Random dopant fluctuation in gate-all-around nanowire FET

Abstract

The random dopant fluctuation (RDF) induced threshold voltage variation are compared between a junctionless and an inversion mode gate-all-around (GAA) silicon nanowire FET. We found that the RDF induced variation of junctionless GAA nanowire FET is larger and more sensitive than that of the inversion mode GAA nanowire FET, and it is contributed by the higher doping concentration in the nanowire of the junctionless device. The impact of RDF on the Id-Vg of the FETs found in this work also suggest appropriate operating conditions for the FETs in order to reduce the impact of RDF.