March 16最新文献

{"title":"X-Ray Interferometric Investigations of Structural Distortions in Semiconductor Crystals Caused by Constant Electric and Magnetic Fields","authors":"E. Arshakyan, A. Aboyan, P. A. Bezirganyan","doi":"10.1002/PSSA.2211060106","DOIUrl":"https://doi.org/10.1002/PSSA.2211060106","url":null,"abstract":"The effect of constant electric and magnetic fields on the silicon semiconductor crystals is investigated experimentally. It is shown that electric and magnetic fields create structural distortions leading to changes in X-Ray interferometric pictures, which depend on the magnitude of the applied field. At certain values of the intensity of electric field and the induction of magnetic field, the Moire pictures disappear.","PeriodicalId":18217,"journal":{"name":"March 16","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78594806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Calculation of Electrostatic Crystal Field Parameters of Rare Earth Hydrated Single Crystals","authors":"D. Neogy, A. Mukherjee, T. Purohit","doi":"10.1002/PSSA.2211060121","DOIUrl":"https://doi.org/10.1002/PSSA.2211060121","url":null,"abstract":"The process of calculation of point charge and dipolar contributions to the crystal field parameters is outlined and the properties of the latter are discussed. This procedure is applied to the case of the two most extensively investigated hydrated rare earth crystals, Pr-ethylsulfate and Yb-ethylsul- fate. The positions of the dipole centres and charge centres are estimated on the basis of the recently determined structure of these two compounds. The point charge contribution to C20 is found to be comparable to that due to the point dipoles, although the former are the next nearest neighbors of therare earth ion. On the other hand the point charge contributions to C40, C60, or C66 are negligible. The computed total crystal field parameters, taking the screening and scaling factors into consideration, are found to be in reasonable agreement with those derived from experimental data except for C20. \u0000 \u0000 \u0000 \u0000Die Berechnungsmethode der Punktladungs- und die Dipolbeitrage zu den Kristallfeldparametern wird dargestellt und die Eigenschaften der Parameter werden diskutiert. Dieses Verfahren wird auf den Fall der beiden am haufigsten untersuchten Seltenerdkristalle, Pr-Ethylsulfat und Yb Ethylsulfat. Die Lagen der Dipolzentren und Ladungszentren werden auf der Grundlage der kiirz lich bestimmten Struktur dieser beiden Verbindungen berechnet. Es wird gefunden, da13 der Beitrag der Punktladungen zu C20 mit dem von den Punktdipolen herriihrenden vergleichbar ist, obwohl die ersteren die iibernachsten Nachbarn der Seltenerdionen sind. Andererseits sind die Punktladungsbeitrage zu C40, C60 oder C65 vernachlassigbar. Die berechneten Gesamt-Kristallfeldparameter, unter Beriicksichtigung von Abschirm- und Skalierungsfaktoren, sind bis auf C20 in verniinftiger nbereinstimmung mit denen aus experimentellen Werten.","PeriodicalId":18217,"journal":{"name":"March 16","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80299089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Conduction in Germanium Dioxide Thin Films","authors":"N. Sasi, C. Balasubramanian, S. Narayandass","doi":"10.1002/PSSA.2211060145","DOIUrl":"https://doi.org/10.1002/PSSA.2211060145","url":null,"abstract":"","PeriodicalId":18217,"journal":{"name":"March 16","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84526796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Argon Ion Effect on Solid Phase Reaction in Copper-Tin, Copper-Antimony Films","authors":"É. M. Shpilevskiĭ, D. A. Gorbachevskh","doi":"10.1002/PSSA.2211060141","DOIUrl":"https://doi.org/10.1002/PSSA.2211060141","url":null,"abstract":"","PeriodicalId":18217,"journal":{"name":"March 16","volume":"67 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88107934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature Dependence of the Effective Stress for KC1 Single Crystals","authors":"T. Ohgaku, N. Takeuchi","doi":"10.1002/PSSA.2211060140","DOIUrl":"https://doi.org/10.1002/PSSA.2211060140","url":null,"abstract":"","PeriodicalId":18217,"journal":{"name":"March 16","volume":"69 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86407092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Natural Surface Films on GeS","authors":"F. Lukes̆","doi":"10.1002/PSSA.2211060142","DOIUrl":"https://doi.org/10.1002/PSSA.2211060142","url":null,"abstract":"","PeriodicalId":18217,"journal":{"name":"March 16","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74892886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anomaly in the Magnetic Properties of the YCo4B Compound","authors":"T. T. Dung, N. P. Thuy, N. Hong, T. D. Hien","doi":"10.1002/PSSA.2211060124","DOIUrl":"https://doi.org/10.1002/PSSA.2211060124","url":null,"abstract":"Spin reorientation observed in the YCo4B compound at 145 K in which the magnetic moment rotates from the c-axis to the basal plane on decreasing temperature is reported. A preliminary crystal field calculation reveals that the negative anisotropy of 6i site in YCo4B is large and responsible for the basal plane anisotropy of the compound at low temperature. The competition between this negative contribution to anisotropy and the positive one from the Co ion on the 2c site may be the reason of the observed spin reorientation. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":18217,"journal":{"name":"March 16","volume":"60 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74031979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The Electronic and Optical Properties of Germanium Tellurite Glasses Containing Various Transition Metal Oxides","authors":"M. N. Khan, M. Hassan, C. Hogarth","doi":"10.1002/PSSA.2211060123","DOIUrl":"https://doi.org/10.1002/PSSA.2211060123","url":null,"abstract":"Various transition metal oxides, such as TiO2, V2O5, NiO, CuO, and ZnO are added to germanium-tellurite glass and measurements are reported of the electrical conductivity, density, optical absorption, infra-red absorption spectra, and electron spin resonance. It is found that the d.c. conductivity of glasses containing the same amount of V2O5 is higher than that of germanium tellurite glasses containing a similar amount of other transition metal oxides, and is due to hopping between localized states. The optical absorption measurements show that the fundamental absorption edge is a function of glass composition and the optical absorption is due to forbidden indirect transitions. From the infra-red absorption spectra, it is found that the addition of transition metal oxides does not introduce any new absorption band in the infra-red spectrum of germanium tellurite glasses. A small shift of existing absorptions toward higher wave number is observed. The ESR measurements revealed that some transition metal ions are diamagnetic while others are paramagnetic in the glass network. \u0000 \u0000 \u0000 \u0000Quelques oxydes des metaux transitionnels comme TiO2, V2O5, NiO, CuO et ZnO etaient introduits dans les verres du tellurite de germanium, et les resultats des mesures de la conductibilite elec-trique, du densite, du spectre d'absorption optique et d'absorption infra-rouge, et de la resonance electronique paramagnetique (EPR) sont presentes. On etablit que la conductibilite directe des verres avec V2O5 est plus grande que dans les verres du tellurite de germanium avec la měne contenu d'autre oxyde du metal transitionnel, et est une consequence d'un processus electronique de “hopping” entre les etats electroniques localises. Les resultats pour l'absorption optique montrent que la limite fundamentale d'absorption est une fonction de la composition du verre et l'absorption optique est associee avec les transitions non-directes. L'absorption spectrale infra-rouge indiquent que l'addition des oxydes metalliques transitionnels n'introduit pas les bandes d'absorption nouvel-les dans le verre du tellurite de germanium. Une petite deplacement des absorptions bien connues ver les energies plus petites est observee. Les mesures de EPR indiquent que quelques metaux transitionnels sont diamagnetiques et les autres sont paramagnetiques dans le verre.","PeriodicalId":18217,"journal":{"name":"March 16","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90972563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low Pressure Chemical Vapour Deposition Amorphous Silicon Behaviour under Annealing","authors":"G. Pastor, P. Tejedor, I. Jiménez, E. Domínguez, M. Torres, J. García-Ramos","doi":"10.1002/PSSA.2211060102","DOIUrl":"https://doi.org/10.1002/PSSA.2211060102","url":null,"abstract":"Four types of amorphous silicon materials are grown in a low pressure chemical vapour deposition (LPCVD) system and their differences in colour, adherence, smoothness, as well as crystallinity of the derived materials are investigated as a function of annealing temperature. Experimental results indicate that amorphous silicon growth can actually occur, either through an heterogeneous mechanism on the substrate surface or through homogeneous nucleation in the vapour phase. In general, surface grown amorphous silicon renders high quality polysilicon after annealing. This is not the case for amorphous silicon nucleated in the vapour phase, which produces poor quality polysilicon under similar temperature conditions. \u0000 \u0000 \u0000 \u0000Vier Arten von amorphem Siliziummaterial werden in einem Niederdruck-CVD (LPCVD)-System hergestellt und ihre Unterschiede sowohl in Farbe, Haftfestigkeit, Glattheit als auch hinsichtlich ihrer Kristallinizitat als Funktion der Temperungstemperatur untersucht. Die experimentellen Ergebnisse zeigen, das Wachstum von amorphem Silizium tatsachlich auftreten kann, entweder uber einen heterogenen Mechanismus auf der Substratoberflache oder uber eine homogene Keimbildung in der Dampfphase. Im allgemeinen ergibt oberflachengewachsenes amorphes Silizium nach Temperung Hochqualitatspolysilizium. Dies ist nicht der Fall fur amorphes Silizium mit Keimbildung in der Dampfphase, das Polysilizium mit geringer Qualitat unter ahnlichen Temperaturbedingungen liefert.","PeriodicalId":18217,"journal":{"name":"March 16","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86012912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Peculiarities of Radiative Recombination in Gallium Arsenide Doped with Shallow Donors and Acceptors","authors":"D. S. Domanevskii, S. V. Zhokhovets, M. V. Pkokopenya","doi":"10.1002/PSSA.2211060130","DOIUrl":"https://doi.org/10.1002/PSSA.2211060130","url":null,"abstract":"The photoluminescence of epitaxial n-GaAs: (Te + Ge) with an intermediate degree of compensation is studied as a function of excitation level, the parameters of a “moving” band are determined and compared with the theory. Discrepancies found between theory and experiment can be understood if, when considering thermalization processes of non-equilibrium holes, their transitions between tail states, passing by the valence band, are taken into account. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":18217,"journal":{"name":"March 16","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1988-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73687973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}