2014 IEEE International Nanoelectronics Conference (INEC)最新文献

Experimental and simulation studies of interface properties of crystalline germanium heterojunction solar cells 晶体锗异质结太阳能电池界面特性的实验与模拟研究

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460329

S. Nakano, Y. Takeuchi

{"title":"Experimental and simulation studies of interface properties of crystalline germanium heterojunction solar cells","authors":"S. Nakano, Y. Takeuchi","doi":"10.1109/INEC.2014.7460329","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460329","url":null,"abstract":"Numerical simulation of crystalline germanium (c-Ge) heterojunction solar cell was performed using simulation software AFORS-HET. We confirmed that a difference of the minority carrier band offset of n-type hydrogenated amorphous silicon (a-Si:H(n))/c-Ge(p) and a-Si:H(p)/c-Ge(n) structure has great impacts for solar cell performance. The a-Si:H(p)/c-Ge(n) valence band offset of 0.96 eV induces larger band bending in the c-Ge(n) absorber compared with the a-Si:H(n)/c-Ge(p) whose conduction band offset is 0.1 eV. The large band bending can reduce interface recombination due to the reduction of the majority carrier density near the interface. However the offset of 0.96 eV is too large and impedes photogenerated carrier collection. We applied crystalline-Si(p) whose band gap is lower than a-Si:H(p) as the emitter and confirmed that the current limitation was avoided keeping large band bending. On the other hand, although the band bending of the a-Si:H(n)/c-Ge(p) is too small to reduce the interface recombination, the donor doping to the interface layer, whose cell performance improvement effect was experimentally demonstrated, induces large band bending and improves cell performance.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"20 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114043086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Tailoring the physical properties of (Ba, Ca)(Ti, Zr)O3 - xSm2O3 nanocomposite films 调整(Ba, Ca)(Ti, Zr)O3 - xSm2O3纳米复合薄膜的物理性能

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460439

Q. Lin, D. Lorenzen, Danyang Wang

引用次数: 0

Multifunctional tactile sensors using MEMS cantilevers 采用MEMS悬臂梁的多功能触觉传感器

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460417

M. Sohgawa

引用次数: 0

A flexible glucose biofuel cell with porous polypyrrole electrodes modified with enzymes 具有酶修饰的多孔聚吡咯电极的柔性葡萄糖生物燃料电池

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460326

Ryohei Sano, Jun Yamasaki, Hideaki Goto, Takuma Ishida, Yusuke Fujimagari, Kazuki Hoshi, Y. Fukushi, Y. Nishioka

引用次数: 0

Electroactive polymer actuated tendon driven micro actuator for robotic application 用于机器人的电活性聚合物驱动肌腱驱动微驱动器

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460414

Md. Masum Billah, R. Khan, A. Shafie, Rini Akmeliawati

{"title":"Electroactive polymer actuated tendon driven micro actuator for robotic application","authors":"Md. Masum Billah, R. Khan, A. Shafie, Rini Akmeliawati","doi":"10.1109/INEC.2014.7460414","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460414","url":null,"abstract":"Tendon driven actuators are getting mature in electroactive polymer (EAP) researches. Research and development of the dielectric elastomer (DE) actuator from EAP family, have produced significant progress for decades. Dielectric elastomer is used in this paper to model a micro actuator platform. The parallel platform designing in this paper consists of the kinematics of the platform that is suited for micro structure of the robotic link. This may use for redundant manipulator or snake robot structure. DE is silicon artificial muscles that will actuated by applying voltage which perform a great actuation due to its linear large deflection. A remarkable amount of work has focused on delivering the feasibility of the robotic application of DE material. However, few commercial products equipped with polymer actuators have been introduced in the market, probably because most of the research has been dedicated either to discovering new actuation properties of the polymeric material. Therefore, this polymer is used to model the tendon driven parallel platform actuator for robotic application in this research. In this actuator design, both the upper and lower platforms are of configurations of equilateral triangles with DE cables attached close to the vertices. One DE cable attaches each of the vertices of the lower platform to the vertices directly above it on the upper platform. The three tendons thus enable the platform to exhibit 3 degrees of freedom (DOF). The dielectric polymers are attached with the three edges of the platforms that act like compression-tension cable because of their linear deformation characteristics. Therefore the platform of the DE actuator model is achieved in this research. This actuator can be used to develop redundant robot like snake robot or elephant trunk robot.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133559883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of thermal annealing on a-plane GaN grown on r-plane sapphire 热退火对r面蓝宝石上生长a面GaN的影响

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460461

T. Ko, T. Lu, Jung-Ron Chen, S. Ou, Chia-Ming Chang, H. Kuo, D. Lin

{"title":"Effect of thermal annealing on a-plane GaN grown on r-plane sapphire","authors":"T. Ko, T. Lu, Jung-Ron Chen, S. Ou, Chia-Ming Chang, H. Kuo, D. Lin","doi":"10.1109/INEC.2014.7460461","DOIUrl":"https://doi.org/10.1109/INEC.2014.7460461","url":null,"abstract":"The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photoluminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.","PeriodicalId":188668,"journal":{"name":"2014 IEEE International Nanoelectronics Conference (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114407331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High photocurrent and operation frequency for light-addressable potentiometric sensor by thinner Si substrate 采用较薄硅衬底的高光电流和高工作频率的光寻址电位传感器

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460413

Tsung-Cheng Chen, Wei-Yin Zeng, Y. Liao, Anirban Das, Chia‐Ming Yang, Chao‐Sung Lai

引用次数: 0

Review: Ionic liquids as a potential electrolyte for energy devices 综述:离子液体作为一种潜在的能源装置电解质

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460321

H. Matsumoto

引用次数: 1

Random dopant fluctuation in gate-all-around nanowire FET 栅极全能纳米线场效应管中的随机掺杂波动

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460459

C. Tan, Xiangchen Chen

引用次数: 14

Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics 基于超薄a-TiOx薄膜的低工作电压透明电阻随机存取存储器(T-RRAM)及其电阻开关特性

2014 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2014-07-28 DOI: 10.1109/INEC.2014.7460426

Yi-Jen Huang, I-Chung Shih, Shih-Chun Chao, C. Wen, Jr-hau He, Si-Chen Lee

引用次数: 0