Micro and Nanosystems最新文献_第5页

The thermal time constant of an electrothermal microcantilever resonator 电热微悬臂谐振器的热时间常数

Micro and Nanosystems Pub Date : 2022-06-22 DOI: 10.2174/1876402914666220622104104

M. Zarog

{"title":"The thermal time constant of an electrothermal microcantilever resonator","authors":"M. Zarog","doi":"10.2174/1876402914666220622104104","DOIUrl":"https://doi.org/10.2174/1876402914666220622104104","url":null,"abstract":"The thermal time constant is the core parameter for determining the dynamic response of the electrothermal actuators and the corresponding maximum operational frequency.\u0000\u0000\u0000\u0000Since it is necessary to determine how the thermal actuation is taking place within the cantilever, this paper presents two models for the thermal time constant of bimetal microcantilevers. One model was based on the bimetallic effect, and the second was based on temperature gradients in layers\u0000\u0000\u0000\u0000In order to investigate and check the validity of the two roposed model, the device was actuated electrothermally and the thermal time response was estimated. A driving voltage was applied to the platinum electrode. The first model is based on the interface thermal resistance between the base and the top electrode layer. The second model assumes that the temperature gradients within the base layer are responsible for thermal actuation.\u0000\u0000\u0000\u0000The microcantilever was excited electrothermally with a resonance frequency of 1.89 MHz. The bimetallic effect was found to be less able to stimulate the microcantilever at this resonance frequency. Therefore, the conclusion was that thermal actuation occurred as a result of temperature variation within the SiC base layer.\u0000\u0000\u0000\u0000The results also indicated that temperature variations within one of the two materials in contact may be responsible for thermal actuation, especially if the material has high thermal conductivity.","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45270257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of nanoclays on polyvinylidene fluoride mixed matrix membranes for the efficient treatment of oily-wastewater 纳米粘土对聚偏氟乙烯混合基质膜高效处理含油废水的影响

Micro and Nanosystems Pub Date : 2022-06-22 DOI: 10.2174/1876402914666220622095858

L. Yogarathinam, A. Ismail, A. Gangasalam, M.K.N. Ramli, M. A. Azali, A. Rushdan

{"title":"Impact of nanoclays on polyvinylidene fluoride mixed matrix membranes for the efficient treatment of oily-wastewater","authors":"L. Yogarathinam, A. Ismail, A. Gangasalam, M.K.N. Ramli, M. A. Azali, A. Rushdan","doi":"10.2174/1876402914666220622095858","DOIUrl":"https://doi.org/10.2174/1876402914666220622095858","url":null,"abstract":"\u0000\u0000Membrane technology demonstrated a sustainable methodology for water reclamation from oily-wastewater, but it is prone to fouling during longer filtration runs. In this study, fouling resistant polyvinylidene fluoride (PVDF) mixed matrix membranes (MMMs) containing nanoclays such as halloysite (HT) and montmorillonite (MMT) were fabricated for the effective treatment of oily wastewater.\u0000\u0000\u0000\u0000Phase inversion technique was followed for the fabrication of HT-PVDF and MMT-PVDF MMMs. Physiochemical characterization and filtration experiments were studied to evaluate the influence of nanoclays on PVDF membrane performance.\u0000\u0000\u0000\u0000Fourier transform infrared spectroscopy (FTIR) and morphology analyses indicated that both nanoclays are layered structured with abundant hydrophilic functional groups. The dispersions of HT and MMT were confirmed by surface morphology and topography analysis of PVDF MMMs. The hydrophilicity property was improved in HT-PVDF and MMT-PVDF MMMs, which was evident in the contact angle analysis. Among the membranes, MMT-PVDF MMMs held the higher water permeability of 2.59 x10-8 m/s.kPa. For oil-water filtration, HT-PVDF and MMT-PVDF MMMs displayed higher normalized flux with maximum rejection of more than 95%.\u0000\u0000\u0000\u0000Overall, MMT would be cost-effective nanofiller for the development of antifouling PVDF MMMs against oil-water filtration.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44214528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Meet the Regional Editor 会见区域编辑

Micro and Nanosystems Pub Date : 2022-06-01 DOI: 10.2174/187640291402220301155914

L. Yobas

引用次数: 0

Emerging Nanovaccine Technology: Defense Against Infection by Oral Administration 新兴纳米疫苗技术：口服预防感染

Micro and Nanosystems Pub Date : 2022-05-23 DOI: 10.2174/1876402914666220523105129

Akash Raghuvanshi, K. Shah, H. K. Dewangan

引用次数: 1

Design and Performance Analysis of Low Sub-Threshold Swing p-Channel Cylindrical Thin-Film Transistors 低亚阈值摆动p沟道圆柱形薄膜晶体管的设计与性能分析

Micro and Nanosystems Pub Date : 2022-05-18 DOI: 10.2174/1876402914666220518141705

Viswanath G. Akkili, V. Srivastava

{"title":"Design and Performance Analysis of Low Sub-Threshold Swing p-Channel Cylindrical Thin-Film Transistors","authors":"Viswanath G. Akkili, V. Srivastava","doi":"10.2174/1876402914666220518141705","DOIUrl":"https://doi.org/10.2174/1876402914666220518141705","url":null,"abstract":"\u0000\u0000Tin monoxide (SnO) attracts considerable interest for p-channel Cylindrical Thin Film Transistors (CTFTs) applications due to their merits, including low hole effective mass, Sn s and O p orbital hybridization at the valance band maxima, and ambipolar nature, among other p-type oxide semiconductors.\u0000\u0000\u0000\u0000This article analyses the influence of channel radius and the impact of dielectric materials on the performance of SnO based CTFT devices through 3D numerical simulations.\u0000\u0000\u0000\u0000The radius of the active layer in the CTFT was varied in the range from 10 nm to 30 nm, and it has been observed that an increase of channel radius reduces the switching behavior of the devices.\u0000\u0000\u0000\u0000The 10 nm thick CTFT exhibited superior results with a lower threshold voltage of 1.5 V and higher field-effect mobility of 13.12 cm2/V-s over other simulated CTFTs.\u0000\u0000\u0000\u0000The obtained mobility values are superior to the existing planar TFTs reports. To improve the device performance further, the CTFTs with various dielectric materials have been simulated and optimized with high field-effect mobility and low sub-threshold swing values.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45947736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Combined Filtration and Flocculation for Chlorella vulgaris Harvesting 小球藻的过滤与絮凝联合收获

Micro and Nanosystems Pub Date : 2022-05-17 DOI: 10.2174/1877946812666220517161412

Lisendra Marbelia, M. Bilad, Pieter Rens, I. Vankelecom

{"title":"Combined Filtration and Flocculation for Chlorella vulgaris Harvesting","authors":"Lisendra Marbelia, M. Bilad, Pieter Rens, I. Vankelecom","doi":"10.2174/1877946812666220517161412","DOIUrl":"https://doi.org/10.2174/1877946812666220517161412","url":null,"abstract":"\u0000\u0000The present study aims to explore the feasibility of using flocculation combined with filtration for microalgae harvesting, i.e., Chlorella vulgaris. This is important because microalgae have small sizes and its broth is stable, which makes it difficult to be harvested. The aforementioned facts cause the harvesting cost to be relatively high and become the bottleneck of microalgae processes.\u0000\u0000\u0000\u0000The objective of this research is to find the relation between microalgae concentration, chitosan dosing as a flocculant, and its filterability on membranes.\u0000\u0000\u0000\u0000Research was performed by first cultivating the microalgae in a lab-scale photobioreactor, followed by jar test, flocculation, and filtration experiment. Jar test flocculation was performed using chitosan and microalgae with different concentrations, by simply mixing it in a 100-mL bottle and analyzing the results with UV Vis Spectroscopy. Filtration experiments were performed using lab-made polyvinylidene fluoride membrane, in a 100-mL dead-end filtration cell and in a 5-L tank for submerged filtration. During both filtration tests, filtration flux and fouling were monitored and compared.\u0000\u0000\u0000\u0000Results showed that the chitosan concentration needed as a flocculant depends on the microalgae biomass concentration. For the filterability tests, the results proved that flocculation with chitosan enhanced the filterability of the microalgae broth both in dead-end and submerged filtration mode. For the used biomass concentration of around 400 mg/L, the filterability test showed an optimum concentration of chitosan at 7.5 to 10 mg/L, which resulted in a higher filtration flux and lower irreversible fouling in the dead-end filtration and a higher critical flux in the submerged filtration set-up.\u0000\u0000\u0000\u0000This increased filterability allowed higher fluxes to be operated, thus resulting in a more efficient harvesting process.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42808714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs Channel Material AlxGa1-xAs通道材料soi隧道场效应管的性能分析

Micro and Nanosystems Pub Date : 2022-05-11 DOI: 10.2174/1876402914666220511143102

S. Chander, S. K. Sinha

{"title":"Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs Channel Material","authors":"S. Chander, S. K. Sinha","doi":"10.2174/1876402914666220511143102","DOIUrl":"https://doi.org/10.2174/1876402914666220511143102","url":null,"abstract":"\u0000\u0000Tunnel Field-effect transistor (TFETs) has appeared as a promising candidate due to its steep slope (SS<60 mV/dec) and can be used for low power applications.\u0000\u0000\u0000\u0000Authors investigated AlxGa1-xAs as the channel material in Silicon-on-insulator (SOI) TFETs and compared with other existing channel materials, SiGe, Ge, Si, Ge, Strained Si, and GaAs.\u0000\u0000\u0000\u0000For the entire device study, the mole fraction x = 0.2 has been used in AlxGa1-xAs channel material. The direct energy bandgap for Al0.2Ga0.8As has been used because the mole fraction is less than 0.4. The Al0.2Ga0.8As based device has been analyzed in terms of Direct Current (DC) and Alternating Current (AC) characteristics using the Synopsys TCAD tool.\u0000\u0000\u0000\u0000The proposed device offers enhanced switching speed with high on/off ratio of ~1012 and steep subthreshold swing of 30 mv/dec As a channel material,Al0.2Ga0.8As also enhances the miller capacitance of the device, which is one of the essential requirements of the device performance.\u0000\u0000\u0000\u0000In next-generation devices, Al0.2Ga0.8As as channel material and TFET device based on this channel material act as a promising contender for low power applications.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47492508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characterization of AlInN/GaN Based HEMT for Radiofrequency Applications 用于射频应用的AlInN/GaN基HEMT的表征

Micro and Nanosystems Pub Date : 2022-05-10 DOI: 10.2174/1876402914666220510112625

Santashraya Prasad, A. Islam

{"title":"Characterization of AlInN/GaN Based HEMT for Radiofrequency Applications","authors":"Santashraya Prasad, A. Islam","doi":"10.2174/1876402914666220510112625","DOIUrl":"https://doi.org/10.2174/1876402914666220510112625","url":null,"abstract":"\u0000\u0000The Si- and GaAs-based devices are not suitable for very high-speed and high-power applications. Therefore, GaN-based devices have emerged as a potential contender. Further improvement in device characteristics using appropriate mole fractions of Al and InN in the barrier layer of AlInN has become inevitable.\u0000\u0000\u0000\u0000To design AlInN/GaN HEMT and present its salient features.\u0000\u0000\u0000\u0000The design method for the proposed AlInN/GaN HEMT includes selection of materials, optimization of mole fraction in AlInN barrier layer, optimization of gate oxide thickness, optimization of device dimensions, and doping concentration. The fabrication stapes necessary for the AlInN/GaN HEMT are also explained in the paper. Analysis of the structure has been carried out using Silvaco TCAD tool.\u0000\u0000\u0000\u0000All the obtained results have revelaed that the proposed device can operate up to the cut-off frequency of 102 GHz and a Maximum oscillation frequency of 230 GHz which are suitable for the radiofrequency applications. The minimum noise figure and Maximum transducer power gain (~18 dB) achieved by the proposed device is quite acceptable.\u0000\u0000\u0000\u0000The use of AlN spacer layer has improved the AlInN film quality and mitigates strain at the heterointerface. Moreover, it reduces the coulomb attraction between ions in supply layer and electrons in channel layer thereby improving carrier mobility. Usage of a SiO2 layer between the gate and AlInN barrier layer has decreased the gate leakage current. This has reduced subthreshold slope and increased ON/OFF current ratio (~1010). The proposed Si3N4 passivated HEMT offers a breakdown voltage of ~1395 V.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45692508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Applications and Future Outlooks of Hollow Nanomaterials for Wastewater Treatment. 中空纳米材料在污水处理中的应用及展望。

Micro and Nanosystems Pub Date : 2022-05-09 DOI: 10.2174/1876402914666220509105355

Nurul Natasha Mohammad Jafri, J. Jaafar, N. Mohamad Nor, N. Alias, F. Aziz, W. N. Wan Salleh, N. Yusof, M. H. Dzarfan Othman, Mukhlis A. Rahman, A. Ismail, R. A. Rahman

引用次数: 0

Multi-Color states of High contrast Nano Prussian Yellow electro chromic film 高对比度纳米普鲁士黄电致变色膜的多色态

Micro and Nanosystems Pub Date : 2022-05-04 DOI: 10.2174/1876402914666220504143652

Abeer Baioun, H. Kellawi

{"title":"Multi-Color states of High contrast Nano Prussian Yellow electro chromic film","authors":"Abeer Baioun, H. Kellawi","doi":"10.2174/1876402914666220504143652","DOIUrl":"https://doi.org/10.2174/1876402914666220504143652","url":null,"abstract":"\u0000\u0000Construction of electro chromic device via Prussian yellow Nano film on glass electrode.\u0000\u0000\u0000\u0000Energy conservation in one of the most primary research topics nowadays. Electro chromic device with low power consumption and short stable switching periods, are well suited to energy efficient applications, e.g. smart windows, car mirrors, displays, and electronic papers.\u0000\u0000\u0000\u0000Preparation of electro chromic nano Prussian yellow film on ITO glass by a simple chemical facile method and study of its electro chromic features\u0000\u0000\u0000\u0000Prussian yellow film (iron (III) hexacyanoferrate (III)), was prepared by immersing substrate in a solution of ferric nitrate and Potassium hexacyanoferrate. Prussian Yellow film was characterized by ultraviolet-visible (Uv-vis) spectroscopy, cyclic voltammetry and electrochemical impedance spectroscopy. Prussian yellow film, shows an intense yellow color when it is in pristine state.\u0000\u0000\u0000\u0000Resultant Prussian yellow film underwent reversible redox reactions accompanied with color changes from Prussian yellow to Prussian green to further Prussian blue then to Prussian white. Transmittance of Prussian yellow film varies from 21% for colored state at 450nm to 81 % (for fully bleached) at 0.9V. Contrast ratio and ratio of optical density to charge density were examined. The coloration efficiency was be calculated to be 299.6 cm2C-1.\u0000\u0000\u0000\u0000Prussian yellow can be very simply prepared and used as an efficient fast switching electro chromic device with high color contrast.\u0000","PeriodicalId":18543,"journal":{"name":"Micro and Nanosystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42937876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0