/s41699-024-00464-x","DOIUrl":"10.1038/s41699-024-00464-x","url":null,"abstract":"The full utilization of two-dimensional transition metal dichalcogenides (2D TMDCs) faces several challenges, among which is realizing uniform material deposition on the 2D surface. Typical strategies to enable material growth lead to a poor interface quality, degrading the 2D TMDC’s properties. In this work, a sacrificial, graphene oxide-based seeding layer is used (1) as passivation layer, protecting the underlying 2D TMDC and (2) as nucleation layer, enabling uniform material growth. Graphene is transferred on monolayer WS2, establishing a high-quality van der Waals interface. After transfer, the polymeric residues on graphene are cleaned via a combination of wet- and dry treatments and functionalized via dry UV/O3 oxidation. The rate of graphene oxidation is shown to be substrate dependent, which is explained by UV light-induced ultrafast charge transfer between the graphene and WS2 monolayer. The carbon-oxygen functionalities serve as nucleation sites in a subsequent HfO2 ALD process, achieving more uniform dielectric growth and faster layer closure compared to direct deposition. The graphene-based nucleation- / passivation approach offers adaptability, allowing for tailored surface chemistry to enable any alternative material growth, while maintaining a prefect van der Waals interface.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-11"},"PeriodicalIF":9.7,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00464-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140310408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers 诱导过渡金属二卤化物单层中激子发射的室温谷极化

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-20 DOI: 10.1038/s41699-024-00459-8

Sergii Morozov, Torgom Yezekyan, Christian Wolff, Sergey I. Bozhevolnyi, N. Asger Mortensen

{"title":"Inducing room-temperature valley polarization of excitonic emission in transition metal dichalcogenide monolayers","authors":"Sergii Morozov, Torgom Yezekyan, Christian Wolff, Sergey I. Bozhevolnyi, N. Asger Mortensen","doi":"10.1038/s41699-024-00459-8","DOIUrl":"10.1038/s41699-024-00459-8","url":null,"abstract":"The lowest energy states in transition metal dichalcogenide (TMD) monolayers follow valley selection rules, which have attracted vast interest due to the possibility of encoding and processing of quantum information. However, these quantum states are strongly affected by temperature-dependent intervalley scattering leading to complete valley depolarization, which hampers practical applications at room temperature. Therefore, for achieving clear and robust valley polarization in TMD monolayers one needs to suppress parasitic depolarization processes, which is the central challenge in the growing field of valleytronics. Here, in electron-doping experiments on TMD monolayers, we show that strong doping levels beyond 1013 cm−2 can induce 61% and 37% valley contrast at room temperature in tungsten diselenide and molybdenum diselenide monolayers, respectively. Our findings demonstrate that charged excitons in TMD monolayers hold the potential for the development of efficient valleytronic devices functional at 300 K.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-6"},"PeriodicalIF":9.7,"publicationDate":"2024-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00459-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140181739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators 具有薄外延 CaF2 绝缘层的石墨烯场效应晶体管的变异性和高温可靠性

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-19 DOI: 10.1038/s41699-024-00461-0

Yu. Yu. Illarionov, T. Knobloch, B. Uzlu, A. G. Banshchikov, I. A. Ivanov, V. Sverdlov, M. Otto, S. L. Stoll, M. I. Vexler, M. Waltl, Z. Wang, B. Manna, D. Neumaier, M. C. Lemme, N. S. Sokolov, T. Grasser

{"title":"Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators","authors":"Yu. Yu. Illarionov, T. Knobloch, B. Uzlu, A. G. Banshchikov, I. A. Ivanov, V. Sverdlov, M. Otto, S. L. Stoll, M. I. Vexler, M. Waltl, Z. Wang, B. Manna, D. Neumaier, M. C. Lemme, N. S. Sokolov, T. Grasser","doi":"10.1038/s41699-024-00461-0","DOIUrl":"10.1038/s41699-024-00461-0","url":null,"abstract":"Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use 2 nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for about 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175oC has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV cm−1 and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.7,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00461-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140181737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hard ferromagnetism in van der Waals Fe3GaTe2 nanoflake down to monolayer 范德瓦尔斯 Fe3GaTe2 纳米薄片单层的硬铁磁性

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-18 DOI: 10.1038/s41699-024-00460-1

Mingjie Wang, Bin Lei, Kejia Zhu, Yazhou Deng, Mingliang Tian, Ziji Xiang, Tao Wu, Xianhui Chen

{"title":"Hard ferromagnetism in van der Waals Fe3GaTe2 nanoflake down to monolayer","authors":"Mingjie Wang, Bin Lei, Kejia Zhu, Yazhou Deng, Mingliang Tian, Ziji Xiang, Tao Wu, Xianhui Chen","doi":"10.1038/s41699-024-00460-1","DOIUrl":"10.1038/s41699-024-00460-1","url":null,"abstract":"Two-dimensional (2D) magnetic materials are of not only fundamental scientific interest but also promising candidates for numerous applications. However, so far only a few intrinsic magnets with long-ranged order down to the 2D limit have been experimentally established. Here, we report that the intrinsic 2D ferromagnetism can be realized in van der Waals (vdW) Fe3GaTe2 nanoflake down to monolayer. By measuring the Hall resistance and magnetoresistance, we demonstrate that the Fe3GaTe2 monolayer exhibits 2D hard ferromagnetism with record-high Cure temperature (Tc) of 240 K for the monolayer of known intrinsic ferromagnets. Both of square-shaped hysteresis loops with near-vertical jump in anomalous Hall effect (AHE) and the negative magnetoresistance (NMR) behavior with an applied out-of-plane magnetic field reveal robust perpendicular magnetic anisotropy (PMA) in Fe3GaTe2 nanoflakes down to the monolayer limit. Furthermore, we find the intrinsic mechanism that stems from the Berry curvature of electronic bands dominates AHE of nanoflakes in the low temperature range. Our results not only provide an excellent candidate material for next-generation spintronic applications, but also open up a platform for exploring physical mechanisms in 2D ferromagnetism.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-7"},"PeriodicalIF":9.7,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00460-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140167290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array 融入光电突触阵列的二维材料的生物启发 "自变型 "能力

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-14 DOI: 10.1038/s41699-024-00458-9

Molla Manjurul Islam, Md Sazzadur Rahman, Haley Heldmyer, Sang Sub Han, Yeonwoong Jung, Tania Roy

{"title":"Bio-inspired “Self-denoising” capability of 2D materials incorporated optoelectronic synaptic array","authors":"Molla Manjurul Islam, Md Sazzadur Rahman, Haley Heldmyer, Sang Sub Han, Yeonwoong Jung, Tania Roy","doi":"10.1038/s41699-024-00458-9","DOIUrl":"10.1038/s41699-024-00458-9","url":null,"abstract":"In in-sensor image preprocessing, the sensed image undergoes low level processing like denoising at the sensor end, similar to the retina of human eye. Optoelectronic synapse devices are potential contenders for this purpose, and subsequent applications in artificial neural networks (ANNs). The optoelectronic synapses can offer image pre-processing functionalities at the pixel itself—termed as in-pixel computing. Denoising is an important problem in image preprocessing and several approaches have been used to denoise the input images. While most of those approaches require external circuitry, others are efficient only when the noisy pixels have significantly lower intensity compared to the actual pattern pixels. In this work, we present the innate ability of an optoelectronic synapse array to perform denoising at the pixel itself once it is trained to memorize an image. The synapses consist of phototransistors with bilayer MoS2 channel and p-Si/PtTe2 buried gate electrode. Our 7 × 7 array shows excellent robustness to noise due to the interplay between long-term potentiation and short-term potentiation. This bio-inspired strategy enables denoising of noise with higher intensity than the memorized pattern, without the use of any external circuitry. Specifically, due to the ability of these synapses to respond distinctively to wavelengths from 300 nm in ultraviolet to 2 µm in infrared, the pixel array also denoises mixed-color interferences. The “self-denoising” capability of such an artificial visual array has the capacity to eliminate the need for raw data transmission and thus, reduce subsequent image processing steps for supervised learning.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.7,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00458-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140123818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MoS2 decorated carbon fiber yarn hybrids for the development of freestanding flexible supercapacitors 用于开发独立式柔性超级电容器的 MoS2 装饰碳纤维纱混合物

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-12 DOI: 10.1038/s41699-024-00448-x

José Tiago Carvalho, Afonso Correia, Neusmar J. A. Cordeiro, João Coelho, Sidney A. Lourenço, Elvira Fortunato, Rodrigo Martins, Luís Pereira

{"title":"MoS2 decorated carbon fiber yarn hybrids for the development of freestanding flexible supercapacitors","authors":"José Tiago Carvalho, Afonso Correia, Neusmar J. A. Cordeiro, João Coelho, Sidney A. Lourenço, Elvira Fortunato, Rodrigo Martins, Luís Pereira","doi":"10.1038/s41699-024-00448-x","DOIUrl":"10.1038/s41699-024-00448-x","url":null,"abstract":"Academic and industrial efforts have focused on developing energy storage devices for wearable and portable electronics using low-cost, scalable, and sustainable materials and approaches. In this work, commercially available stretch-broken carbon fiber yarns (SBCFYs) were hybridized with mixed phases of 1 T and 2H MoS2 nanosheets via conventional and microwave-assisted heating (CAH, MAH) without the use of binders to fabricate symmetric freestanding 1D fiber-shaped supercapacitors (FSCs). Electrochemical characterization performed in a three-electrode configuration showed promising results with specific capacitance values of 184.41 and 180.02 F·g−1, at 1 mV·s−1 for CAH and MAH, respectively. Furthermore, after performing 3000 CV cycles at 100 mV·s−1, the capacitance retention was 79.5% and 95.7%, respectively. Using these results as a reference, symmetric 1D FSCs were fabricated by pairing hybridized SBCFYs with MoS2 by MAH. The devices exhibited specific capacitances of approximately 58.60 ± 3.06 F·g−1 at 1 mV·s−1 and 54.81 ± 7.34 F·g−1 at 0.2 A·g−1 with the highest power density achieved being 15.17 W·g−1 and energy density of 5.06×10–4 Wh·g−1. In addition, five 1D FSCs were hand-stitched and connected in series onto a cotton fabric. These supercapacitors could power a temperature and humidity sensor for up to six minutes, demonstrating the practicality and versatility of the prepared 1D FSCs for powering future electronic systems.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-9"},"PeriodicalIF":9.7,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00448-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140114367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microwave graphitic nitrogen/boron ultradoping of graphene 微波石墨氮/硼超掺杂石墨烯

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-08 DOI: 10.1038/s41699-024-00457-w

Rebti Bhushan, Arkamita Bandyopadhyay, Sangeeth Kallatt, Awalendra K. Thakur, Swapan K. Pati, Prashant Kumar

{"title":"Microwave graphitic nitrogen/boron ultradoping of graphene","authors":"Rebti Bhushan, Arkamita Bandyopadhyay, Sangeeth Kallatt, Awalendra K. Thakur, Swapan K. Pati, Prashant Kumar","doi":"10.1038/s41699-024-00457-w","DOIUrl":"10.1038/s41699-024-00457-w","url":null,"abstract":"Insufficient carrier concentration and lack of room temperature ferromagnetism in pristine graphene limit its dream applications in electronic and spintronic chips. While theoretical calculations have revealed that graphitic ultradoping can turn graphene into semiconducting and room temperature ferromagnetic, the exotic set of thermodynamic conditions needed for doping result in defects and functionalities in graphene which end up giving significant electronic scattering. We report our discovery of microwave ultradoping of graphene with N > 30%, B ~ 19%, and co-doping to form BCN phases (B5C73N22, B8C76N16, and B10C77N13). An unprecedented level of graphitic doping ~95% enhances carrier concentration up to ~9.2 × 1012 cm−2, keeping high electronic mobility ~9688 cm2 V−1s−1 intact, demonstrated by field effect transistor measurements. Room temperature ferromagnetic character with magnetization ~4.18 emug−1 is reported and is consistent with our DFT band structure calculations. This breakthrough research on tunable graphitic ultradoping of 2D materials opens new avenues for emerging multi-functional technological applications.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-11"},"PeriodicalIF":9.7,"publicationDate":"2024-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00457-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140066618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly sensitive and reversible MXene-based micro quartz tuning fork gas sensors with tunable selectivity 具有可调选择性的高灵敏度和可逆的基于 MXene 的微型石英音叉气体传感器

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-06 DOI: 10.1038/s41699-024-00452-1

Wei Ding, Jingjing Yu, Francis Tsow, Laxmi Raj Jaishi, Buddhi Sagar Lamsal, Rick Kittelson, Sarwar Ahmed, Parashu Kharel, Yue Zhou, Xiaojun Xian

{"title":"Highly sensitive and reversible MXene-based micro quartz tuning fork gas sensors with tunable selectivity","authors":"Wei Ding, Jingjing Yu, Francis Tsow, Laxmi Raj Jaishi, Buddhi Sagar Lamsal, Rick Kittelson, Sarwar Ahmed, Parashu Kharel, Yue Zhou, Xiaojun Xian","doi":"10.1038/s41699-024-00452-1","DOIUrl":"10.1038/s41699-024-00452-1","url":null,"abstract":"Due to their distinctive morphology, significant surface-to-volume ratio, and metal-like electrical conductivity, MXenes have emerged as highly promising gas-sensing materials. Traditional MXene-based gas sensors predominantly rely on the electrical conductivity of MXenes for signal transduction. However, it is crucial to explore alternative signal transduction mechanisms to fully unlock the potential of MXenes in gas sensing applications. In this study, we have successfully showcased the development of a mass-transduction-based MXene gas sensor, utilizing MXenes as the adaptable receptor and MQTF as the transducer. The interaction between the gas analyte and MXenes induces a change in mass, resulting in a resonant frequency shift of the MQTF. This signal transduction mechanism eliminates the dependency on the electrical conductivity of MXenes, offering a broader range of possibilities for chemical modification of MXenes without concerns about compromising their conductivity. By engineering Ti3C2Tx surfaces, we have demonstrated high sensitivity and selectivity tuning of MXene-MQTF gas sensors for detecting CO, SO2, and NH3. This antisymmetric mass-transduction-based (low-cost, stable, sensitive, and practical tuning fork-based) MXene gas sensor demonstrated exceptional sensing performance, customizable selectivity, and high cost-effectiveness. This study paves the way for designing high-performance MXene-based chemical sensors and expands the scope of potential applications in air quality monitoring, wearable devices, the Internet of Things (IoT), and robotics.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-10"},"PeriodicalIF":9.7,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00452-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140045173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale 在原子和近原子尺度上推进二维材料的增材制造

IF 9.7 2区材料科学

npj 2D Materials and Applications Pub Date : 2024-03-06 DOI: 10.1038/s41699-024-00456-x

Yixin Chen, Fengzhou Fang, Nan Zhang

{"title":"Advance in additive manufacturing of 2D materials at the atomic and close-to-atomic scale","authors":"Yixin Chen, Fengzhou Fang, Nan Zhang","doi":"10.1038/s41699-024-00456-x","DOIUrl":"10.1038/s41699-024-00456-x","url":null,"abstract":"Atomic and close-to-atomic scale manufacturing (ACSM) has emerged as promising technologies in the manufacturing paradigm. Among various materials, 2D materials have garnered significant attention for ACSM due to their atomic-scale characteristics and physical properties. While chemical vapor deposition (CVD) can be employed to produce high-quality 2D materials, achieving patterning often relies on photolithography techniques, which limit scalability and introduce impurities. To address these challenges, this article serves as a review by focusing on exploring atomic-scale additive manufacturing methods for 2D materials. Several potential techniques are reviewed, including site-selective CVD, area-selective atomic layer deposition, electrodeposition, laser-assisted synthesis, print methods, and atomic layer-aligned stacking. The applications of atomic-scale additive manufacturing in various fields, such as electronics, biosensing, and nanoelectromechanical systems, are discussed. Finally, the future prospects of atomic-scale additive manufacturing for 2D materials based on existing research are delved into.","PeriodicalId":19227,"journal":{"name":"npj 2D Materials and Applications","volume":" ","pages":"1-23"},"PeriodicalIF":9.7,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41699-024-00456-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140044839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0